滤波器作为微波接收机、发射机和测试设备中的一个重要组成部分,担任着信号选择、分离和组合的重要任务,在通信和雷达中具有广泛的应用.研究了导体表面粗糙度对带通滤波器工作频率、插入损耗和带宽的影响.为了保证滤波器的质量和成品率,需要对基板导体层的表面粗糙度进行控制.

The simulation model of the phase-shifting module is established, and the influence of coating sealant, bonding gold wires, bonding gold ribbons and adjusting phase-shifting path on the module phase is analyzed. Coating sealant on the surface of the transmission line and adjusting the parameters of the bonding gold wires or ribbons can change the module phase slightly, which are suitable for fine adjustment of the phase consistency for the microwave modules. Changing the connected path of the phase-shifting network can change the module phase greatly, which is suitable for extensive adjustment of the phase consistency of the microwave modules.

A microstrip ring resonator is designed to measure the complex permittivity of the glass substrate. The sample is prepared by the traditional thin film process, and the insertion loss cure of the ring resonator is tested. The simulation model of the ring resonator is created. The simulation curve of the insertion loss is compared with the test curve. Then the effects of complex permittivity on the frequency offset and amplitude fluctuation of resonant peak are analyzed. The relation curves between dielectric constant and resonant frequency, loss tangent and quality factor (Q) of the glass substrate are obtained, and the corresponding empirical formulae are extracted, which can be used for rapid calculation of the complex permittivity of a substrate.

以移相模块为例,仿真分析了电路基板的材料参数和微组装工艺参数对微波组件幅相特性的影响.基板的介电常数变化对组件相位的影响极大,对损耗的影响可忽略;介质损耗角正切和金属表面粗糙度变化对传输损耗的影响较大,对组件相位影响可忽略;级联金丝弧高和跨距变化对信号幅度和相位的影响较大.为保障微波组件的幅相一致性,应提高基板材料参数和微组装工艺参数的一致性;为提高组件性能,级联金丝的弧高应小于0.20mm,金丝跨距应小于0.30mm.

分析红外热成像技术应用于微波组件故障检测的能力基础.通过波束分配组件和T/R组件进行试验验证,红外图像中组件局部电路的清晰结构、工作芯片和故障芯片的明暗对比、单芯片不同区域的亮暗对比证实红外热成像技术适用于微波组件的故障检测.另外红外热成像技术应用于微波组件大批量、高效率故障检测还需具备大面积成像能力、小区域显微成像能力以及图像识别和对比能力.

The micro-rectangular coaxial line was fabricated by the printed circuit board technology, and the micro-rectangular coaxial structure-based power divider was achieved. The size of the power divider is small, and the width of the isolation wall between the neighboring lines of power divider is only 240 um. The traditional micro-system integration technology (bonding, soldering, thermoacoustic welding and so on) was used to install the power divider to the test fixture. In the frequency range of 14.0 GHz $\sim$ 17.0 GHz, the measured transmission loss $\vert S21 \vert$ obtained from the power divider with test fixture is less than 3.9 dB, the isolation $\vert S23 \vert$ is greater than 22.0 dB, and the port voltage standing wave ratio (VSWR) is less than 1.7, all of which meet the requirements of the design standard.

介绍了三种微波组件通道间相位一致性的调节方法:改变级联金丝间距、在传输线表面涂覆真空密封胶和调节调相网络.采用改变级联金丝间距和在传输线表面涂覆真空密封胶的方法,可小幅改变通道相位.采用调节调相网络的方法可大幅改变通道相位.这三种调试方法为微波组件相位一致性的调节提供指导.

对纳米铜在电子封装领域的应用优势进行了简要分析,从材料制备、烧结技术和材料性能三个方面回顾了纳米铜性能调控技术的最新研究成果,评述了还原性稳定剂、表面配位诱导深度晶面重构以及核壳结构等纳米铜抗氧化技术的工程应用价值,分析了低温无压热烧结以及大气环境下的光子烧结的发展趋势.从应用模式和性能的视角介绍了纳米铜在高可靠全铜互连、下一代功率芯片键合以及新兴的柔性混合电子(FHE)等方面的应用进展、面临的挑战及尚待开展的研究.最后展望了纳米铜在电子封装领域规模化应用的前景并指出重点研究方向.

Anisotropic conductive film (ACF) is inserted within a transmission line between a ball grid array (BGA) packaging device and the attaching printed circuit board (PCB) to realize the temporary high density electrical interconnection. The ACF consists of metal wires and resin. Interconnect system constructed by Device-ACF-PCB was modeled in HFSS software. Several factors including film placing position, film thickness, diameter of conductive wire, wire inclination angle and dielectric constant of resin were evaluated by discussing their influences on electrical performance of interconnection with frequency up to 40 GHz.

随着BGA (Ball Grid Array)封装的射频SiP (Systems in Package)产品的逐渐应用,对SiP产品及其射频基板的测试提出了很高的要求.介绍了一种射频基板BGA端口传输性能检测方法,通过设计射频BGA端口的检测装置,实现射频基板上射频BGA端口传输线的性能检测及筛选.该检测方法能够实现DC 40 GHz频率范围内的射频性能检测,且DC 40 GHz频率范围内单个装置引入插损小于1dB,驻波优于2.基于此方法的检测装置可实现目前多数频段的基板射频BGA端口性能检测.

采用压接式探针连接器对BGA封装微模块进行高效率、无损伤测试会发生测试曲线畸变失真现象.仿真分析测试模具引入导致“微模块-测试模具-测试板”组成的测试系统性能变差的原因.详细分析了介电常数、限位间距、限位间隙等参数对系统射频传输性能的影响,发现介电常数和限位间隙的变化对系统性能的影响较大,限位间距变化时系统的性能几乎不变.

Power divider is an important circuit component in radio frequency micro-eletromechanical systems (RF MEMS). Current power divider designs are mainly based on conventional transmission structures (e.g., microstrip, coplanar waveguide, etc.). These structures are not fit for high-density millimeter-wave integrated circuits due to the large signal coupling and radiation loss between lines. In this paper, we propose a novel millimeter-wave broadband power divider based on micro-rectangular coaxial structures. In our proposed method, the micro-rectangular coaxial structure and ground-signal-ground (GSG) form are utilized as the basic transmission and the switching structure of power divider respectively. Moreover, a novel millimeter-wave broadband power divider is designed with an operating frequency range of 16~38GHz by integrating GSG and micro-rectangular coaxial lines. The simulation results show that the designed power divider has good performance in return loss (S11<; -20dB), isolation (S32<; -20dB), and insertion loss (better than 0.35dB). Also, the measurement results are in agreement with the simulation results, which demonstrate the effectiveness of our proposed schema.

微电铸技术是一种金属微结构制备技术.与普通的机械加工相比,微电铸的加工精度更高,能够制备μm级精细结构.然而,在进行大面积铜电铸时,阴极区域不同位置电流密度分布不均匀,会产生明显的电铸厚度差异.借助有限元分析技术,提出一种提升金属铜微电铸均匀性的方法,通过在目标图形外围添加电流收集环来改变阴极电流分配密度,从而提升电铸均匀性.

利用一种内嵌金属丝的各向异性弹性导电膜片对微波模块和测试板进行临时性垂直互连,实现微波模块的高效率、无损伤测试.利用HFSS17.0对膜片结构进行建模仿真,分析膜片的结构参数变化(金属丝间距、金属丝截面边长、金属丝倾斜角度和膜片厚度等)对互连结构射频传输性能的影响,得到了应用环境下膜片结构参数的最优值.

Micro vertical interconnect technology is one of the core technologies in board-level 3D integration system. This paper proposes a novel interconnect scheme for broadband high frequency between substrates. In this interconnect system, a miniature coaxial cable is inserted into a trench of a coplanar transmission structure. The trench makes electrical contact between the coaxial cable and the coplanar transmission line which fabricated on a PCB substrate. The size and electrical properties of the interconnect system are designed by 3D electromagnetic simulation and optimization. For comparing and analyzing the influence of corresponding fabrications, various practical samples are processed and tested. The simulation and test results verified that it has good electrical performance. The proposed approach has the advantages of small size, easy assembly and maintenance, which has a wide of application prospects in system integration and miniaturization design of RF/microwave circuits.

High quality InAs0.94Sb0.06 films were grown on InAs substrates by the liquid phase epitaxy technique. The structural characteristics and cross-section morphology of InAs0.94Sb0.06 samples were investigated by high-resolution x-ray diffraction measurements and scanning electronic microscopy measurements, respectively. The refractive index and extinction coefficient spectra of InAs0.94Sb0.06 film near the energy band gap were obtained by fitting room temperature infrared spectroscopic ellipsometry with the model of dielectric function in the range of 3 000 to 6 000 nm. The energy band gap of InAs0.94Sb0.06 was 0. 308 eV, which was determined by refractive enhancement.

We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid phase epitaxy technique. Statistical size distributions of the uncapped QDs were investigated experimentally by field-emission scanning electron microscopy (SEM) and atomic force microscopy (AFM), and theoretically by an eight-band k · p calculation, which demonstrated a dissolution effect. Furthermore, the low-temperature luminescence spectra of type-II GaSb/GaAs QDs with a thick capping layer exhibit well-resolved emission bands and LO-phonon-assisted transitions in the GaSb wetting layer. However, the luminescence lines quench at temperatures above 250 K, which is attributed to the weak quantum confinement of electrons participating in indirect exciton recombination. It was demonstrated that the room temperature stability of the excitons in type-II GaSb/GaAs QDs could be achieved by growing thin a capping layer, which provides strong quantum confinement in the conduction band and enhances the electron–hole Coulomb interaction, stabilizing the excitons.

The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 degrees C. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.

High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.