Представлены инженерные методики испытаний электронной компонентной базы (ЭКБ), выполненной по КМОП- и биполярной (или БиКМОП) технологиям, с учетом длительного воздействия низкоинтенсивного (НИ) облучения космического пространства. Методики позволяют сократить выборку образцов ЭКБ, необходимую для испытаний, а также трудозатраты на проведение испытаний. Рассмотрены области применения и общие алгоритмы методики.

Представлены методические особенности при проведении испытаний сложно-функциональных программно-управляемых СБИС на стойкость к воздействию специальных факторов. Приведены экспериментальные данные, иллюстрирующие указанные методические особенности, влияющие на достоверность получаемых оценок стойкости.

Experimental studies on the influence of the electric mode (active and passive) on dose of the radiation resistance of microcircuits of different structural and technological types and functional classes are carried out. The analysis of the results presented makes it possible to evaluate the effectiveness of a “cold” backup and the possibility of simulating the effects of low irradiation intensity in the passive mode.

The methods of functional-logic simulation of radiation-induced failures of electronic systems based on the Brauer fuzzy state machine model are presented. Recommendations for methods of radiationinduced failure prediction in the electronic component base are given. Theoretical and experimental results for the radiation fault tolerance of 1617 large-scale integrated circuits based on complementary metal–oxide–semiconductor structures are given as an example.

The technique of functional-logical simulation of System-on-Chip (SoC) total dose radiation failures is presented based on fuzzy logic sets theory. An analysis of the capabilities of this approach for IP-blocks radiation behavior is carried out along with the analysis of operating modes under irradiation influence on IP-blocks radiation behavior. The following elements of this technique application for simulation of dose radiation failures of various types of IP-units are studied: logical elements, memory units and cells, processors. Examples of criterial membership functions and operability functions construction are given for these IP-units and for various critical parameters characterizing their failures. It is shown that when modeling total dose failures it is necessary to take into account the influence of the functional mode on the model parameters. The technique proposed allows improving the reliability of the SoC radiation hardness estimation, also for the purpose of solving the problems of information security of electronic devices.

This paper analyzes the specifics of digital signal processors’ (DSPs) radiation-induced failures. The general methodology, as well as the hardware and software, for the functional testing (FT) of DSPs in radiation experiments is developed and implemented. The experimental results are presented to demonstrate the effectiveness of the solutions proposed.

The technique for numerical simulation of digital VLSI total dose failures is presented, based on fuzzy logic sets theory. It assumes transfer from boolean logic model of a VLSI with values {0,1} to fuzzy model with continuous interval [0,1], and from boolean logic functions to continuous minimax functions. The technique is realized as a calculation system and allows effective estimating of digital VLSI radiation behavior without experimental investigation.

The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.

The article discusses the use of a NI PXI-7841R module to control the operation of VLSI microprocessors in terms of radiation experiment. The article also discusses the use of the NI PXIe-7962R module in conjunction with the module NI PXI-7841R to expand measurement system possibilities.

ADC/DAC radiation failures are mainly due to radiation-induced degradation of precision parameters of the transfer characteristic such as gain, zero offset, full-scale voltage, integral and differential non-linearity, conversion error. ADC/DAC radiation failure specifics is that even a slight deviation of electrical parameter of internal elements (comparator threshold, internal reference voltage, switch leakage, operational amplifier gain, etc.) often leads to significant degradation of ADC/DAC accuracy. ADC/DAC radiation test procedure and facilities are developed and test results are introduced.

A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware.

Methods are proposed to estimate the relationship between probabilistic and order models for simulating functional failures of the large-scale integrated circuits (LSICs) based on Brauer’s fuzzy digital automaton and on a probabilistic automaton for reliability evaluation. In the first case, the behavior of the LSIC is determined by varying static and dynamic parameters; in the second case, by the statistical straggling of threshold failure levels.

The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics. A huge TID level dispersion for different ICs in SOM is demonstrated. Basic Al sphere approach for TID spacecraft requirements calculations is shown to provide overestimated conservative results.

Total ionizing dose (TID) radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional “simple” ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.

A review of microwave electronics total ionizing dose (TID) test results is presented. It is shown that microwave electronics is usually characterized by high TID hardness as compared to electronic components of other functional types. However, there are microwave components with relatively low hardness, these parts contain CMOS elements.