Autonomous, bio-integrated electronic systems, such as smart prosthetics and functional electronic skins, require materials combining energy harvesting with perception. Although Indium Antimonide is well established in high-speed electronics owing to its high electron mobility, yet its large intrinsic thermal conductivity has limited its use in thermoelectric energy harvesting. Here, we introduce a peritectic engineering strategy to reduce the thermal bottleneck. Thermodynamic control of the peritectic reaction generates hierarchical InBi@(Bi, Sb) core-shell nanostructures that reduce the room-temperature lattice thermal conductivity from 13.1 to 6.84 W m-1 K-1. This microstructural manipulation raise the power factor by 98% at 473 K, yielding a marked decoupling of electron and phonon transport. A compact, self-powered InSb-InBi/Cu3InSnSe5 module drives commercial electronics under moderate thermal gradients. The module also functions as a zero-power thermo-tactile interface for prosthetic limbs, enabling covert thermal messaging via Morse code decoded by a transfer learning algorithm a transfer learning algorithm. This platform enables the integration of thermoelectric materials into intelligent human-machine interfaces, advancing the development of self-powered sensory systems.

Manganese telluride (MnTe) has been proposed to be a favorable candidate for middle range temperature thermoelectric (TE) material; whereas, the low carrier concentration and higher thermal conductivity have restricted its applications. Herein, a crucial role of Cu-ion in synthesized MnTe with the addition of Cu2Se through mechanical alloying and hot press sintering facilitate the improvement of carrier density and thus enhanced power factor of MnTe with the incorporation of 8 at.% Cu2Se due to novel liquid-like behavior of Cu-ion in Cu2Se at elevated temperatures. Moreover, the excessive hole density of Cu2Se and the undissolved nano-scale Cu2Se results in a remarkable scattering of phonons and thus suppressed lattice thermal conductivity at higher temperatures. With this approach, the overall thermoelectric performance of MnTe + x at.% Cu2Se was investigated and we found enhancement in the thermoelectric performance with the inclusion of Cu2Se with a maximum ZT of ∼0.72 in 8 at.% Cu2Se added MnTe sample at 873 K.

This paper presents a solar cell with the structure based on FTO/SnO2/MASnI(3)/MoO3/Au configuration. The device utilizes MASnI(3) as the optical absorber layer, with SnO2 functioning as the electron transport layer (ETL) and MoO3 as the hole transport layer (HTL). FTO and Au serve as the front and back electrodes, respectively. The device achieved a power conversion efficiency (PCE) of 23.71 % through structural and material optimization, with a V-oc of 0.9259 V, J(sc) of 34.62 mA/cm(2), and a fill factor (FF) of 73.97 %. Performance enhancements were attributed to the use of appropriate HTL and absorber layer thicknesses (0.05 mu m and 0.9 mu m), increased carrier diffusion lengths, and the efficient mitigation of recombination losses. The research determined that 317 K is the optimal working temperature, enhancing efficiency while preventing thermal instability. Moreover, shunt resistance and interface engineering were identified as crucial for sustaining high performance. The findings underscore the potential of MoO3-based HTLs and focused optimisation tactics in creating efficient, stable, and ecologically sustainable lead-free perovskite solar cells.

ABSTRACT The pursuit of sustainable and multifunctional energy technologies has spurred the development of integrated device architectures that can simultaneously harvest, convert, and store multiple forms of energy. Metal halide perovskite solar cells (PSCs), owing to their high power conversion efficiencies, low‐cost fabrication, tunable bandgaps, and mechanical flexibility, have emerged as transformative candidates for multifunctional energy platforms. Recent advances highlight the potential of PSC‐based hybrid systems across four major directions: (i) perovskite–thermoelectric (PSC‐TE) devices that recover sub‐bandgap and thermalized photon losses to surpass the Shockley–Queisser limit; (ii) integrated photovoltaic–electrochemical (PV‐EC) systems that directly drive water splitting and CO 2 reduction for solar fuel generation; (iii) PSC‐based self‐charging energy storage devices, including photocapacitors and photobatteries, enabling autonomous power supplies; and (iv) building‐integrated PSC platforms offering transparency, flexibility, and multifunctionality for urban energy infrastructures. Particular attention is devoted to device configurations, interfacial engineering strategies, thermal management, and performance optimization. Finally, key challenges such as long‐term operational stability, scalable fabrication, and interfacial/thermal losses are discussed, alongside future opportunities to enable PSC‐based integrated devices to evolve from proof‐of‐concept demonstrations to practical solutions for next‐generation sustainable energy systems.

Perovskite solar cells (PSCs) have attracted considerable attention due to their potential for high-efficiency conversion and cost-effective fabrication. Although the fabrication of perovskite films in ambient air offers environmental and cost advantages, the presence of water vapor and oxygen may induce instability in these films, thereby affecting device performance. This review aims to comprehensively explore recent advancements in the fabrication of PSCs in ambient air, while investigating various factors contributing to perovskite degradation. Addressing these challenges, diverse fabrication strategies are outlined, encompassing compositional, additive, solvent, and interface engineering to enhance the performance and stability of PSCs fabricated under ambient air. To facilitate the commercialization of PSCs, this paper summarizes several widely employed methods for the large-scale manufacturing of PSCs. Through this review, we aim to offer some invaluable insights and guidance for the commercialization trajectory of PSCs, as well as the pros and cons to their widespread applications in the field of renewable energy.

Perovskite solar cells are advancing quickly, which suggests that this photovoltaic technology has the potential to replace current silicon-based solar panels. This paper explores the use of manual screen printing to fabricate semi-transparent, scalable perovskite solar modules without the requirement for numerous laser-scribing steps. A carbon-based, hole-transport-layer-free perovskite solar module with a power conversion efficiency of 11.83 % is manufactured, having an active area of 900 cm2. Accelerated testing is done in settings with elevated humidity, high sun irradiation, and harsh temperatures to determine whether these modules are ready for the market. The modules show mean deterioration rates of 0.04 % and 0.02 % when tested at average spring and summer temperatures of 35 degrees C and 44 degrees C, respectively. The degradation rate in a dry heat test at 70 degrees C is found to be 0.11 %. Under 70 % relative humidity, full solar light, and water immersion, degradation rates of 0.05 %, 0.11 %, and 0.16 % are noted, respectively. Because of their high efficiency and stability, these semi-transparent perovskite solar modules can be used in building-integrated photovoltaic applications.

Exploring and developing novel, low-cost, and environmentally friendly photovoltaic materials is a vital trend in the evolution of solar cell technology. The distinctive properties of alkali bismuth ternary sulfides have spurred increased research and application in optoelectronic devices. In this study, a novel method is reported for preparing NaBiS2 film by sequential thermal evaporation of Na2S and Bi2S3 layers followed by heating post-treatment for the first time, as well as the preparation of solar cells with NaBiS2 as the light-absorbing layer. Based on X-ray diffraction and Raman analysis, the prepared NaBiS2 film is confirmed to be a single-phase material, without the presence of any secondary phases. Additionally, the photoelectric characteristics of NaBiS2 are investigated and incorporated this material into solar cell devices. By optimizing the device architecture, the solar cell utilizing NaBiS2 as the light-absorbing layer achieved a photoelectric conversion efficiency of 2.91%, which is the highest efficiency reported for NaBiS2 solar cells up to now. The research has provided a valuable perspective and path for the development of novel photovoltaic materials in the solar cell field.

Inverted (p-i-n) perovskite solar cells (PSC) have demonstrated significant promise compared to the conventional n-i-p architecture, owing to their improved operational stability, reduced hysteresis, and low-temperature fabrication process. These advantages make inverted devices particularly attractive for tandem and flexible applications. Self-assembled molecules (SAM) have been used lately in hole transport layer (HTL) of inverted PSC while the shortcomings like bad coverage and homogeneity, misalignment and weaker compactness with the substrate have appealed for its hybrid self-assembled molecular (HSAM) approaches. The compactness, coverage, and homogeneity of SAM can be further enhanced through HSAM, which leads to higher crystallinity, better band alignment, improved nucleation, and reduced non-radiative recombination losses in inverted PSC. Herein, the effect of HSAM is summarized at the HTL of inverted perovskite through their structural characteristics, interface passivation effects, crystallization modulation effect, dipole effect, redox behavior effects and the prevention of SAM aggregation in perovskite films for providing insights to broaden the impact of HSAM in inverted PSC for future research and development.

Flexible thermoelectric (TE) materials and their devices have gained increasing attention due to the flexibility and lightness of flexible TE technology for low-temperature waste heat collection. In recent decades, various efforts have been devoted to the impressive efficiency of flexible TE technology including the synthesis, design, and integration of flexible TE generators. In this regard, the urgent need for eco-friendly, stable, and durable power sources motivates the booming market for integrated electronics. This review comprehensively summarizes the state-of-the-art development of flexible TE materials, device types, fabrication techniques, and the fundamentals behind their applications. In addition, the employed methods for moderate physical properties including theoretical analysis, experimental prospects, and importantly the challenges of flexible TEs are introduced. Moreover, we summarized the applications of flexible TEs in textiles, wearable electronics, waste heat utilization, and their applications in sensors, the Internet of Things, health monitoring, etc. We believe that this review addresses the current research challenges and their future directions to the researchers for choosing potential materials to explore flexible TE technology.

Being a major obstacle, Ag2Te has always been restricted in p-type AgSbTe2-based materials to improve their thermoelectric performance. This work reveals a stabilized AgSbTe2 through Sn/Ge alloying as synthesized by melting, annealing, and hot press. Interestingly, addition of Sn/Ge in AgSbTe2 extended the solubility limit up to ∼30% and hence suppressed Ag2Te in Ag(1-x)SnxSb(1-y)GeyTe2 compounds and led to enhanced electrical transport. Moreover, electrical and thermal transport properties of AgSbTe2 have been greatly affected by the phase transition of Ag2Te near 425 K. However, high-entropy Ag0.85Sn0.15Sb0.85Ge0.15Te2 compound results in a stabilized rock-salt structure and presents a high power factor of ∼10.8 μW cm-1 K-2 at 757 K. Besides, density functional theory reveals that available multivalence bands in Sn/Ge-doped AgSbTe2 lead to reduction in energy offsets. Meanwhile, a variety of defects appear in the Ag0.85Sn0.15Sb0.85Ge0.15Te2 sample due to entropy change, and thus lattice thermal conductivity decreases. Ultimately, a high figure of merit of ∼1.5 is attained at 757 K. This work demonstrates a roadmap for other group IV-VI materials so that the high-entropy approach may inhibit the impurity phases with extended solubility limit and result in high thermoelectric performance.

Abstract Lead‐free polycrystalline manganese telluride holds great potential in the development of waste heat recovery due to its fascinating physical properties. However, the poor thermoelectric (TE) performance in the p‐type MnTe alloys always results from their inferior carrier concentration, leading to low power factor and high thermal conductivity which restrict the overall thermoelectric performance. In this work, the problem is solved by decoupling its electrical and thermal transports through the hole donor Ge‐deficiency in MnTe + x mol.% GeTe (0 ≤ x ≤ 4) compounds. Intrinsically, extra GeTe in MnTe + x mol.% GeTe compound offers free charge carriers due to a narrow bandgap comparatively, realizing not only a full assessment of stimulated electrical performance but also an enhanced power factor. Moreover, benefiting from the nano‐precipitates and tweed microstructures, the lattice thermal conductivity effectively reduces due to the intensive phonon scattering accordingly. Ultimately, a maximum ZT of ≈1.2 at 873 K in the 3 mol.% GeTe doped MnTe sample is realized.

The interface energy level alignment modulation and charge carrier transportation play an important role in the device performance of perovskite solar cells (PSCs). Herein, tailored hydrophobic metal-organic frameworks (MOFs) are employed as interfacial layers between perovskite absorbers and hole transport layers (HTLs). The tailored MOFs feature abundant carboxylic acid groups capable of bonding with Pb2+ and organic cations, which can effectively passivate interface defects and suppress non-radiative recombination. Meanwhile, the MOF interfacial layers optimized the energy level alignment between the perovskite and the HTL, further facilitating carrier transportation. Specifically, the CsFAMA-based PSCs with a bandgap of 1.63 eV attained power conversion efficiency (PCE) of 23.06% upon modification with MOFs. Additionally, the MOFs-treated FA-based PSCs with a bandgap of 1.55 eV achieved a remarkable PCE of 24.81%, accompanied by an outstanding fill factor of 84.3% and a minimal open-circuit voltage loss of merely 0.386 V. Furthermore, the integration of the MOF interfacial layer substantially improved the moisture stability of the PSCs. The unencapsulated CsFAMA PSCs modified with MOFs retained 91.2% of their initial efficiency after 2500 h of aging under ambient conditions with 40% relative humidity (RH). This work underpins the commercialization of PSCs with diverse bandgaps.

Efficient CsPbBr3 perovskite films and the low-temperature fabrication of electron transport layers (ETLs) are crucial for the commercial viability of CsPbBr3 perovskite solar cells (PSCs). We present a vapor-assisted solution technique that produces high-quality CsPbBr3 perovskite films without annealing. Doping ZnO with trivalent metals such as yttrium (Y), antimony (Sb), and iron (Fe) improves the electrical properties and energy alignment with CsPbBr3. Our experiments show that Sb doping enhances charge extraction and reduces interface carrier recombination to achieve a power conversion efficiency (PCE) of 9.55% in the inorganic CsPbBr3 PSCs. The optimized device maintains over 90% of its original PCE after 90 days under 65% relative humidity and 65 degrees C. Additionally, flexible CsPbBr3 PSCs with an Sb-ZnO ETL achieve a record 6.06% efficiency with remarkable mechanical durability to retain 91.8% of initial PCE after 1000 bending cycles at a 3 mm curvature radius.

As a group of emerging liquid-like thermoelectric materials for waste heat recovery into useful energy, di-chalcogenides Cu-2(S, Se, Te) have been considered as superionic thermoelectric materials. Due to their highly disordered degree of Cu-ion in the crystal lattice, Cu-2(S, Se, Te) compounds can exhibit ultralow thermal conductivity, and in the meantime, their rigid sublattice can decently maintain the electrical performance, making them distinct from other state-of-the-art thermoelectric materials. This review summarizes the well-designed strategies to realize the impressive performance in thermoelectric materials and their modules by linking the adopted approaches such as defect engineering, interfaces, nano-porous inclusions, thin films, dislocations, nano-inclusions, and polycrystalline bulks etc., with the moderate design of the device. Some recent reports are selected to outline the fundamentals, underlined challenges, outlooks, and future development of Cu-2(S, Se, Te) liquid-like thermoelectric materials. We expect that this review covers the needs of future researchers in choosing some potential materials to explore thermoelectricity and other efficient energy conversion technologies.

Thermoelectric technology can directly harvest the waste heat into electricity, which is a promising field of green and sustainable energy. In this aspect, flexible thermoelectrics (FTE) such as wearable fabrics, smart biosensing, and biomedical electronics offer a variety of applications. Since the nanofibers are one of the important constructions of FTE, inorganic thermoelectric fibers are focused on here due to their excellent thermoelectric performance and acceptable flexibility. Additionally, measurement and microstructure characterizations for various thermoelectric fibers (Bi-Sb-Te, Ag2Te, PbTe, SnSe and NaCo2O4) made by different fabrication methods, such as electrospinning, two-step anodization process, solution-phase deposition method, focused ion beam, and self-heated 3ω method, are detailed. This review further illustrates that some techniques, such as thermal drawing method, result in high performance of fiber-based thermoelectric properties, which can emerge in wearable devices and smart electronics in the near future.

Lead-free chalcogenide SnTe has been demonstrated to be an efficient medium temperature thermoelectric (TE) material. However, high intrinsic Sn vacancies as well as high thermal conductivity devalue its performance. Here, β-Zn4Sb3 is incorporated into the SnTe matrix to regulate the thermoelectric performance of SnTe. Sequential in situ reactions take place between the β-Zn4Sb3 additive and SnTe matrix, and an interesting "core-shell" microstructure (Sb@ZnTe) is obtained; the composition of SnTe matrix is also tuned and thus Sn vacancies are compensated effectively. Benefitting from the synergistic effect of the in situ reactions, an ultralow κlat ≈0.48 W m-1 K-1 at 873 K is obtained and the carrier concentrations and electrical properties are also improved successfully. Finally, a maximum ZT ≈1.32, which increases by ≈220% over the pristine SnTe, is achieved in the SnTe-1.5% β-Zn4Sb3 sample at 873 K. This work provides a new strategy to regulate the TE performance of SnTe and also offers a new insight to other related thermoelectric materials.

SnTe is a promising alternative of the moderate-temperature thermoelectric material PbTe owing to its earth-abundant and nontoxic nature. However, its several shortcomings, such as small Seebeck coefficient thus poor power factor and upper lattice thermal conductivity, which have restricted overall thermoelectric performance of SnTe. In this scenario, an effective approach to decouple electrical parameters of electrical conductivity and Seebeck coefficient typified by introducing Vanadium (V) interstitial defects, realizing an ultrahigh power factor and a reduction in lattice thermal conductivity has been presented in SnTe system. Concretely, the V-interstitial defects caused by alloying V with SnTe enable lower formation energy of intrinsic Sn vacancies and holistic weak chemical bonding surrounded by Sn atom, thereby improving carrier density and the overall electrical conductivity. Meanwhile, the high-temperature Seebeck coefficient was significantly enhanced due to the increased valence band convergence and in-situ self-doping effect induced by V-interstitials. Moreover, beneficial from the hierarchical crystal defects and microstructure, the independent lattice thermal conductivity had been greatly reduced to its amorphous limit of similar to 0.4 Wm(-1) K-1. In virtue of these multiple functions of V-interstitials, a record-high power factor of similar to 37.4 mu Wcm(-1) K-2 by single element alloying and an enhanced zT value of similar to 1.3 at 873 K, combined with a calculated engineering output power density similar to 263 Wcm(-2), were achieved in the Sn0.98V0.02Te sample. Conclusively, this work provides an ingenious way to further maximize its electrical performance despite the already-high electrical conductivity of SnTe, impelling the potential application of SnTe for high output power density, and this may also apply to other highly conductive thermoelectric systems.

Pb-free MnTe has recently been discovered to be a promising thermoelectric material because of its low toxicity and eco-friendly nature. Here, we have proposed and demonstrated an effective approach to boost the electrical transport of MnTe compound via reinforcing bond covalency through M/S (alkaline dopants M = Li, Na, and K) co-doping. By means of this strategy, the electrical conductivity was significantly improved owing to the increasing carrier concentration and mobility, which is attributed to the decreasing electronegativity difference vertical bar chi(Te)-chi(M)vertical bar as M going from K to Na to Li. The single Kane band model enables a reliable assessment of their temperature-dependent electrical properties, further suggesting that the bipolar effects at high temperature can be effectively suppressed by reinforcing bond covalency. Moreover, beneficial from alkali doping and sulfur substitution, the lattice thermal conductivities have been sharply reduced to amorphous limit through intensive phonon scattering induced by the multiscale hierarchical architecture such as the nanostructures, coherent grain boundary and high-density dislocations, etc. As a result, a record-high peak zT of similar to 1.3@873 K, corresponding to a calculated engineering output power density similar to 1.46 Wcm(2) and leg efficiency eta similar to 8.4%, has been achieved in the Li/S co-doped (Mn1.04Li0.02Te0.99S0.01) sample. This work provides a referential route to enhance electrical properties via synergistically improving carrier concentration and mobility by reinforcing bond covalency, impelling the potential applications of MnTe-based thermoelectric materials as a robust candidate for waste heat recovery.

In this work, a dual-site electronic doping with Sb and I in SnTe has been carried out, and the impact of codoping on the electrical and thermal transport properties has been studied in detail. Due...