Vanadium dioxide exhibits a metal to insulator transition close to room temperature, making it very interesting in particular for radio frequency (RF) device applications. Here, we compare the structural and RF properties of VO2 thin films grown by magnetron sputtering on c-cut and r-cut sapphire substrates. The epitaxial growth of VO2 on c-cut sapphire gives rise to several crystallographic variants for the insulating M1 phase. Moreover, during the structural transition, simultaneous presence of both metallic and insulating phases is evidenced by x-ray diffraction over a large temperature range. Films grown on r-cut sapphire exhibit only two variants and present a very narrow temperature range of their structural transition. Interestingly, such structural differences of the films grown on c- and r-cut sapphire substrates have very little influence on their dc resistivity, while the transmission of the RF signal through the metallic phase was found much lower on c-cut than on r-cut sapphire. This supports the fact that r-cut sapphire is preferable for VO2-based RF device fabrication.

Nonlinear all-optical technology is an ultimate route for the next-generation ultrafast signal processing of optical communication systems. New nonlinear functionalities need to be implemented in photonics, and complex oxides are considered as promising candidates due to their wide panel of attributes. In this context, yttria-stabilized zirconia (YSZ) stands out, thanks to its ability to be epitaxially grown on silicon, adapting the lattice for the crystalline oxide family of materials. We report, for the first time to the best of our knowledge, a detailed theoretical and experimental study about the third-order nonlinear susceptibility in crystalline YSZ. Via self-phase modulation-induced broadening and considering the in-plane orientation of YSZ, we experimentally obtained an effective Kerr coefficient of n ^ 2 YSZ = 4.0 ± 2 × 10 − 19 m 2 · W − 1 in an 8% (mole fraction) YSZ waveguide. In agreement with the theoretically predicted n ^ 2 YSZ = 1.3 × 10 − 19 m 2 · W − 1 , the third-order nonlinear coefficient of YSZ is comparable with the one of silicon nitride, which is already being used in nonlinear optics. These promising results are a new step toward the implementation of functional oxides for nonlinear optical applications.

Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.

This study is focused on the link between the structural and electric properties of BaTiO3 thin films grown on SrRuO3-buffered (001) SrTiO3 substrates, SrRuO3 acting as bottom electrode. The growth regime and film structure are here tuned through the growth pressure for pulsed laser deposition in the 1–200 mTorr range. The dielectric, ferroelectric and leakage current properties are systematically measured for the different strain states of the BaTiO3 thin films on SrRuO3. The results are discussed with the help of ab initio calculations on the effects of Ba- and Ti-vacancies on BaTiO3 lattice parameters. A sharp increase of the dielectric constant is evidenced in the high pressure region, where the tetragonality of the BaTiO3 is decreasing rapidly with growth pressure. We interpret this divergence of the dielectric function as the signature of the vicinity of the phase boundary between the out-of-plane and in-plane orientations of the tetragonal BTO films.

Functional oxides are considered as promising materials for photonic applications due to their extraordinary and various optical properties. Especially, yttria-stabilized zirconia (YSZ) has a high refractive index (similar to 2.15), leading to a good confinement of the optical mode in waveguides. Furthermore, YSZ can also be used as a buffer layer to expand toward a large family of oxides-based thin-films heterostructures. In this paper, we report a complete study of the structural properties of YSZ for the development of integrated optical devices on sapphire in telecom wavelength range. The substrate preparation and the epitaxial growth using pulsed-laser deposition technique have been studied and optimized. High-quality YSZ thin films with remarkably sharp x-ray diffraction rocking curve peaks in 10(-3)degrees range have then been grown on sapphire (0001). It was demonstrated that a thermal annealing of sapphire substrate before the YSZ growth allowed controlling the out-of-plane orientation of the YSZ thin film. Single-mode waveguides were finally designed, fabricated, and characterized for two different main orientations of high-quality YSZ (001) and (111). Propagation loss as low as 2 dB/cm at a wavelength of 1380 nm has been demonstrated for both orientations. These results pave the way for the development of a functional oxides-based photonics platform for numerous applications including on-chip optical communications and sensing.

Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two-terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Lix CoO2 layer. These observations are very well correlated with the observed insulator-to-metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling - much further than the present cycling life of usual lithium-ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

Results of first-principles full-potential linearized augmented plane wave calculations of elastic and related electronic and thermodynamic properties of the quaternary Heusler alloys Ru2VAlxGa1-x (x = 0, 0.25, 0.5, 0.75, 1) are presented. These materials were found to have the L2(1) structure for all concentrations. The agreement between the theoretical and experimental lattice parameters for both Ru2VAl and Ru2VGa at various temperatures was found to be satisfactory. Our results provide predictions for the remaining mixed more >> Heusler alloys Ru2VAlxGa1-x (0 < x < 1) for which no direct experimental or theoretical data are presently available. In their equilibrium L2(1) structure, all concentrations are non-magnetic metals. A linear variation of the lattice parameter, bulk modulus, elastic constants and Debye temperature has been observed with x. (C) 2015 Elsevier B.V. All rights reserved.

The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.

A cyclo-olefin copolymer was subjected to an e-beam ionizing treatment. Two doses were studied: one corresponding to the recommended dose for the sterilization of pharmaceutical packaging (25 kGy), and a greater one to enhance the modifications caused by the treatment (150 kGy). The surface modifications were studied by X-ray photoelectron spectroscopy (XPS), contact angle measurements and atomic force microscopy (AFM). The roughness and the wettability of the surface were enhanced by the treatment. The consequences of the surface modifications on the drug interaction with the polymer were studied.

Monotonic and cyclic nanoindentation tests were carried out on Zr50Cu40Al10 bulk metallic glass (BMG) at loading rates ranging from 250 to 2500 mu N/s and at ambient temperature. We found that cyclic loadings induced a mechanical softening which appears to be dependent on the number of cycles and the loading rates. The effect of loading rates was compared with the same nanoindentation tests on specimens of Zr-based metallic glass coated with CrN and TiN films. The inelastic deformation on Zr-based metallic glass was studied by analysing the remnant indent morphology using atomic force microscopy. A free-volume mechanism was proposed for interpreting these observations quantitatively.

Polyurethane catheters made of Pellethane 2363-80AE® were treated with a low temperature plasma developed for the decontamination of reusable polymer devices in hospitals. We investigated the modifications of the polymer surface by studying the topographic modifications, the chemical modifications, and their consequences on the wettability and bacterial adhesion. This study showed that plasma treatment modified the topography and grafted oxygen and nitrogen species onto the surface, resulting in an increase in the surface polarity. This effect could be correlated to the number of nitrogen atoms interacting with the surface. Moreover, this study demonstrated the significance of multiscale heterogeneities, and the complexity of industrial medical devices made from polymers. Their surface can be heterogeneous, and they contain additives that can migrate and change the surface composition.