Electrical and thermal transport measurements are essential for investigating the electronic properties of single crystal materials. While traditional methods rely on manual contact placement directly on as-grown crystals, they offer no control over sample shape and face severe limitations in resolution and reproducibility, especially when dealing with crystals smaller than one millimeter. Focused ion beam lithography has emerged as a powerful alternative, enabling the fabrication of mesoscale devices with nanometer-scale precision, control over geometry and crystallographic orientation, deposition of electrical contacts, and fabrication of minimally invasive probes. This work presents a practical guide to microdevice fabrication using a Focused Ion Beam system equipped with an in situ flip-stage. We detail a complete protocol for sculpting complex three-dimensional structures from single crystals, leveraging the flip-stage's rotational degrees of freedom to define device width, thickness, and shape with high accuracy. The guide addresses key challenges, such as ion-induced surface damage and redeposition, and discusses strategies for mitigation. We also describe the deposition of electrical contacts via ion beam induced deposition, optimizing contact geometry and current density to achieve low-resistance, reproducible electrical contacts. Finally, we showcase a range of fabricated devices, demonstrating how the freedom to define 3D geometries enables the creation of unconventional device shapes, supporting more incisive material characterization and device prototyping.

Superlattice engineering, the introduction of periodic potentials to a material, can induce selective scattering events that modify the electrical properties of the material in predictable ways. Extending superlattice engineering to three-dimensional (3D) electronic materials can expand the tunability of their transport properties beyond traditional means such as doping. Here, we show that magnetotransport can be modified by superlattices in 3D materials based on the relative symmetry between the Fermi surface and nanostructured superlattice. We demonstrate commensuration oscillations in the ballistic transport regime of a nanostructured 3D material with the Weyl semimetal NbP. The oscillations encode information about the shared properties between the quasiparticles at the Fermi surface—including their momentum, charge, mass, and rotational symmetry—and the structure of the superlattice. These results point toward methods to engineer quantum transport in 3D electronic materials based on the mutual properties of the superlattice and Fermi surface.

Devices with a highly nonlinear resistance-voltage relationship are candidates for neuromorphic computing, which can be achieved by highly temperature dependent processes like ion migration. To explore the thermal properties of such devices, Scanning Thermal Microscopy (SThM) can be employed. However, due to the nonlinearity, the high resolution and quantitative method of AC-modulated SThM cannot readily be used. To this end, an extended nonequilibrium scheme for temperature measurement using SThM is proposed, with which the self-heating of nonlinear devices is studied without the need for calibrating the tip-sample contact for a specific material combination, geometry or roughness. Both a DC and an AC voltage are applied to the device, triggering a periodic temperature rise, which enables the simultaneous calculation of the tip-sample thermal resistance and the device temperature rise. The method is applied to HfO2-based RRAM devices, in which the kinetic processes of filamentary switching are governed by temperature. We image temperature and propagation of thermal waves and extract properties like the number of current filaments, thermal confinement and thermal cross-talk.

Superlattice engineering is a powerful way to tune the transport properties of a material. In this work we show that magnetotransport can be modified by superlattices in 3D materials based on the relative symmetry between the Fermi-surface and superlattice. We demonstrate commensuration oscillations in the ballistic transport regime of a nanostructured 3D material with the Weyl semimetal NbP, a signature typically limited to superlattices in 2D materials. The behavior of the oscillations encodes information about the shared properties between the quasiparticles at the Fermi-surface–including their momentum, charge, mass, and rotational symmetry–and the structure of the superlattice. The magnetic field and temperature dependence of the commensuration oscillations enables us to extract the Fermi-momenta and quasiparticle mass at an order of magnitude lower magnetic field and higher temperature than Shubnikov-de Haas quantum oscillations. Furthermore, we use a chiral superlattice to engineer asymmetric longitudinal magnetoresistance based on the charge of the quasiparticles and superlattice enantiomer. These results demonstrate nanopatterned superlattices as an effective method for fermiology, and also point towards new ways of engineering quantum transport in these systems based on the mutual properties of the superlattice and Fermi-surface.

When a charged particle is subject to both a periodic potential and magnetic field, oscillations in its conductivity occur when the field-induced cyclotron radius is commensurate with the period of the potential. This effect has been observed in two-dimensional systems including electron gases and graphene, and is related to the Hofstadter spectrum of magnetic minibands. Here we show that commensuration oscillations also can arise in the ballistic transport regime of a nanostructured 3D material, with the Weyl semimetal NbP. These oscillations encode information about the quasiparticles at the Fermi-surface, including their momentum, charge, mass, and rotational symmetry. In particular, we use the magnetic field and temperature dependence of the commensuration oscillations to extract the Fermi-momenta and quasiparticle mass, in good agreement with Shubnikov-de Haas quantum oscillations. Furthermore, we investigate the relationship between the engineered superlattice symmetry and resistivity response based on the symmetry of the Fermi surface and charge of the quasiparticles. These results demonstrate how nanopatterned superlattices can be used to characterize a 3D materials' fermiology, and also point towards new ways of engineering quantum transport in these systems.

The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which lead to greater losses and power dissipation at circuit level. This is mainly caused by enhanced surface scattering of charge carriers in copper interconnect wires at dimensions below 30 nm. A promising approach to mitigate this issue is to use directional conductors, i.e. materials with anisotropic Fermi surface, where proper alignment of crystalline orientation and transport direction can minimize surface scattering. In this work, we perform a resistivity scaling study of the anisotropic semimetal NbP as a function of crystalline orientation. We use here focused ion beam to pattern and scale down NbP crystallites to dimensions comparable to the electron scattering length at cryogenic temperatures. The experimental transport properties are correlated with the Fermi surface characteristics through a theoretical model, thus identifying the physical mechanisms that influence the resistivity scaling of anisotropic conductors. Our methodology provides an effective approach for early evaluation of anisotropic materials as future ultra-scalable interconnects, even when they are unavailable as epitaxial films.

Resistive RAM (RRAM) devices are candidates for neuromorphic computing devices in which the functionality lies in the formation and reversible rupture and gap-closing of conducting filaments in insulating layers. To explore the thermal properties of these nanoscale filaments, Scanning Thermal Microscopy (SThM) can be employed. However, since RRAM devices, as well as many other neuromorphic device types, have a non-linear resistance-voltage relationship, the high resolution and quantitative method of AC-modulated SThM cannot readily be used. To this end, an extended non-equilibrium scheme for temperature measurement using SThM is proposed, with which the self-heating of non-linear devices is studied without the need for calibrating the tip-sample contact for a specific material combination, geometry or roughness. Both a DC and an AC voltage are applied to the device, triggering a periodic temperature rise, which enables the simultaneous calculation of the tip-sample thermal resistance and the device temperature rise. The method is applied to HfO_2-based RRAM devices to extract properties like the number of current filaments, thermal confinement and thermal cross-talk. This approach could be applied to other thermometry techniques, including infrafred imaging and Raman thermometry.

The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-scaled interconnects (below 5 nm), due to their topologically protected surface states that have reduced electron scattering. Recent theoretical work on the topological chiral semimetal CoSi suggests that this material could offer lower resistivity than Cu at dimensions smaller than 10 nm. Here we investigate the scaling trend of textured and amorphous CoSi thin films, deposited by molecular beam epitaxy in a thickness range between 2 and 82.5 nm. Contrary to predictions of standard resistivity models, we report here a reduction in resistivity for thin amorphous CoSi films, which is instead consistent with surface-dominated transport. Moreover, magnetotransport measurements reveal significant enhancement of the magnetoresistance in scaled films, highlighting the complex transport mechanisms present in these highly disordered films at thicknesses of a few nanometers.

Weyl semimetals are defined by their unique Fermi surface, comprising pairs of Weyl points of opposite chirality, connected through topological surface states. Angle-resolved photoemission spectroscopy (ARPES) has been used to verify the existence of the Weyl points and the Fermi arcs. However, ARPES is limited in resolution, leading to significant uncertainty when characterizing the shape of the Fermi surface of semimetals and measuring features such as the distance between the Weyl points. Here, to surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing experiments. These techniques offer complementary information, enabling the reconstruction of the distinctive peanut-shaped cross section of the Weyl Fermi surface and accurately determining the separation between Weyl points in the Weyl semimetal NbP. Our Letter showcases the integration of quantum oscillations and transverse electron focusing, allowing for the measurements of complex Fermi surface geometries, concurrently with carriers’ transport properties, in high-mobility quantum materials. Published by the American Physical Society 2024

The topology of the Fermi surface significantly influences the transport properties of a material. Firstly measured through quantum oscillation experiments, the Fermi surfaces of crystals are now commonly characterized using angle-resolved photoemission spectroscopy (ARPES), given the larger information volume it provides. In the case of Weyl semimetals, ARPES has proven remarkably successful in verifying the existence of the Weyl points and the Fermi arcs, which define a Weyl Fermi surface. However, ARPES is limited in resolution, leading to significant uncertainty when measuring relevant features such as the distance between the Weyl points. While quantum oscillation measurements offer higher resolution, they do not reveal insights into the cross-sectional shape of a Fermi surface. Moreover, both techniques lack critical information about transport, like the carriers mean free path. Here, we report measurements unveiling the distinctive peanut-shaped cross-section of the Fermi surface of Weyl fermions and accurately determine the separation between Weyl points in the Weyl semimetal NbP. To surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing (TEF) experiments, conducted on microstructured single-crystals. The TEF spectrum relates to the Fermi surface shape, while the frequency of the quantum oscillations to its area. Together, these techniques offer complementary information, enabling the reconstruction of the distinctive Weyl Fermi surface geometry. Concurrently, we extract the electrical transport properties of the bulk Weyl fermions. Our work showcases the integration of quantum oscillations and transverse electron focusing in a singular experiment, allowing for the measurements of complex Fermi surface geometries in high-mobility quantum materials.

The fascination with semimetals, especially Dirac and Weyl semimetals, is given by their surprisingly strong response to magnetic fields. In particular, the extremely large magnetoresistance (XMR), i.e., the change in electrical resistivity as a function of the applied magnetic field, has attracted interest because of its deviation by several orders of magnitude from the behavior of normal metals, and its potential for technological applications. To date, it is unclear if the XMR in topological semimetals is inherently correlated to the very high electron mobility and electron-hole compensation, or to other exotic mechanisms. Here, we show that the relativistic and topological nature of charge carriers of the Weyl semimetal niobium phosphide (NbP) are only indirect causes of the XMR. Instead, the XMR can be explained by the very long mean free path le(4 K) approximate to 8 mu m in combination with the small cyclotron orbits emerging in the presence of a magnetic field rc (9 T) approximate to 20 nm of the NbP's Weyl electrons. More precisely we find MR = c le/rc, where c is a parameter independent of temperature and angle between the magnetic field and the crystal. To demonstrate, we use temperature and angle-dependent magnetoresistance measurements, and extract the mean free path and cyclotron radius from an analysis of the Shubnikov-de Haas oscillation.

Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm 2 /Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.

Abstract The chiral anomaly - a hallmark of chiral spin-1/2 Weyl fermions - is an imbalance between left- and right-moving particles that underpins phenomena such as particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The discovery that chiral crystals can host higher-spin generalizations of Weyl quasiparticles without high-energy counterparts, known as multifold fermions, raises the fundamental question of whether the chiral anomaly is a more general phenomenon. Answering this question requires materials with chiral quasiparticles within a sizable energy window around the Fermi level that are unaffected by extrinsic effects such as current jetting. Here, we report the chiral anomaly of multifold fermions in CoSi, which features multifold bands within ~0.85 eV of the Fermi level. By excluding current jetting through the squeezing test, we measure an intrinsic, longitudinal negative magnetoresistance. We develop a semiclassical theory to show that the negative magnetoresistance originates in the chiral anomaly, despite a sizable and detrimental orbital magnetic moment contribution. A concomitant non-linear Hall effect supports the multifold-fermion origin of the magnetotransport. Our work confirms the chiral anomaly of higher-spin generalizations of Weyl fermions, currently inaccessible outside solid-state platforms.

With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO2 especially appealing for implementation in oscillating neural networks for artificial intelligence (AI) applications, to solve constraint satisfaction problems, and for pattern recognition. Its integration into large networks of oscillators on a Silicon platform still poses challenges associated with the stabilization in the correct oxidation state and the ability to fabricate a structure with predictable electrical behavior showing very low variability. In this work, the role played by the different annealing parameters applied by three methods (slow thermal annealing, flash annealing, and rapid thermal annealing), following the vanadium oxide atomic layer deposition (ALD), on the formation of VO2 grains is studied and an optimal substrate stack configuration that minimizes variability between devices is proposed. Material and electrical characterizations are performed on the different films and a step-by-step recipe to build reproducible VO2-based oscillators is presented, which is argued to be made possible thanks to the introduction of a hafnium oxide (HfO2) layer between the silicon substrate and the vanadium oxide layer. Up to seven nearly identical VO2-based devices are contacted simultaneously to create a network of oscillators, paving the way for large-scale implementation of VO2 oscillating neural networks.

Recent progress in the development of phase-change materials is enabling their use for novel approaches in spike-based learning circuits and brain-inspired computing architectures [1], [2]. The race to leverage efficient low-power neural processing systems whose fundamental operations are akin to those of animal brains drives the community to explore new ‘neuromorphic’ materials and devices [3]. Amongst the candidates suitable to deliver such types of devices, vanadium-dioxide (VO 2 ) offers promising features [4]. Its polycrystalline morphology, once integrated on a Si platform, has the ability to oscillate from a high to a low resistive statenear room temperature (68°C) [5]. These natural oscillations triggered by biasing VO 2 at low voltage provide means to build a network of electronic oscillators with tremendous potential for neural network architectures, AI applications, and optimization capabilities [1], [3], [6], [7]. In particular, oscillation-based computing serves best to solve constraint-satisfaction problems [8], [9]. Any optimization problem, simple in appearance, typically requires heavy computing resources calling for long processing times and even larger energy consumption [2]. In this work, we show the power and the number of cycles needed to reach a solution can be dramatically reduced to solve NP-hard problems with our befitted VO 2 -based $3\times 3$ oscillating neural networks (ONNs).

Waveguide coupled III-V heterostructure photodetectors are fabricated by template-assisted selective epitaxy. The devices show responsivities up to 0.2 A/W and 3dB frequencies exceeding 50 GHz. The TASE method allows for a seamless integration of III-Vs with Si features and we also demonstrate hybrid III-V/Si photonic crystal emitters.

The chemical and morphological influences of SF6 and Ar plasmas on bisphenol-A-polycarbonate (PC) and the influence of plasma treatments on Al metallisation were investigated. The treatment of the sample, X-ray photoelectron spectroscopic (XPS) and scanning force microscopic (SFM) analyses were made in an ultrahigh vacuum (UHV) chamber without breaking the vacuum. Using SF6 for the etching process, a significant inclusion of fluorine (C-F, C-F2) takes place. After argon plasma treatment of the PC surface a reduction in the carboxylic carbon was observed in the C1s spectrum. Both kinds of plasma treatments reduce the double and single bonded oxygen. During the metallisation process on an Ar-plasma treated PC surface aluminum couples via oxygen to the aromatic carbon. Al-metallisation on the SF6 pre-etched surface leads to the formation of an Al-F interlayer. With the SFM, the roughening effects on the nm scale after the two plasma treatments is observable. On the virgin PC, Al layers can be seen as slightly bound clusters. On both plasma pre-treated PC surfaces the Al grows as a film.

In recent times the chiral semimetal cobalt monosilicide (CoSi) has emerged as a prototypical, nearly ideal topological conductor hosting giant, topologically protected Fermi arcs. Exotic topological quantum properties have already been identified in CoSi bulk single crystals. However, CoSi is also known for being prone to intrinsic disorder and inhomogeneities, which, despite topological protection, risk jeopardizing its topological transport features. Alternatively, topology may be stabilized by disorder, suggesting the tantalizing possibility of an amorphous variant of a topological metal, yet to be discovered. In this respect, understanding how microstructure and stoichiometry affect magnetotransport properties is of pivotal importance, particularly in case of low-dimensional CoSi thin films and devices. Here we comprehensively investigate the magnetotransport and magnetic properties of ≈25 nm Co1–xSix thin films grown on a MgO substrate with controlled film microstructure (amorphous vs textured) and chemical composition (0.40 < x < 0.60). The resistivity of Co1–xSix thin films is nearly insensitive to the film microstructure and displays a progressive evolution from metallic-like (dρxx/dT > 0) to semiconducting-like (dρxx/dT < 0) regimes of conduction upon increasing the silicon content. A variety of anomalies in the magnetotransport properties, comprising for instance signatures consistent with quantum localization and electron–electron interactions, anomalous Hall and Kondo effects, and the occurrence of magnetic exchange interactions, are attributable to the prominent influence of intrinsic structural and chemical disorder. Our systematic survey brings to attention the complexity and the challenges involved in the prospective exploitation of the topological chiral semimetal CoSi in nanoscale thin films and devices.

Molecules are predicted to be chemically tunable towards high thermoelectric efficiencies and they could outperform existing materials in the field of energy conversion. However, their capabilities at the more technologically relevant temperature of 300 K are yet to be demonstrated. A possible reason could be the lack of a comprehensive technique able to measure the thermal and (thermo)electrical properties, including the role of phonon conduction. Here, by combining the break junction technique with a suspended heat-flux sensor, we measured the total thermal and electrical conductance of a single molecule, at room temperature, together with its Seebeck coefficient. We used this method to extract the figure of merit zT of a tailor-made oligo(phenyleneethynylene)-9,10-anthracenyl molecule with dihydrobenzo[ b ]thiophene anchoring groups (DHBT-OPE3-An), bridged between gold electrodes. The result is in excellent agreement with predictions from density functional theory and molecular dynamics. This work represents the first measurement, within the same setup, of experimental zT of a single molecule at room temperature and opens new opportunities for the screening of several possible molecules in the light of future thermoelectric applications. The protocol is verified using SAc-OPE3, for which individual measurements for its transport properties exist in the literature.

Due to their structured density of states, molecular junctions provide rich resources to filter and control the flow of electrons and phonons. Here we compute the out of equilibrium current-voltage characteristics and dissipated heat of some recently synthesized oligophenylenes (OPE3) using the Density Functional based Tight-Binding (DFTB) method within Non-Equilibrium Green's Function Theory (NEGF). We analyze the Peltier cooling power for these molecular junctions as function of a bias voltage and investigate the parameters that lead to optimal cooling performance. In order to quantify the attainable temperature reduction, an electro-thermal circuit model is presented, in which the key electronic and thermal transport parameters enter. Overall, our results demonstrate that the studied OPE3 devices are compatible with temperature reductions of several K. Based on the results, some strategies to enable high performance devices for cooling applications are briefly discussed.