In order to take up the challenge of BAW-based time reference, this paper presents new BAW/Integrated Circuits (IC) co-integration considerations. For the demonstration, a SiP approach is proposed where the Solidly Mounted Resonator (SMR) has been directly flip-chipped on the top of the IC. This 2.5 GHz oscillator reaches a -93 dBc/Hz phase noise at a 2 kHz carrier offset for a 7.3 mW power consumption. A 5 bit switched capacitor bank permits to correct process deviations with a 12.5 kHz accuracy while a varactor capacitance allows compensating a SMR with a -4.2 ppm/°C Temperature Coefficient of Frequency (TCF) in a [-40°C,85°C] temperature range.

This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and BiCMOS platforms are also presented. Finally, we conclude on the suitability of different Si technologies to address such high-frequency applications