Packages capable of supporting large arrays of high-coherence superconducting qubits are vital for the realisation of fault-tolerant quantum computers and the necessary high-throughput metrology required to optimise fabrication and manufacturing processes. We present a wafer-scale packaging architecture supporting over 500 qubits on a single 3-inch die. The package is engineered to suppress parasitic RF modes, and to mitigate material loss through simulation-informed design while managing differential thermal contraction to ensure robust operation at millikelvin temperatures. System-level heat-load calculations from a large wiring payload show this package may be operated in commercial dilution refrigerators. Measurements of the qubits loaded into the package show median T_1, T_2e∼ 100 μs (∼100 qubits) alongside readout with median fidelity of 97.5

Josephson junctions manufactured to tight tolerances are necessary components for superconducting quantum computing. Developing precise manufacturing techniques for Josephson junctions requires an understanding of their make-up and robust feedback metrics against which to optimize. Here, we consider complementary techniques and assess what conclusions they allow us to draw about the barriers in junctions. Monte Carlo simulations of barriers show that standard deviations of 15-20% of the total barrier thickness are compatible with our experimental data. Electrical breakdown allows us to probe the weakest points in barriers. Narrowing the distribution of this breakdown provides a promising feedback mechanism for barrier optimisation. Grouping junctions by breakdown voltage allows us to identify sub-ensembles of junctions with different median resistance. Transmission electron microscopy can be used to find average barrier thickness, although we highlight challenges in forming robust conclusions on the distribution of thicknesses in a barrier from these experiments.

Building more powerful quantum computers requires manufacturing processes with tight tolerances. To improve the tolerances on Josephson junctions, techniques to fine tune their properties after fabrication have been developed. Understanding how tuning techniques may physically modify the tunnel barrier of a Josephson junction is important and will enable these techniques to be optimised. We develop a model of junction tuning based on depinning theory to interpret a phase diagram of tuning rate. We extract the dependence on temperature, time-varying voltages and oscillation frequency. Using depinning theory we are able to show both why time-varying annealing potentials result in controlled junction tuning and how such protocols can be optimised. We examine how tuning changes the electrical breakdown of barriers and discrepancies between modeled and measured higher energy levels of transmon qubits.

Superconducting quantum computers leverage superconducting qubits, systems with well-defined energy levels, the spacing of which is determined by the properties of embedded Josephson junctions. Indeterminacy of Josephson junction manufacturing limits large-scale superconducting circuits; however, junction-by-junction tuning affords the possibility of an order of magnitude improvement of determinacy-although the origin of this tuning effect is uncertain. Understanding how tuning techniques may physically modify the tunnel barrier of a Josephson junction is important and will enable these techniques to be optimized. We develop a model of junction tuning based on depinning theory to interpret a phase diagram of the tuning rate. We extract the dependence on temperature, time-varying voltages, and oscillation frequency. Comparing the effect of junction tuning on room-temperature I-V's, electrical breakdown, and frequency of higher-energy levels of transmon qubits indicates that the tuning process leaves the barrier thickness unchanged but modifies its composition.

Electron paramagnetic resonance (EPR) spectroscopy is a broadly used technique to study paramagnetic centers in diverse fields ranging from biology to quantum technologies. The availability of well-established commercial instrumentation, including features such as rapid sample exchange, has been a key enabler for EPR to be applied widely across disciplines. Here, a three-order-of-magnitude increase is presented in the spin number sensitivity of the commonly used X-band pulsed EPR while retaining full compatibility with conventional instrumentation and typical sample conditions. This approach employs planar spiral-shaped microresonators with 7 nL mode volumes fabricated from yttrium barium copper oxide (YBCO) high-temperature superconductor. A wide range of microwave coupling is achieved by a single microresonator inside a conventional EPR tube, loaded into an EPR cavity. The performance of the spiral microresonators is demonstrated through a suite of pulsed EPR experiments on standard samples, including dipolar and hyperfine spectroscopies. By placing a sample within a microfluidic microstructure fabricated to match the mode profile of the microresonator, a high-fidelity spin control is obtained with a spin-number sensitivity of 107 spins/G/ Hz $\sqrt {\text{Hz}}$ . The approach significantly advances the applicability of superconducting microresonators as versatile and readily applicable tools for high sensitivity EPR.

Superconducting qubits are a promising route to achieving large-scale quantum computers. A key challenge in realising large-scale superconducting quantum processors involves mitigating frequency collisions. In this paper, we present an approach to tuning fixed-frequency qubits with the use of an electron beam to locally anneal the Josephson junction. We demonstrate the ability to both increase and decrease the junction barrier resistance. The technique shows an improvement in wafer scale frequency targetting by assessing the frequency collisions in our qubit architecture. Coherence measurements are also done to evaluate the performance before and after tuning. The tuning process utilises a standard electron beam lithography system, ensuring reproducibility and implementation by any group capable of fabricating these Josephson junctions. This technique has the potential to significantly improve the performance of large-scale quantum computing systems, thereby paving the way for the future of quantum computing.

All-optical magnetic switching promises ultrafast, high-resolution magnetisation control with the technological attraction of requiring no magnetic field. Existing all-optical switching schemes are driven by ultrafast transient effects, typically requiring power-hungry femtosecond-pulsed lasers and complex magnetic materials. Here, we demonstrate deterministic, all-optical magnetic switching in simple ferromagnetic nanomagnets (Ni$_{81}$Fe$_{19}$, Ni$_{50}$Fe$_{50}$) with sub-diffraction limit dimensions using a focused low-power, linearly-polarised continuous-wave laser. Isolated nanomagnets are switched across a range of dimensions, laser wavelengths and powers. All square-geometry artificial spin ice vertex configurations are written, including ground-state and energetically-unfavourable `monopole-like' states at powers as low as 2.74 mW. Usually, magnetic switching with linearly polarised light is symmetry-forbidden; however, here the laser spot has a similar size to the nanomagnets, producing an absorption distribution dependent on the relative nanoisland-spot displacement. We attribute the observed deterministic switching to the transient dynamics of this asymmetric absorption. No switching is observed in Co samples, suggesting the multi-species nature of NiFe alloys plays a role in reversal. The results presented here usher in cheap, low-power optically-controlled devices with impact across data storage, neuromorphic computation and reconfigurable magnonics.

Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert damping, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical excitation and detection, achieving spin wave control with microwaves is highly desirable, as modern integrated information technologies predominantly are operated with these. The intrinsically small numbers of spins, however, poses a major challenge to this. Here, we present a hybrid approach to detect spin dynamics mediated by photon-magnon coupling between high-Q superconducting resonators and ultra-thin flakes of Cr2Ge2Te6 (CGT) as thin as 11 nm. We test and benchmark our technique with 23 individual CGT flakes and extract an upper limit for the Gilbert damping parameter. These results are crucial in designing on-chip integrated circuits using vdW magnets and offer prospects for probing spin dynamics of monolayer vdW magnets.

The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with (Bi0.06Sb0.94)2Te3 topological insulator (TI) JJs using ultrahigh vacuum fabrication techniques. Microwave losses on our substrates, which host monolithically integrated hardmasks used for the selective area growth of TI nanostructures, imply microsecond limits to relaxation times and, thus, their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.

As in conventional computing, memories for quantum information benefit from high storage density and, crucially, random access, or the ability to read from or write to an arbitrarily chosen register. However, achieving such random access with quantum memories in a dense, hardware-efficient manner remains a challenge. Here we introduce a protocol using chirped pulses to encode qubits within an ensemble of quantum two-level systems, offering both random access and naturally supporting dynamical decoupling to enhance the memory lifetime. We demonstrate the protocol in the microwave regime using donor spins in silicon coupled to a superconducting cavity, storing up to four weak, coherent microwave pulses in distinct memory modes and retrieving them on demand up to 2 ms later. This approach offers the potential for microwave random access quantum memories with lifetimes exceeding seconds, while the chirped pulse phase encoding could also be applied in the optical regime to enhance quantum repeaters and networks.

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI ^{125}Te^{+} donors implanted into natural Si at depths as shallow as 20 nm. We show that surface band bending can be used to ionize such near-surface Te to spin-active Te^{+} state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, and relaxation (T_{1}) and coherence times (T_{2}) and show how a zero-field 3.5 GHz "clock transition" extends spin coherence times to over 1 ms, which is about an order of magnitude longer than other near-surface spin systems.

Rare-earth doped crystals have long coherence times and the potential to provide quantum interfaces between microwave and optical photons. Such applications benefit from a high cooperativity between the spin ensemble and a microwave cavity -- this motivates an increase in the rare earth ion concentration which in turn impacts the spin coherence lifetime. We measure spin dynamics of two rare-earth spin species, $^{145}$Nd and Yb doped into Y$_{2}$SiO$_{5}$, coupled to a planar microwave resonator in the high cooperativity regime, in the temperature range 1.2 K to 14 mK. We identify relevant decoherence mechanisms including instantaneous diffusion arising from resonant spins and temperature-dependent spectral diffusion from impurity electron and nuclear spins in the environment. We explore two methods to mitigate the effects of spectral diffusion in the Yb system in the low-temperature limit, first, using magnetic fields of up to 1 T to suppress impurity spin dynamics and, second, using transitions with low effective g-factors to reduce sensitivity to such dynamics. Finally, we demonstrate how the `clock transition' present in the $^{171}$Yb system at zero field can be used to increase coherence times up to $T_{2} = 6(1)$ ms.

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI ^{125}Te^{+} donors implanted into natural Si at depths as shallow as 20 nm. We show that surface band bending can be used to ionize such near-surface Te to spin-active Te^{+} state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, and relaxation (T_{1}) and coherence times (T_{2}) and show how a zero-field 3.5 GHz "clock transition" extends spin coherence times to over 1 ms, which is about an order of magnitude longer than other near-surface spin systems.

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI $^{125}$Te$^+$ donors implanted into natural Si at depths as shallow as 20~nm. We show that surface band-bending can be used to ionise such near-surface Te to spin-active Te$^+$ state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, relaxation ($T_1$) and coherence times (\ttwo) and show how a zero-field 3.5~GHz `clock transition' extends spin coherence times to over 1~ms, which is about an order of magnitude longer than other near-surface spin systems.

Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by hydrogen silsesquioxane resist after electron-beam exposure remains intact after electric breakdown of the graphene. We explore the conductance switching behavior that is common in graphene nanostructures fabricated via feedback-controlled breakdown and show that it can be attributed to atomic-scale fluctuations of graphene below the encapsulating layer. Our findings open up routes for fabricating encapsulated room-temperature single-electron nanodevices and shed light on the underlying physical mechanism of conductance switching in these graphene nanodevices.

James O’Sullivan, ∗ Oscar W. Kennedy, ∗ Kamanasish Debnath, Joseph Alexander, Christoph W. Zollitsch, Mantas Šimėnas, Akel Hashim, 4 Christopher N. Thomas, Stafford Withington, Irfan Siddiqi, 4 Klaus Mølmer, and John J. L. Morton 6 London Centre for Nanotechnology, UCL, 17-19 Gordon Street, London, WC1H 0AH, UK Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark Quantum Nanoelectronics Laboratory, Department of Physics, UC Berkeley, California 94720, USA Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, UK Department of Electrical and Electronic Engineering, UCL, Malet Place, London, WC1E 7JE, UK

Mantas Šimėnas, ∗ James O’Sullivan, ∗ Oscar W. Kennedy, ∗ Sen Lin, Sarah Fearn, Christoph W. Zollitsch, Gavin Dold, Tobias Schmitt, Peter Schüffelgen, Ren-Bao Liu, and John J. L. Morton 5, † London Centre for Nanotechnology, UCL, 17-19 Gordon Street, London, WC1H 0AH, UK Department of Physics, Centre for Quantum coherence and The Hong Kong Institute of Quantum Information Science and Technology, The Chinese University of Hong Kong, Hong Kong, China Department of Materials, Imperial College London, London SW7 2BX, UK Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich and RWTH Aachen University, Germany Department of Electrical and Electronic Engineering, UCL, Malet Place, London, WC1E 7JE, UK