Transparent conductive thin films with effective near- UV attenuation are becoming crucial for UV-shielding technologies, smart windows, protective coatings, and next-generation optoelectronic devices. Among the commercially available transparent conducting oxides, ITO has been extensively utilized because of its optimum combination of high optical transparency and electrical conductivity. However, the development of alternative transparent conductive materials with tunable optical properties is required due to the relatively broad optical bandgap of ITO, which limits efficient near-UV absorption, additionally owing to the scarcity of Indium, alternate to indium free TCO are of research focus. We report AZO thin films processed through cost-effective deposition with engineered optical bandgap that enables improved near-UV absorption compared to commercial ITO. The AZO films exhibit an optical bandgap of ~3.27 eV compared to ~4.11 eV for commercial ITO, enabling enhanced absorption in the near-ultraviolet region while maintaining optical transparency in the visible range. The defect-mediated electronic changes linked to oxygen vacancy creation and Al incorporation are proposed to contribute to the enhanced UV attenuation behavior. A real-time in-house ultraviolet intensity measurement system was developed in order to experimentally test the UV-shielding capabilities and showed a notable suppression of transmitted UV light.

One-dimensional (1D) semiconductor metal oxide nanofibers (NFs) have emerged as promising materials for high-performance field-effect transistors (FETs) due to their superior surface-to-volume ratio, short charge-transport pathway for high carrier mobility, excelent optical transparency, and mechanical flexibility. This review provides a comprehensive overview of representative metal oxide nanofibers and synthesis methods, device configurations, electrical properties, performance metrics, emerging applications, challenges, and future prospects of these nanostructures in FETs. Key materials such as doped In2O3, ZnO, SnO2, In-Zn-O, Sn-Zn-O, and In-Ga-Zn-O (IGZO), In-Sn-Zn-O (ITZO) are discussed, highlighting advancements in fabrication techniques like electrospinning, hydrothermal, and blow spinning processes. Performance improvements, including field-effect mobility exceeding 10 cm2 V−1 s−1 and on/off current ratios above 106, underscore their potential in transparent and flexible electronics. Finally, a comprehensive review of MO NF-based FETs for emerging applications, including gas sensors, biosensors, wearable electronics, neuromorphic electronics and memory devices, phototransistors, and optoelectronic devices, is presented. The discussion highlights the versatility and multifunctionality of semiconductor MO NF FETs, demonstrating their significant potential for diverse electronic, sensing, and energy-related applications. Despite challenges like high contact resistance and scalability, ongoing innovations position these materials critical for next generation nanoelectronics.

Spin-coated oxide semiconductors enable low-cost, large-area manufacturing. Nevertheless, the quantitative correlation among the postannealing conditions, microstructure, stoichiometry, and charge transport remains unclear. To clarify these relationships, we postannealed Al-doped ZnO (AZO) thin films and analyzed their microstructures and chemistries by SEM, XRD, TEM, and XPS. Plane-view SEM revealed similar to 150 nm island-like secondary aggregates, whereas XRD did not resolve the distinct AZO diffraction peaks. Cross-sectional TEM revealed primary nanoparticles that coarsened upon annealing. XPS showed increased intensity of the O 1s component near 531 eV, associated with oxygen-deficient states, indicating enhanced oxygen nonstoichiometry. These microstructural and stoichiometric changes were correlated with device behavior. Postannealing increased the field-effect mobility and on/off ratio of the AZO thin-film transistors (TFTs) by 302.4% and 602.3%, respectively. The mobility scaled linearly with the mean primary particle size within the annealing conditions investigated in this study (R 2 = 0.986). This study provides an experimentally supported relationship among process, microstructure/stoichiometry, and transport under modest thermal budgets and offers practical guidelines for optimizing solution-combustion oxide TFTs.

Ferroelectric hafnia has emerged as a transformative material in advanced electronics, with Complementary Metal Oxide Semiconductor (CMOS) compatibility, robust ferroelectricity, and scalability for applications including memory and ferroelectric field effect transistors (FEFETs). We demonstrate wake-up-free, robust ferroelectricity in solution-processed La-doped hafnia (LHO, 40 nm thick). By leveraging a metal-insulator transition (MIT) in the bottom electrode, TiOx(Ny), a Mott Insulator, we engineer a depolarization-field-controlled reversible polar-to-non-polar phase transitions via the proximity effect in the ferroelectric hafnia layer. We further show that capping the ferroelectric layer with Al2O3 of various thicknesses, allows for subtle oxidation of the bottom electrode, resulting in tunable phase transitions between 140 and 260 K. Using the idea of proximity-coupled phase-transitioning ferroelectric layers, we demonstrate phase-change ferroelectric field-effect transistor (PCFE-FET) integrated onto a 2D MoS2 channel. Near the induced phase transition temperatures, our devices show steep subthreshold slopes surpassing the Boltzmann limit. The temperature tunability of the phase transitions renders our PC-FEFETs highly promising for low-power computing solutions for both cryogenic and near-room temperature applications.

The rapid evolution of next-generation electronics necessitates the seamless integration of metal oxide semiconductors (MOS) with full flexibility and stretchability. MOS materials exhibit exceptional electronic mobility, environmental stability, and scalable processability, making them indispensable for future flexible and stretchable electronic applications. Innovations in MOS-based thin-film transistor (TFT) fabrication have enabled sustainable, low-temperature processing, offering cost-efficient pathways for advanced electronic architectures. For practical implementations, flexible and stretchable substrates such as polyethylene terephthalate, polycarbonate, polyethylene naphthalate, polyurethane acrylate, polyethersulfone, polyimide (PI), composite PI , poly(amide-imide), SU8, thermoplastic polyurethane (TPU), and polydimethylsiloxane are pivotal. A broad spectrum of semiconductors including MOS, two-dimensional materials, carbon nanostructures, and hybrid organic-inorganic systems enables high-performance device engineering. Among MOS, zinc oxide (ZnO), indium oxide (In2O3), tin oxide (SnO2), doped ZnO, indium gallium ZnO , zinc tin oxide (ZTO), and indium ZTO dominate flexible TFT technology due to their superior charge transport, uniformity, and large-area process compatibility. This review delves into recent MOS advancements, underscoring their transformative role in flexible electronics, including wearable technology, foldable displays, and smart systems. By addressing modern electronics' scalability, cost, and durability challenges, MOS establishes itself as a cornerstone for the future of high-performance, stretchable, and sustainable electronic innovations.

Integrating unconventional HfO2-based ferroelectrics in thin film transistors (TFTs) has proven effective in enhancing performance by stabilizing negative capacitance (NC). This is achieved by incorporating the ferroelectric in series with a high-permittivity dielectric as a passive TFT component. However, implementing this on flexible, temperature-sensitive substrates presents significant challenges. The primary focus in TFTs on flexible substrates is their fabrication with a considerably low thermal budget to avoid damaging the underlying substrate. Herein, we introduce an approach to stabilize the desired ferroelectric polar phase of hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) through superficial plasma treatment in the argon environment. Plasma energizes Ar+ ions, whose bombardment induces oxygen vacancies, thereby stabilizing the desired orthorhombic phase at low temperatures. The IGZO-channel TFTs incorporating HZO/HfO2 passive stacks exhibit a substantial enhancement in subthreshold swing (SS), achieving a 72 % reduction from 147 mV/dec to 41 mV/dec, along with a notable increase in on-state currents (Ion) compared to conventional TFTs utilizing only HfO2 dielectrics. The field-effect mobility (mu) significantly improves from 5.7 f 0.2 to 28.8 f 6.2 cm2/V center dot s. Flexible TFTs fabricated on polyimide substrates also show excellent mechanical stability, maintaining consistent Ioneven after 10,000 bending cycles. Moreover, these TFTs exhibit enhanced mu of 72 f 13.5 cm2/V center dot s in the flat state and 33.9 f 3.8 cm2/V center dot s under bending-both notably higher than those of TFTs without the HZO-assisted NC effect.

Herein, we have solution-processed PVDF films crystallized into a polar beta phase via electrostatic interaction with a polar solvent and its controlled demixing in a nonsolvent bath. Subsequently, the self-polarization alignment is ascertained on the treatment of these films in a low-pH aqueous solution. The combined X-ray diffraction, FTIR spectroscopy, and piezoelectric force microscopy (PFM) results revealed electroactive phases and an unseen polarization locking in these films. The out-of-plane cantilever deflection on application of a series of DC bias voltages implies a self-aligned property in these prepared films. The developed piezoelectric generator is shown to generate rms voltage, rms current, and power density of 4 V, 0.16 mu A, and 100 mu W cm-3, respectively, on application of a force as low as 1 N. The harvester showed charging of a range of capacitors, with a 10 mu F capacitor reaching 1.0 V in less than 100 s. Further, on placing a 2.2 mu F capacitor in series with a force-sensitive resistor (FSR) and a known resistor of 470 Omega, the human actuation force sensing in FSR is realized, which is validated with the voltage variation across the known resistor. This energy harvester can expand the use of low-powered IoT devices by enabling self-powered sensing, paving the way for future integration into commercial and smart technologies.

Engineered defect chemistry in ultrathin (≈5 nm) hafnia through substitutional cobalt (HCO) is investigated for selective glucose sensing. Thin films of HCO, grown using chemical solution deposition (CSD)-traditionally used to grow thick films-on silicon, show significant glucose sensing activity and undergo monoclinic to orthorhombic phase transformation. The presence of multivalent cobalt in hafnia, with oxygen vacancies in proximity, selectively oxidizes glucose with minimal interference from ascorbic acid, dopamine, and uric acid. Theoretical investigations reveal that these oxygen vacancies create a shallow donor level that significantly enhances electrocatalytic activity by promoting charge transfer to the conduction band. This results in considerable selectivity, repeatability, and reproducibility in sensing characteristics. These findings highlight the technological importance of using CSD for thin films, paving the way for ultrathin CSD-processed HCOs as potential candidates for selective glucose sensing applications.

The present spotlight article addresses the challenges associated with metal oxide dielectric thin films deposited from liquid-phase precursors, which are often deemed inferior in thin film quality; suboptimal film quality adversely impacts the performance of electronic devices, particularly thin film transistors (TFTs). The traditional spin-casting method contributes to porous film masses due to the evaporation of solvent, and thermal annealing results in rough interfaces. Also, the presence of a high concentration of oxygen vacancies introduces traps, leading to hysteresis. To overcome these, the present article explores various film treatment methodologies, including Ar/O-2 plasma treatment, the use of high-oxygen affinity dopants, and spray deposition of prepurified solution precursors. These treatments significantly improved film characteristics and TFT performance. Aluminum-doped zirconium oxide (ZAO) dielectrics treated with Ar/O-2 plasma showed enhanced density (4.16 g/cm(3)). ZAO/amorphous indium gallium zinc oxide TFTs exhibited hysteresis-free characteristics with a field effect mobility (mu) of >15 cm(2)/V-s and an on:off (I-ON:I-OFF) switching ratio of 10(8). Using purified precursors for depositing dielectric ZrOx, along with amorphous indium gallium zinc oxide, resulted in mu and I-ON:I-OFF values exceeding 15 cm(2)/V-s and 10(9), respectively. Additionally, incorporating substitutional dopants such as hafnium in ZrOx improved TFT performance. TFTs composed of ZrOx and lanthanum zinc oxide demonstrated a mu of 22.2 cm(2)/V-s and I-ON:I-OFF of 10(8). These performance parameters were observed across a variety of devices and demonstrated stability. These enhanced performance parameters are attributed to improved film quality, including reduced roughness and defect-traps, facilitating seamless electrical conduction at the interface.

Neuromorphic devices are electronic devices that mimic the information processing methods of neurons and synapses, enabling them to perform multiple tasks simultaneously with low power consumption and exhibit learning ability. However, their large-scale production and efficient operation remain a challenge. Herein, we fabricated an aluminum-doped zinc oxide (AZO) synaptic transistor via solution-based spin-coating. The transistor is characterized by low production costs and high performance. It demonstrates high responsiveness under UV laser illumination. In addition, it exhibits effective synaptic behaviors under blue LED illumination, indicating high-efficiency operation. The paired-pulse facilitation (PPF) index measured from optical stimulus modulation was 179.6%, indicating strong synaptic connectivity and effective neural communication and processing. Furthermore, by modulating the blue LED light pulse frequency, an excitatory postsynaptic current gain of 4.3 was achieved, demonstrating efficient neuromorphic functionality. This study shows that AZO synaptic transistors are promising candidates for artificial synaptic devices.

Neuromorphic systems based on memristor arrays have not only addressed the von Neumann bottleneck issue but have also enabled the development of computing applications with high accuracy. In this study, an artificial neural architecture based on a 10 x 10 IGZO memristor array is presented to emulate synaptic dynamics for performing artificial intelligence (AI) computing with high recognition accuracy rate. The large area 10 x 10 IGZO memristor array was fabricated using the photolithography method, resulting in stable and reliable memory operations. The bipolar switching at -2 V-2.5 V, endurance of 500 cycles, retention of >10(4) s, and uniform V-set/V-reset operation of 100 devices were achieved by modulating the oxygen vacancy in the IGZO film. The emulation of electric synaptic dynamics was also observed, including potentiation-depression, multilevel long-term memory (LTM), and multilevel short-term memory (STM), revealing highly linear and stable synaptic functions at different modulated pulse settings. Additionally, electrical modeling (HSPICE) with vector-matrix measurements and simulation of various artificial neural network (ANN) algorithms, such as convolution neural network (CNN) and spiking neural network (SNN), were performed, demonstrating a linear increase in current accumulation with high recognition rates of 99.33 % and 86.46 %, respectively. This work provides a novel approach for overcoming the von Neumann bottleneck issue and emulating synaptic dynamics in various neural networks with high accuracy.

HfO2-based ferroelectrics are applied in a large spectrum of electronic devices ranging from ultralow-power logic to nonvolatile memory. The efficacy of these ferroelectrics is that these offer complementary metal oxide semiconductor compatibility in conjunction with large coercive fields and ferroelectricity at sub-10 nm thicknesses. Because of these advantages compared with conventional lead-based thick perovskite films (>50 nm), the present spotlight article focuses on their use to surpass the physical limit of the subthreshold swing (60 mV/dec at room temperature) of field-effect transistors (FETs) via the stabilization of the negative capacitance. In addition, the discussion on HfO2-ferroelectric-based memories is focused on two-terminal random-access devices, tunnel junctions, three-terminal ferroelectric FETs and their respective 3D stacked architectures.

An investigation of dielectric permittivity on the sintered high entropy oxide (HEO) capacitor composed of Co, Cr, Fe, Mn, and Ni (i.e., (CoCrFeMnNi)O) developed using solution combustion synthesis is performed. Stabilization of the phase in HEO is extremely important as it has a direct influence on the properties. In order to explore phase stabilization, in-depth studies of thermal, structural, morphological, and compositional analyses are carried out. The optimized processing parameters are further implemented on depositing (CoCrFeMnNi)O dielectric thin films followed by a thin film transistor. Irrespective of the reaction medium, the precursors undergo combustion at a low temperature below 250 degrees C, resulting in amorphous HEO. Upon crystallization at 500 degrees C, no secondary impurity oxides were detected and phase-stabilized to a spinel structure (Fd3m). A homogeneous distribution of all five cations without any segregation and a completely disordered occupancy of the cations were displayed by the bulk and thin films of HEOs. The spinel (CoCrFeMnNi)O exhibited high permittivity, with values approximately 7.3 x 102 (in bulk) and 3 x 101 (in a thin film), measured at 1 kHz owing to the entropy stabilization effect of HEO. Due to their high permittivity and low leakage current density (similar to 10-8 A/cm2), the (CoMnNiFeCr)O thin film was integrated into thin film transistors (TFTs) with molybdenum disulfide-channel. TFTs showed a field effect mobility of 8.8 cm2 V-1s-1, an on-off ratio of approximately 105, a threshold voltage of -1.5 V, and a subthreshold swing of 0.38 V/dec. The low voltage operation (<5 V) of these TFTs makes solution combustion-derived HEO (CoMnNiFeCr)O a potential candidate in microelectronics and optoelectronics applications.

The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, in the present study, large-grained (>100 nm) La-doped HfO2 (HLO) films are grown directly on silicon by adopting engineered water-diluted precursors with a minimum carbonaceous load and excellent shelf life. The o-phase stabilization is accomplished through a well-distributed La dopant, which generates uniformly populated oxygen vacancies, eliminating the need for oxygen-scavenging electrodes. These oxygen-deficient HLOs show a maximum remnant polarization of 37.6 μC/cm2 (2Pr) without wake-up and withstand large fields (>6.2 MV/cm). Furthermore, CSD-HLO in series with Al2O3 improves switching of MOSFETs (with an amorphous oxide channel) based on the negative capacitance effect. Thus, uniformly distributed oxygen vacancies serve as a standalone factor in stabilizing the o-phase, enabling efficient wake-up-free ferroelectricity without the need for nanostructuring, capping stresses, or oxygen-reactive electrodes.

While chemical solution deposition (CSD) has been successfully applied in various functional materials and devices, its potential for depositing new-age, lead-free HfO 2 -based ultrathin ferroelectrics and their device applications have yet to be demonstrated. In this study, we demonstrate the effectiveness of CSD in achieving high ferroelectric output in La-doped HfO 2 (HLO) directly on silicon. The CSD-HLOs exhibit a remarkable remanent polarization (2P r ) of approximately 37 μC/cm 2 and coercive field (E c ) of about 3.0 MV/cm. Furthermore, by stacking the CSD-HLOs with HfO 2 dielectric and tellurium (Te) p-type semiconducting channels, the resulting field-effect transistors (FETs) not only showed a four-fold improvement in switching characteristics but also reduced leakage currents. Upon passivation with Al 2 O 3 , the FETs demonstrated excellent stability against applied stress and exhibited good optical response under blue light via photogating.

Stainless steel (SS) is a well-known engineering material which is predominantly used in multitudinous applications; however, the disquieting entity is its deteriorative nature triggered by the corrosion in biological, chemical, and high-temperature surroundings. Zirconia is a noteworthy material because of its remarkable mechanical, thermal, and biocompatible properties. To further improve the properties, the high-temperature phases of zirconia are stabilized at room temperature. Zirconia and its stabilized derivates are favored candidates as protective coatings for SS. They offer high resistance, allow them to perform in corrosive, sensitive environments, and augment the longevity, serviceability of SS. Deposition of zirconia/stabilized-zirconia (Z/s-Z) coatings is accomplished using vapor-phase methods, which are capital-intensive; they comprise high vacuum and processing time, confined space, and more energy consumption, resulting in fabrication cost maximization. Alternatively, solution-phase deposition methods are advantageous, effortless, and capable of depositing on large-area substrates, promising to lessen fabrication costs and to enhance yield. Solution-phase methods, namely dip, spray, and spin coatings, have been investigated to produce effective, high-grade Z/s-Z coatings on SS. This review summarizes the utilized precursors, solvents, and process parameters for depositing Z/s-Z coatings on different types and grades of steel through mentioned solution-phase methods, respectively. The review emphasizes the researched potential applications of solution-phase processed Z/s-Z with a particular role as a protective coating on SS-based implants, surgical instruments preserving corrosion resistance, nontoxicity and biocompatibility in the body fluids. The review also highlights the defensive property of solution-phase processed Z/s-Z coatings to the underneath SS against corrosive chemical media (acids like H2SO4, HCl, HNO3; chlorides like NaCl and toxic gases like H2S, coal). The oxidation protection to the beneath SS by the mentioned coatings in aggressive high-temperature surroundings is also focused in the present review.

Transition-metal dichalcogenides possess high carrier mobility and can be scaled to sub-nanometer dimensions, making them viable alternative to Si electronics. WSe2 is capable of hole and electron carrier transport, making it a key component in CMOS logic circuits. However, since the p-type electrical performance of the WSe2-field effect transistor (FET) is still limited, various approaches are being investigated to circumvent this issue. Here, we formed a heterostructural multilayer WSe2 channel and solution-processed aluminum-doped zinc oxide (AZO) for compositional modification of WSe2 to obtain a device with excellent electrical properties. Supplying oxygen anions from AZO to the WSe2 channel eliminated subgap states through Se-deficiency healing, resulting in improved transport capacity. Se vacancies are known to cause mobility degradation due to scattering, which is mitigated through ionic compensation. Consequently, the hole mobility can reach high values, with a maximum of approximately 100 cm2/V s. Further, the transport behavior of the oxygen-doped WSe2-FET is systematically analyzed using density functional theory simulations and photoexcited charge collection spectroscopy measurements.

Two-dimensional (2D) materials are favorable candidates for resistive memories in high-density nanoelectronics owing to their ultrathin scaling and controllable interfacial characteristics. However, high processing temperatures and difficulties in mechanical transfer are intriguing challenges associated with their implementation in large areas with crossbar architecture. A high processing temperature may damage the electrical functionalities of the bottom electrode, and mechanical transfer of 2D materials may introduce undesirable microscopic defects and macroscopic discontinuities. In this study, an in situ fabrication of an electrode and 2D-molybdenum diselenide (MoSe2) is reported. The controlled diffusion of selenium (Se) in the predeposited molybdenum (Mo) produces Mo//Mo:Se stacks with a few layers of MoSe2 on top and MoSex on the bottom. Diffusion-assisted Mo//Mo:Se fabrication is observed over a large area (4 in. wafer). Additionally, a 5 × 5 array of crossbar memristors (Mo//Mo:Se//Ag) is fabricated using the diffusion of Se in patterned Mo. These memristors exhibit a small switching voltage (∼1.1 V), high endurance (>250 cycles), and excellent retention (>15 000 s) with minimum cycle-to-cycle and device-to-device variation. Thus, the proposed nondestructive in situ technique not only simplifies the fabrication but also minimizes the number of required stages.

Recent advances in anticounterfeiting technology highlight the importance of functional materials with innovative processing methods for achieving robust anticounterfeiting tags. Here, we report a fabrication approach that enables the formation of randomly oriented MoS x or MoO x clusters of unpredictable shapes for use as anticounterfeiting tags. We exploit the combined effects of capillary and Marangoni flows to drive solute in a pre-deposited wet film that produces random clusters, creating tags. The reading of these tags is achieved using high-speed confocal laser microscopy, which allows for the extraction of complex topographies in seconds. The digitization of the tags involves converting height profiles into grayscale images, followed by the application of mathematical tools and the von Neumann debiasing technique. The extracted keys are subjected to the NIST statistical test, which consists of six tests to confirm the randomness of the generated keys. The recent advancements in anticounterfeiting technology highlight the importance of functional materials with innovative processing methods to achieve robust anticounterfeiting tags.

Molybdenum disulfide (MoS2) synthesis methods have become diverse and enable wafer‐scale growth for high‐performance optoelectronic applications. However, there has been limited research on the carrier transports of wafer‐scale deposited MoS2 thin‐film transistors (TFTs). In this paper, the first demonstration of the electron transport mechanism in top‐gated polycrystalline crystalline MoS2 (poly‐MoS2) TFTs grown by a wafer‐scale deposition method is presented. The MoS2 is synthesized via radio frequency (RF) magnetron sputtering and gas flow chemical vapor sulfurization. A surface analysis is performed to determine the basic ingredients and grain size of the grown MoS2. Furthermore, the electrical properties and charge transport behaviors of the poly‐MoS2 TFTs are characterized using current–voltage measurement at low temperatures (93–273 K). The extracted parameters (e.g., field‐effect mobility, contact and channel resistance, activation energy, and hopping distance) and 2D Mott variable range hopping (VRH) of the poly‐MoS2 TFTs support the notion that the primary mechanism of carrier transport in the poly‐MoS2 TFTs involves thermally active hopping and grain effects. For advanced poly‐MoS2‐based devices, an increase of grain size will be the principal factor using the relationship between the grain size and electron hopping distance of poly‐MoS2.