This presentation describes various revolutionary process and packaging technologies on the horizon that will (i) extend Moore's Law scaling through and beyond the next decade and (ii) enable many new, exciting integrated circuit opportunities and functions for future products. By using these new and exciting technologies holistically, and coupled with technology and design co-optimization, the future of Moore's Law is brighter than ever.

In the world of Integrated Circuits, Complementary Metal–Oxide–Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET, Nano tubes, Nano wires etc. In this work, the basic gates and memory circuits like DRAM are modeled in HSPICE software using CMOS structure and FinFET structures are analyzed and their performances like standby power Consumption and static noise margin are compared. Also a low power and robust DRAM cells based on FinFET has been proposed for 32nm technology.

We have fabricated LG=90nm high-K dielectric enhancement-mode (e-mode) GaN MOS-HEMT which shows low IOFF=70nA/μm (VD=3.5V, VG=0V), low RON=490Ω-μm, high ID,max=1.4mA/μm, and excellent power-added efficiency (PAE) of 80% at RF output power density (RF Pout) of 0.55W/mm (VD=3.5V, f=2.0GHz). These results represent (i) >3.6X lower RON at equivalent breakdown voltage (BVD) than industry-standard Si voltage regulator (VR) transistors, and (ii) >10% better PAE at matched RF Pout or >50% higher RF Pout at matched PAE than industry-standard GaAs RF power amplifier (PA) transistors, all at mobile SoC-compatible voltages. These results make GaN MOS-HEMTs attractive for realizing energy-efficient, compact voltage regulators and RF power amplifiers for mobile SoC. This work shows, for the first time, that the application space of GaN electronics can be expanded beyond the existing high-voltage power and RF electronics (e.g. automobile, power conversion, base-station, radar) to include low-power mobile SoCs.