We present an SOI-waveguide coupled germanium photodiode with very high OE -3 dB bandwidth of ≥110 GHz at reverse bias of 2 V. This performance is achieved by a novel construction in that the germanium is sandwiched in between two in-situ doped silicon regions. This fabrication approach allows for avoiding ion-implantation into the germanium, which is certainly beneficial for the bandwidth as minority carrier diffusion effects are strongly suppressed. A responsivity of >0.6 A/W at 1550 nm (-2 V) is achieved, while the dark current of this device yields to about 300 nA (-2 V). To our knowledge, this is the most advanced germanium photo detector in terms of bandwidth combined with state-of-the-art responsivity as well as moderate dark currents. We demonstrate that the novel photodiodes can be fabricated with high yield.

A Ge photodiode, directly coupled to a silicon nitride waveguide, showing more than 67 GHz bandwidth is demonstrated for the first time, which paves the way for utterly new SiN waveguide platform based applications. By light feeding through SiN waveguides, the new photodiode can also be a key enabler for a bulk-Si based, monolithically integrated electronic-photonic integrated circuit platform. We show that the new devices, fabricated on bulk-Si, provide the same bandwidths as Si waveguide coupled SOI based reference Ge photodiodes. However, their O-band responsivity is 0.3 A/W, which is about three times lower compared to the SOI wave guide coupled devices. We attribute this effect to substrate losses and few specific layout features but see some potential for improvement by design and technological optimizations. We demonstrate that the diodes can be fabricated with high yield and low metrics tolerances.

An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.

We investigate design effects on the opto-electrical frequency response of waveguide-coupled, lateral Ge p-i-n photodiodes to estimate the sensitivity of this response to diode fabrication tolerances and, in particular, to improve our understanding how diffusion of photo carriers acts on the response behavior.

An experimental SiGe HBT technology featuring f(T)/f(max)/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CIVIL ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.

This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with f T of 250 GHz and f max of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineon's 130 nm process resulting in an f max of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an f max of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.

An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with fT/fmax values of 240/290 GHz.

Photoreceivers suitable for 100 Gb/s data rates are presented, consisting either of monolithic pin-diodes with travelling-wave amplifiers followed by a copackaged DEMUX, or 90° optical hybrids integrated with balanced detectors forming coherent QPSK photoreceiver OEICs.

A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (fT=240 GHz, fmax=330 GHz, BVCEO=1.7 V) along with high-voltage HBTs (fT=50 GHz, fmax=130 GHz, BVCEO=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

A Sub-THz transmitter module based on a micro-pinantenna chip and a silicon lens for focusing RF radiation is presented. The radiated power of the module is up to -13.5 dBm and exhibits a power radiation of 1 μW at 200 GHz and higher. Keywords-waveguide integrated micro-pin photodiode; monolithic antenna; sub-THz; heterodyne signal generation and detection

Monolithically integrated InP-based photoreceivers, either comprising pin-diodes with travelling-wave amplifiers for electrical post amplification or 90° hybrids integrated with a pair of balanced detectors forming coherent QPSK photoreceivers, are presented for 100 GbE transmission concepts.

Implementation of interdigital electrodes and etching isolating trenches has improved InGaAs/InAlAs photoconductive antennas. The signal-to-noise ratio of continuous wave systems at 1.5 μm has been increased up to 80 dB and its operation range up to 2.1 THz.

An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°-35° C, offering low PDL <;1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.

A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.

A DPSK receiver using a flip-chip hybrid of InP photodetectors on SOI boards with waveguide delay line interferometer and SOA preamplifier on SOI boards are developed. The horizontal waveguide integration enables bandwidths exceeding 40 GHz.

The contact performance of seed-layer printed, fired and plated (SFP) contacts were studied on solar cells with different emitter sheet resistivities. For the seed layer of the SFP-contacts a special metal ink called SISC (seed layer ink for the metallization of solar cells), developed and fabricated at Fraunhofer ISE to contact lowly doped emitters was used. The doping profile and the surface concentration of active phosphorus are determined by secondary ion mass spectroscopy (SIMS) and by electrochemical capacitance voltage (ECV) measurements. Large-area Cz-silicon solar cells 12.5 × 12.5 cm 2 were fabricated with sheet resistivities between 40 ¿/sq. and 130 ¿/sq. The cells are metalized with SFP-contacts and conventional screen print contacts for comparison. High fill factors above 79% on solar cells with lowly doped emitters (sheet resistance of 130 ¿/sq.) could be achieved with SFP-contacts. In contrast, for screen-printed contacts using standard Ag paste the FFs for such lowly doped emitters are reduced to values around 55%. The difference in contact formation is explained by contact resistance measurements together with images from the metal semiconductor junction. Using the SISC ink solar cells with 45 ¿m wide contact structures were processed on a high efficiency cell structure with a passivated rear surface and a 110 ¿/sq. emitter a FF of 81% was achieved resulting in a cell efficiency of ¿=20.6%.

A monolithically integrated InP 90 degrees hybrid with waveguide pin-photodiodes is presented. Stable performance was achieved over a wavelength range from 1520 nm to 1570 nm and a temperature range from 0 degrees C to 75 degrees C. (C) 2009 Optical Society of America

A fiber-assembled CW THz System operating at 1.5 mu m is presented. High speed telecom photodiodes integrated with planar THz antennas serve as THz emitters with power up to 10 mu W. Photoconductive antennas based on LT InGaAs/InAlAs multi-layer structures allow coherent detection. The system operates in a wide frequency range of 0.1-1.6 THz. (C) 2009 Optical Society of America

A fiber-assembled CW THz System operating at 1.5 microm is presented. High speed telecom photodiodes integrated with planar THz antennas serve as THz emitters with power up to 10 microW. Photoconductive antennas based on LT InGaAs/InAlAs multi-layer structures allow coherent detection. The system operates in a wide frequency range of 0.1 -1.6 THz.