The instability of transition metal sulfides (TMSs) electrocatalysts poses challenges in seawater splitting, particularly in the oxygen evolution reaction (OER). Lattice strain is an effective strategy to enhance the performance of TMSs. In this work, a lattice-strained Ni3S2 (NiFeCoS-LS) was synthesized via a facile roomtemperature strategy, where the effective incorporation of Fe and Co induces substantial lattice strain that significantly improves the resistance to Cl--induced corrosion during alkaline seawater oxidation. As a result, the NiFeCoS-LS catalyst exhibits exceptional long-term stability, maintaining stable performance for over 300 h at a current density of 0.5 A cm-2 in alkaline seawater electrolysis. In contrast, the hydrothermally synthesized NiFeCoS (NiFeCoS-HT), which lacks lattice strain, exhibits significantly reduced stability. The enhanced performance arises from the improved thermodynamic stability of Ni3S2 induced by lattice strain, which reinforces its structural robustness under operating conditions. Supported by theoretical calculations, the reconstruction and corrosion resistance behavior of NiFeCoS-LS were further elucidated. This work provides mechanistic insights into designing corrosion-resistant TMS-based electrocatalysts for effective seawater electrolysis.

Boron arsenide, renowned for its ambipolar charge mobility and superior thermal conductivity, has emerged as a focal point of contemporary research. Despite its promising properties, the impact of water on the electronic conductivity (EC) of boron arsenide remains largely unexplored. In this study, we synthesized amorphous boron arsenide (a-BAs) nanosheets through an innovative in situ reaction involving elemental arsenic and sodium borohydride within a low-pressure, hydrogen-rich environment. We performed both theoretical and experimental analyses to investigate the influence of water on EC in representative a-BAs. These nanosheets were integrated into self-powered, flexible humidity sensors, demonstrating a substantial current change across nearly five orders of magnitude and achieving an extraordinary response of 8.4 & times; 106% at 85% RH without an additional power unit. The sensors exhibited a remarkable linear correlation between the logarithmic response function and a wideranging detection capability (11%-97% RH), achieving an extraordinary response of 1.4 & times; 106% at 97% RH under a 1 V bias. This research not only introduces a straightforward synthesis method for amorphous boron arsenide nanosheets but also highlights the significant impact of water on the EC of boron arsenide, paving the way for developing self-powered highperformance sensing materials.

The intrinsically weak optical absorption and limited photocarrier separation of atomically thin two-dimensional (2D) materials often limit the photodetector performance. Here, we report an in situ surface growth strategy for preparing a Bi2O2Se/Te heterojunction via a low-temperature chemical vapor deposition method. One-dimensional Te nanowires directly grow on 2D Bi2O2Se nanosheets, forming a clean van der Waals interface and enhancing optical absorption capacity. The Bi2O2Se/Te heterostructure exhibits excellent optoelectronic performance, including an enhanced photocurrent of 1.12 mu A, a high responsivity of 50 A/W, and a fast response speed of 32/>168 ms. The enhanced photocurrent and responsivity arise from the efficient electron injection from Te to Bi2O2Se, and hole trapping at the heterointerface. This work demonstrates a non-destructive approach for preparing high-quality heterojunctions and provides an effective pathway for next-generation high-performance near-infrared photodetectors.

The hydrazine oxidation reaction (HzOR) offers a promising alternative to mitigate the high energy demands associated with the kinetically sluggish oxygen evolution reaction. Consequently, developing an efficient electrocatalyst for HzOR is crucial. In this study, we present a highly effective Co3O4-FeOOH heterojunction designed to enhance hydrazine-assisted water splitting performance. Various characterization techniques were employed to analyze the structures and compositions of the catalyst. Evaluations of its electrocatalytic performance revealed exceptional catalytic activity during hydrazine electrolysis, achieving a current density of 100 mA cm-2 with a minimal negative potential of -17.2 mV (vs. RHE). The system exhibited impressive stability, maintaining consistent performance for over 100 h during HzOR. Notably, the heterostructure electrocatalyst demonstrated outstanding performance and stability in simulated seawater, requiring only -70 mV (vs.RHE) to deliver a current density of 100 mA cm- 2 and remaining stable after the durability test. The electrocatalyst also performed well in harsh environments, including brine and highly alkaline environments. These findings highlight the potential of the Co3O4-FeOOH heterostructure electrocatalyst for energy-efficient hydrogen production and pollutant degradation.

Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called 'induced fit growth', inspired by the induced fit theory in molecular biology. This method overcomes the limitations of current techniques by enabling the deposition of Ga-based semiconductor films, including GaSb, GaSe, GaAs, and GaAsSb, with controllable thickness and morphology on arbitrary substrates. Utilizing a low-cost, wafer-scale vapor deposition process compatible with standard semiconductor procedures, these Ga-based films can be patterned for various functional applications. For example, the patterned Ga-based thin films exhibit broad applicability in p-channel transistor arrays (with hole mobility of 0.25 cm2 V⁻1 s⁻1), functional synaptic devices, and flexible omnidirectional imaging sensors (maintaining functionality at incident angles as low as 5°). Overall, the proposed induced fit growth method facilitates the growth of Ga-based semiconductor films with greater integration flexibility, enhancing their advanced functionality and broad applicability.

The synthesis of high-entropy alloy nanoparticles (HEA-NPs) has traditionally been guided by thermodynamic considerations, relying on static parameter optimization. Here, we introduce a kinetically controlled paradigm for directing nanofluid transport to craft strained HEA-NPs from ten dissimilar elements. This strategy employs Zn as an active propellant, constructing interconnected nanochannels that steer multimetal nanofluid flow and trigger alloying. Using in situ transmission electron microscopy, we directly observe the dynamics of long-range directional migration under nanoconfinement, which induces forced fusion and fission events pivotal for achieving homogeneous mixing and size control. These unique confinement dynamics further impart surface tensile strain to the resulting nanoparticles. When applied to electrocatalytic nitrate-to-ammonia conversion, the strained HEA-NPs achieve an exceptional Faradaic efficiency of 94.8 ± 4.34% and sustain stable operation for over 720 h. Mechanistic studies attribute this performance to the synergy between multielement active sites and the tailored surface strain, which collectively optimize intermediate adsorption. This work establishes a new design principle for complex nanomaterials by shifting the perspective from static thermodynamics to dynamic kinetic control, providing a scalable pathway for the development of advanced electrocatalysts.

Local geometric constraints have a substantial influence on electronic structure renormalization, offering a promising approach to enhance single-atom catalysts (SACs) beyond traditional limits. Conventional SACs typically feature planar-confined sites, but three-dimensional configurations remain underexplored. This study introduces a "curvature-programming" strategy to drive electrochemical nitrate reduction by assembling FeCu dual single-atom protrusions on molybdenum carbide quantum dots (FeCu/MoCx-5 QDs). The high-curvature QDs and protruding geometries mimic active vertex sites, enhancing electric fields to polarize N─O bonds. This delivers nearly 100% NH3 Faradaic efficiency over a wide potential window (-0.1 to -0.4 V versus reversible hydrogen electrode), with an ultralow overpotential (300 mV) and energy consumption (7.52 Wh gNH3-1 mgcat-1). FeCu/MoCx-5 effectively reduces nitrate levels in wastewater, producing scalable (NH4)2SO4, thus integrating environmental remediation with renewable energy storage. This work provides a promising strategy for developing SACs for broader energy applications.

The growing need for cost-effective and efficient energy conversion technologies drives the development of advanced catalysts for the oxygen evolution reaction (OER). Our research focuses on high-entropy spinel oxides (HESOs) as efficient OER electrocatalysts. Using the molten salt synthesis (MSS) method, we prepared HESO nanoparticles from Fe, Ni, Co, Mn, and Zn. By adjusting the precursor ratios, we obtained equimolar (Ni0.2Fe0.2Co0.2Mn0.2Zn0.2)3O4, CoMn-rich, and NiFe-rich samples to examine compositional effects. Among these, the CoMn-rich HESO sample exhibited superior catalytic performance in 1 M KOH solution, with an overpotential of 330.1 mV at 10 mA cm-2 and a Tafel slope of 53.5 mV dec-1. Its promising long-term stability and enhanced reaction kinetics are significant. The synergistic effect of Co and Mn with high valence states and enhanced oxygen adsorption on the CoMn-rich HESO lower the energy barrier and accelerate electron transfer, improving the reaction kinetics. Density functional theory (DFT) calculations further reveal the relationship between orbital hybridization and catalytic performance, emphasizing the contribution of high valence metal active centers in improving performance. The density of states (DOS) analysis further demonstrates the stronger covalency between the 3d orbitals of the metal active site and the O 2p orbitals on the surface of CoMn-rich samples, which favors the absorption of oxygen species and thus improves the electrochemical performance. This work presents an effective method for HESO synthesis and opens new avenues for energy conversion research.

Maximizing metal-substrate interactions by self-reconstruction of coadjutant metastable phases can be a delicate strategy to obtain robust and efficient high-density single-atom catalysts. Here, we prepare high-density iridium atoms embedded ultrathin CoCeOOH nanosheets (CoCe-O-IrSA) by the electrochemistry-initiated synchronous evolution between metastable iridium intermediates and symmetry-breaking CoCe(OH)2 substrates. The CoCe-O-IrSA delivers an overpotential of 187 mV at 100 mA cm−2 and a steady lifespan of 1000 h at 500 mA cm−2 for oxygen evolution reaction. Furthermore, the CoCe-O-IrSA is applied as a robust anode in an anion-exchange-membrane water electrolysis cell for seawater splitting at 500 mA cm−2 for 150 h. Operando experimental and theoretical calculation results demonstrate that the reconstructed thermodynamically stable iridium single atoms act as highly active sites by regulating charge redistribution with strongly p-d-f orbital couplings, enabling electron transfer facilitated, the adsorption energies of intermediates optimized, and the surface reactivity of Co/Ce sites activated, leading to high oxygen evolution performance. These results open up an approach for engineering metastable phases to realize stable single-atom systems under ambient conditions toward efficient energy-conversion applications. Maximizing metal-substrate interactions through self-reconstruction is a key strategy for efficient oxygen evolution catalysts. Here, the authors report high-density iridium atoms embedded in ultrathin oxyhydroxide nanosheets, showing high performance in the oxygen evolution reaction.

In this study, FeNi alloy/carbon composites were synthesized using the LiCl-KCl molten-salt-assisted method at different temperatures. Electrochemical tests demonstrate that FeNi/carbon synthesized at 1,000 degrees C exhibits the best oxygen evolution reaction performance, with an overpotential of 306.7 mV at a current density of 10 mA cm-2 and excellent long-term stability over 100 h. A series of characterizations reveals that the improved activity is attributed to the synergistic effects of the conductive and porous carbon framework, the well-grown FeNi alloy nanoparticles, and optimized surface electronic states that derive from the increasing calcination temperature.

Van der Waals (vdWs) p-n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high-quality p-type 2D semiconductors, especially patterned p-type channels, remains a major challenge for progress in the field. Here, a precise substitutional doping strategy for 2D semiconductors is presented, enabling the production of millimeter-scale WS2 single-crystal thin films with tailored p-type and n-type properties. This advancement supports the fabrication of high-performance WS2-based p-type and n-type field-effect transistor (FET) miniaturized arrays with near-ohmic contact. Building on this progress, a WS2 van der Waals homojunction p-n array demonstrating distinct anti-ambipolar behavior and excellent rectification characteristics is developed. In self-powered photodetection mode, leveraging the strong coupling of the vdWs homojunction interface, the device achieves an exceptional photovoltaic effect with a high specific detectivity of 3.4 x 1010 Jones and a fast response time of 400 mu s. The development of WS2 p-n homojunction arrays presents immense potential for advancing next-generation logic electronics and optoelectronic devices, opening new avenues for large-scale industrial applications.

Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices.

Flexible, highly sensitive strain sensors operating at small strains have shown significant potential in applications such as pulsebeat detection and sound signal acquisition. In this study, we introduce ultrasensitive piezoresistive strain sensors designed to function effectively at small strains using a Te nanomesh. A large-area Te nanomesh is deposited onto a flexible polyimide substrate through physical vapor deposition, facilitating the on-site fabrication of strain sensors. The unique mesh structure imparts exceptional sensitivity to strain, achieving a remarkable gauge factor of up to 9.93 x 108. By coating the strain sensors with a thin layer of polydimethylsiloxane, we significantly enhance their stability, with minimal degradation observed even after 1000 loading-releasing cycles. The performance of these strain sensors is contingent on the mesh's density, which can be precisely controlled by adjusting the growth time of the Te nanomesh. Furthermore, our strain sensor exhibits a rapid response time of less than 4 ms, indicating its swift responsiveness. To demonstrate the superior performance of these strain sensors, we showcase their efficacy in monitoring finger bending, ruler vibrations, and sphygmus. Our findings introduce a novel design concept for flexible strain sensors and represent a significant advancement in wearable electronics and human-machine interaction technologies.

Nickel-iron-based sulfides have recently attracted considerable attention as promising candidates for water oxidation. However, the high concentration of chloride ions (Cl-) in seawater poses a major challenge, as they readily corrode active sites and significantly compromise long-term durability. Most nickel-iron-based sulfides suffer from poor stability under these conditions, particularly at high current densities, which greatly hinders their practical application in large-scale seawater electrolysis. In this study, an innovative iron and cobalt co-doped nickel sulfide (NiFeCoS) electrode is introduced, produced via a simple fabrication method, which effectively protects the active sites from Cl- attack during alkaline seawater oxidation, even under high current densities. The NiFeCoS catalyst exhibits remarkable stability, maintaining stable performance for over 148 h at a current density of 1 A cm-2 in alkaline seawater electrolytes. In an alkaline electrolyte, it achieves low overpotentials of 261, 312, and 342 mV to reach current densities of 100, 500, and 1000 mA cm-2. This research presents a novel approach for constructing NiFeCoS electrodes through a straightforward two-step synthesis process, offering a promising and efficient strategy for large-scale hydrogen production via seawater electrolysis.

The growing need for energy conversion technologies has stimulated the development of innovative electrocatalysts designed explicitly for oxygen evolution reactions (OER). Nonprecious metal/carbon-based composites are widely studied for this purpose due to their low cost and unique structures. However, conventional methods for preparing transition metal/carbon composites are often cumbersome and time-consuming. These methods have other disadvantages, such as poor catalyst uniformity, limited potential for surface modification, and excessive oxidation of metal particles. In this work, we employed a simple one-step molten salt (MS) method to synthesize FeNi alloy/carbon composites. The sample prepared by the MS strategy, with an optimal Fe/Ni ratio, performs a low overpotential of 279.4 mV at a current density of 10 mA cm-2 and a small Tafel slope of 45.7 mV dec-1. Compared with the sample prepared through traditional pyrolysis, the sample prepared by the MS method demonstrates modulated and optimized surface characteristics for both the carbon support and metallic particles. Furthermore, the synthetic process enables the uniform growth of alloy particles on the carbon substrate. These structural improvements result in abundant defects and active sites, significantly enhancing OER activity. Overall, this work highlights the role of the MS method in promoting the catalytic activity of FeNi alloy/carbon composites. This research contributes to advancing non-noble metal electrocatalysts for future catalytic applications.

Microenvironment modulation, involving the selective adsorption of ions and the engineering of hydrogen radicals, is critical for the neutral electrochemical reduction of nitrate to ammonia at high current densities. In this work, self‐adaptive low‐valent indium single atoms SAs decorated copper‐based nanosheets were investigated as a prototype. The catalyst exhibits a maximum ammonia Faradaic efficiency (FE NH3 ) of 99.36% and a high NH 3 yield rate of 29.02 mg h −1 mg cat. −1 in neutral electrolyte. In‐depth experiments and theoretical calculations suggest that the indium SAs optimize the local electronic distribution of the derived Cu matrix through strong p‐d orbital couplings, with the electron‐relay effect, thereby enhancing electron transfer and regulating the supply of hydrogen radicals to accelerate the hydrogenation process. Furthermore, in situ Raman results and molecular dynamics simulations reveal that the indium SAs can act as solid‐state buffering sites by inducing a potential‐dependent adsorption behavior of NO 3 − over SO 4 2− as a supporting oxoanion in the electric double layer, consequently maintaining high reaction activity and selectivity. Herein, the as‐designed electrode operates stably at 200 mA cm −2 for 150 h in a bipolar membrane electrode assembly electrolyzer with a FE NH3 of ∼83%, indicating promising practical applications.

Perovskites have emerged as a promising new generation of photovoltaic conversion materials, gradually surpassing traditional silicon-based materials in solar cell research. This development is primarily due to their superior power-conversion efficiency (PCE), simple fabrication process, and cost-effective production. However, the low stability of perovskite ionic crystals poses a significant challenge to their stability, hindering the progress of perovskite materials and devices. Although two-dimensional (2D) perovskites offer improved stability, adding organic amine ions results in a quantum confinement effect that reduces the optoelectronic performance of devices. To counter this issue, the strategic design of suitable spacer cations offers a potential solution. Aromatic amine ions possess greater polarity and structural adjustability compared to aliphatic amine ions, making them advantageous in mitigating the quantum confinement effect. This review focuses on phenylethylammonium (PEA) as a representative aromatic spacer cation. It categorizes the evolution of these cations into four trajectories: alkyl chain modification, substitution of hydrogen atoms on the aromatic ring with specific substituents, replacement of benzene rings with aromatic heterocycles, and utilization of multiple aromatic rings instead of a monoaromatic ring. The structure, properties, and corresponding device performance of aromatic spacer cations utilized in reported 2D perovskites are discussed, followed by the presentation of a series of factors for selecting and designing aromatic amine ions for future development.

AbstractInorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 10(5). Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.