The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.

We present the electrostatic control of photoluminescence of monolayer MoS$_2$ at room temperature via integration of free-standing BaTiO$_3$ (BTO), a ferroelectric perovskite oxide, layers. We show that the use of BTO leads to highly tunable exciton emission of MoS$_2$ in a minimal range of gate voltages, effectively controlling the neutral excitons to charged excitons (trions) conversion. Due to BTO's ferroelectric polarization-induced doping we observe large peak emission shifts as well as a large and tunable A trion binding energy in the range of 40-100 meV. To further investigate the efficacy of electrostatic control, we compared our measurements with those carried out when the BTO is replaced by a hexagonal boron nitride (hBN) dielectric layer of comparable thickness, confirming BTO's superior gating properties and thus lower power consumption. Additionally, we take advantage of the ferroelectric switching of BTO by fabricating devices where the BTO layer is decoupled from the gate electrode with a SiO$_2$ layer. Choosing to isolate the BTO allows us to induce large remanent behavior of MoS$_2$'s excitonic features, observing hysteretic behavior in the peak energy ratio between A exciton and its trion, as well as hysteretic behavior in the doping-related trion energy shift. This study illustrates the rich physics involved in combining free-standing complex oxide layers with two-dimensional materials.

Integrating free-standing complex oxides with two-dimensional (2D) materials has recently attracted great interest, due to the rich physics evolving from such structures. Enhancing and tuning the opto-electronic properties of these systems is of high importance for a multitude of applications, such as sensors, memory devices or optical communications. The electrostatic control of photoluminescence of monolayer MoS2 at room temperature via integration of free-standing BaTiO3 (BTO), a ferroelectric perovskite oxide is presented. It is shown that the use of BTO leads to highly tunable exciton emission of MoS2 in a minimal range of gate voltages. Due to BTO's ferroelectric polarization-induced doping, large peak emission shifts as well as a large and tunable A trion binding energy in the range of 40-100 meV are observed. These measurements are compared with those carried out when the BTO is replaced by a hexagonal boron nitride (hBN) dielectric layer, confirming BTO's superior gating properties and thus lower power consumption. Additionally, advantage of the ferroelectric switching of BTO is taken by fabricating devices where the BTO layer is decoupled from the gate electrode with a SiO2 layer. Choosing to isolate the BTO allows to induce large remanent behavior of MoS2's excitonic features.

This work investigates the vibrational and electrical properties of molybdenum trioxide (α-MoO 3 ) upon tensile strain applied along different crystal directions. Using a three-point bending setup in combination with Raman spectroscopy, we report measurements of a blueshift of the Raman modes when uniaxial tensile strain is applied along the a - and c -axis to this material. Furthermore, the electrical measurements reveal an increase in resistance with strain applied along both in-plane directions. The findings from the uniaxial strain and Raman spectroscopy measurements are further confirmed by ab-initio calculations. This study provides valuable insights into the mechanical and vibrational properties of α-MoO 3 and its potential use in several applications. This study contributes to the growing body of knowledge on the properties of α-MoO 3 and lays the foundation for further exploration of its potential applications. Given MoO 3 holding the natural hyperbolic phonon polaritons, attracting significant research interest, this study has the potential to arouse the curiosity of the scientific community.

We report on outstanding photo-responsivity, R > 10 3 A/W, fast response (~0.1 s), and broadband sensitivity ranging from the UV to the NIR in two terminal graphene/MoS 2 photodetectors. Our devices are based on the deterministic transfer of MoS 2 on top of directly grown graphene on sapphire, and their performance outperforms previous similar photodetectors using large-scale grown graphene. Here we devise a protocol for the direct growth of transparent (transmittance, Tr > 90%), highly conductive (sheet resistance, R □ < 1 kΩ) uniform and continuous graphene films on sapphire at 700 °C by using plasma-assisted chemical vapor deposition (CVD) with C 2 H 2 /H 2 gas mixtures. Our study demonstrates the successful use of plasma-assisted low-temperature CVD techniques to directly grow graphene on insulators for optoelectronic applications.

Rhenium disulfide (ReS2) is a semiconducting two-dimensional material with marked in-plane structural anisotropy. This lattice anisotropy is the stem of many quasi-1D properties observed in this material. In this work, we focus on strain engineering of optical and vibrational properties through mechanical deformations of the lattice. In particular, the exciton energy can be shifted by applying uniaxial strain, and the gauge factor is six times more pronounced when the strain is applied along the b-axis than in perpendicular to the b-axis of the ReS2 lattice. Moreover, we also observed how the two most prominent Raman modes can be shifted by uniaxial strain, and the shift strongly depends on the alignment between the uniaxial strain direction and the a- and b-axes of the ReS2 lattice.

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.

Strain Engineering In article number 2103571, Roberto D'Agosta, Andres Castellanos-Gomez, and co-workers report a method to apply uniaxial strain along different crystal orientations and apply the method to study the strain-tunability of excitons in zirconium triselenide, a 2D semiconductor with an interesting in-plane anisotropic crystal structure.

Single-layer MoS2 produced by mechanical exfoliation is usually connected to thicker and multilayer regions. We show a facile laser trimming method to insulate single-layer MoS2 regions from thicker ones. We demonstrate, through electrical characterization, that the laser trimming method can be used to pattern single-layer MoS2 channels with regular geometry and electrically disconnected from the thicker areas. Scanning photocurrent microscope further confirms that in the as-deposited flake (connected to a multilayer area) most of the photocurrent is being generated in the thicker flake region. After laser trimming, scanning photocurrent microscopy shows how only the single-layer MoS2 region contributes to the photocurrent generation. The presented method is a direct-write and lithography-free (no need of resist or wet chemicals) alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS2 and similar two-dimensional materials.

Finding 2D and thin‐film layered materials have become essential to develop not only in scientific‐related fields, but also in a wide industry, which is constantly feeding from this progress. For electronic devices, thin‐film materials are supposed to be a step forward to overcome Moore's law. In many other technologic areas, the development of tools based on flakes of materials has found new physics, becoming a rising field. Although, destructive techniques are commonly used to characterize the thickness of these materials. Herein, a list of materials is presented, whose thicknesses are characterized by their apparent colors in several substrates, a harmless, fast, and reliable technique that has been already used to determine the number of layers in several works. This list is also enlarged with other materials and substrates.

Molybdenum trioxide (MoO 3 ) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance measurements, using polarized light, to determine the angular dependence of the refractive index of thin MoO 3 flakes and we study the directional dependence of the MoO 3 Young’s modulus using the buckling metrology method. We found that MoO 3 displays one of the largest in-plane anisotropic mechanical properties reported for 2D materials so far.

The effect of uniaxial strain on the band structure of ZrSe3 , a semiconducting material with a marked in-plane structural anisotropy, is studied. By using a modified three-point bending test apparatus, thin ZrSe3 flakes are subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra show excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ≈60-95 meV %-1 , while along the a-axis, the shift only reaches ≈0-15 meV %-1 . Ab initio calculations are conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe3 , exhibiting a remarkable agreement with the experimental results.

We have implemented three different optical methods to quantitatively assess the thickness of thin GaSe flakes transferred on both transparent substrates, like Gel-Film, and SiO2/Si substrates. We show how their apparent color can be an efficient way to make a quick, rough estimation of the thickness of the flakes. This method is more effective for SiO2/Si substrates as the thickness-dependent color change is more pronounced on these substrates than on transparent substrates. On the other hand, for transparent substrates, the transmittance of the flakes in the blue region of the visible spectrum can be used to estimate the thickness. We find that the transmittance of flakes in the blue part of the spectrum decreases at a rate of 1.2%/nm. On SiO2/Si, the thickness of the flakes can be accurately determined by fitting optical contrast spectra to a Fresnel law-based model. Finally, we also show how the quantitative analysis of transmission mode optical microscopy images can be a powerful method to quickly probe the environmental degradation of GaSe flakes exposed to aging conditions.

Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate.

Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO3 flakes on SiO2/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of ±3 nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with ±2 nm of uncertainty.

During the past decade, due to their large number of technological applications, a large number of research studies have been devoted to CdSe nanocrystal (NC) systems. Most of the studies of NC grown on substrates present in the literature correspond to a submonolayer coverage. However, interparticle interactions and, consequently, system morphology and its properties can change at higher coverage regime. We combine the X-ray diffraction technique at wide and small angle range with direct space AFM microscopy for the morphological characterization of samples in the monolayer vicinity. We conclude that the CdSe preserves its nanoparticle character and its pyramid shape. This nanoparticle character is also reflected in the CdSe Density Of States (DOS) measured by UPS. We have shown that the particle CdSe atoms are perfectly ordered. They form nanocrystals with a wurtzite structure, grown with an axial and lateral matching with the HOPG substrate lattice in a hexagonal arrangement up to the monolayer coverage, with a strong interaction with the substrate. Above the monolayer coverage this epitaxial match is looser, resulting in a 3D disorder growth.