提出了一种具有高介电常数介质填充沟槽的绝缘栅双极晶体管(IGBT).分析了高介电常数介质调制效应.结果表明,与普通场阻型IGBT相比,该器件的击穿电压提高了 8％,通态压降减小了 8％,关断损耗降低了 11％;在相同通态压降下,该器件的关断损耗降低了 35％.在栅极与原HK介质之间增加介电常数更高的介质,进一步提升了该IGBT的性能.与普通场阻型IGBT相比,在相同击穿电压与通态压降下,改进器件的关断损耗降低了 57％.

提出了一种含介质深槽的横向p沟道功率MOSFET (p-MOSFET).深槽内填充了线性组合的高介电常数(high-k)介质和二氧化硅,以调变寄生的深槽电容(CDT),使CDT充电电荷增大且使该充电电荷沿纵向接近均匀分布.在深槽一侧,通过提高p型漂移区剂量来提供负极板充电电荷,在深槽另一侧,通过增设n型区来提供正极板充电电荷.两侧漂移区的电荷补偿效应均得到增强,器件性能获得提高.仿真结果表明,当击穿电压VB为450V时,器件的比导通电阻RON,SP为9.5 mΩ· cm2,优值达21.3 MW/cm2,优值为现有器件的2.7倍.该项研究成果为功率集成电路提供了更优的器件选择.

A novel lateral power fin metal-oxide-semiconductor field-effect transistor (MOSFET) made on a silicon-on-insulator substrate is proposed. The fin silicon drift region of the proposed device is surrounded by a high-k (HK) passivation. The HK passivation enables the proposed device to realize a three-dimensional (3D) enhanced reduced-surface-field action and a 3D accumulation layer. According to the simulation results, when compared to a lateral power planar MOSFET with an HK passivation, the proposed device offers a 78% reduction in specific on-resistance at the same 100-V breakdown voltage. More comparative studies indicate that the static characteristic of the proposed device not only overcomes the silicon limit but also presents a significant advantage when compared to the prior art.

A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during the turn-off transient. This merit greatly reduces the current varying time of an HK-IGBT. Moreover, HK-IGBT can obtain a better electric field distribution, which enables the carrier stored layer (CSL) to have a higher doping dose when compared to a typical carrier stored trench gate bipolar transistor (CSTBT). These advantages improve the relationship between the static and transient power losses. According to the simulation results, HK-IGBT obtains a 66% lower turn-off loss than that of a field stop (FS) IGBT with the same ON-state voltage. Moreover, by using a CSL, the performance of an HK-IGBT can be comparable with that of a super-junction IGBT (SJ-IGBT).

介绍了一种利用高介电常数薄膜改进的、制作于绝缘衬底上的横向绝缘栅双极型晶体管(SOI-LIGBT).一方面,覆盖在硅表面的高介电常数薄膜具有引导电通量的作用,可优化器件漂移区的表面电场分布,在器件耐压等级不变的情况下,节约芯片面积,提高导电能力.另一方面,采用高介电常数薄膜有利于减少漂移区中存储的非平衡载流子,可缩短器件的关断时间,降低器件的关断损耗.仿真结果表明,相比于传统500 V等级的SOI-LIGBT,利用高介电常数薄膜改进的新器件可使器件长度缩短15％,导通压降降低10％,关断时间缩短42％,关断损耗减小61％.

A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.

In this study, SrTiO3 (STO) film without cracks is directly deposited on the surface of silicon. Some key characteristics of the film are measured. By taking the measurement results into the simulation, it is verified that the STO film is able to improve the surface electric field distribution of the lateral power devices. Meanwhile, the film can expand the process window to resist dose deviation by more than twice, which promises enhanced product yield. This study provides a reference for the material selection of High-k (HK) insulators, which have been used to develop the power semiconductor devices.

An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates QVSJ to significantly improve the relationship between breakdown voltage (BV) and specific on-state resistance (R ON,SP ). The simulation results show that compared with the conventional QVSJ T-LDMOS, the proposed one gains the R ON,SP reduced by about 79% under the same BV requirement of about 500 V. It therefore presents an excellent figure of merit (FOM) (FOM = BV 2 /R ON,SP , Baliga's FOM) up to 29.8 MW/cm 2 , which is superior to the prior art and exhibits a bright prospect of saving energy.

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for the first time. By adding one or several ODIs in the drift longitudinally equidistantly, the ODI-IGBT obtains a better electric field distribution than the field-stop IGBT (FS-IGBT) at OFF-state, which means a larger breakdown voltage. Moreover, at inductive load turn off transient, its space charge region is wider along with the better electric field distribution. Hence, less excess carriers are left when the anode voltage rises to the bus voltage. That is, its current decaying time is smaller than FS-IGBT, so does the turn off loss. Compared with the FS-IGBT in TSUPREM4 simulation, the ODI-IGBT can achieve a much lower turn off loss, which is only 52% of that of the FS-IGBT at the same breakdown voltage and same ON-state voltage. In addition, theODI-IGBT has a simplermanufacturingprocess and better immunity to process deviation than the super junction IGBT (SJ-IGBT).

An idea of applying a film of high-k (HK) material to the trench lateral double-diffused MOSFET (LDMOS) is proposed and studied by simulation. Through introducing an HK film around the SiO2 trench, the flow of electric flux is guided, and the distribution of the surface electric field is modulated. As a result, the tradeoff relationship between breakdown voltage (BV) and specific ON-resistance (R-ON,R- sp) is improved. Simulation results indicate that the HK film with a permittivity of 475 and a thickness of 400 nm can effectively reduceRON, sp at the BV class of 200 V. Compared with the conventional device without HK, the proposed one is in a position to save about 60% of the chip area, while they are having the approximateperformance andmanufacturing complexity. Hence, the application of HK film is promising to improve the cost performance of trench LDMOS.

A snapback-free and low turn-off loss silicon on insulator LIGBT with reverse-conducting capability (RC-LIGBT) is proposed and investigated in this paper. By employing P-type polysilicon (P-poly) double trench gates at the anode region of the proposed device (DTA-LIGBT), the n-drift region located between the P-type double trench gates (DPL region) is fully depleted because of the work function difference between the P-poly and the DPL region. Thus the resistance between the shorted N+ anode and the N-buffer is significantly increased, which effectively eliminates the snapback phenomenon. The simulation results reveal that the proposed structure completely eliminates the snapback effect with the reverse conducting voltage of 1.05 and 1.25 V at J = 100 and 400 A cm(-2), respectively. In addition, the LDMOS is automatically turned on when the device is operating at high voltage, which improves the immunity of latch-up and the short-circuit capability of the device. Simultaneously, the turn-off time of the proposed structure and the turn-off loss are reduced creased by 53.5% and 53% compared with that of the separated shorted-anode LIGBT (SSA-LIGBT), respectively. Moreover, the short-circuit time of the DTA-LIGBT (p) is increased by 186% compared with the SSA-LIGBT.

A design concept of variation vertical doping is proposed to upgrade the deep-trench lateral double-diffused metal–oxide–semiconductor field-effect transistor. Due to the proposal, a drift region in the form of charge-balance super-junction is first gained in such a device. Hence, the relationship between the breakdown voltage and the specific on-resistance is significantly improved. Numerical simulations demonstrate that the proposal is valid to increase the theoretical limit of the figure of merit to be about 44.9 MW/cm $^{\textsf {2}}$ , more than twice of that of the prior art. Besides, a feasible realization method is presented and studied.

A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some vertically varying charges into the SJ drift regions on both sides of the DT. Therefore, the adverse effect of the DT on the surface electric field distribution is withstood, and the device can approach an ideal state of charge-balance. Simulation results show compared with a conventional device, which has the same drift region concentration and the same size but the perpendicular sidewalls, the proposed device presents a better figure of merit over 2.5 times higher. Besides, a feasible fabrication process for the proposal is presented and discussed.

To resolve air traffic congestion and ensure flight safety, ADS-B provides a strong guarantee. As a collaborative associated monitoring system and an airborne aircraft navigation system, the main purpose of ADS-B is to periodically broadcast the aircraft-related parameters, such as call ICAO, longitude, latitude, altitude, speed, etc. However, the current terrestrial receiver baseband algorithm is the receiver baseband processing algorithms in ADS-B (1090ES) which is recommended in DO-260B aviation standards. Therefore, in this paper, I will introduce a new receiver baseband algorithm in space borne ADS-B (1090ES).

本文从带隙基准电路的原理出发，利用差分放大器的输出电压随温度变化的特性，提出了一种温度系数校正电路，并设计了一种在-40℃到120℃范围内最大温度误差为0.8℃的CMOS温度传感器。

研究了Trench-IGBT（沟槽栅）相对于Planar-IGBT（平面栅）的改变，分析了沟槽栅对器件性能的影响；研究了CSTBT（载流子存储型）的结构，分析了空穴阻挡层对器件正向导通电压产生的作用；研究了FS-IGBT（场阻型）相对于PT-IGBT（穿通型）和NPT-IGBT（非穿通型）在工艺和结构上的区别，从原理上分析了这种区别对FS-IGBT造成的性能改变；研究了RC-IGBT（逆导型）的结构及其工作原理，分析了阳极区的改变对其性能造成的影响。