A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical patterning limit. Multi-workfunction (WF) gate stack has been enabled to provide Vt tunability without the variability degradation induced by channel dopants.

In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrates. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical patterning limits. Multi-workfunction (MWF) gate stack has been enabled to provide Vt tunability without the variability degradation induced by Random Dopant Fluctuation (RDF) from channel dopants.

As technology has advanced, layout dependent device parameter shifts are becoming more influential to the actual circuit operation and performance, such that design style differences could create systematic device variability due to layout unless those effect are minimized and well captured in the device model[1]. In this paper, we characterize the device layout effects on a high performance planar 20nm CMOS technology for low power mobile applications [2], and demonstrate a layout effect reduction by optimizing key process elements while improving device performance. Nfet/pfet boundary proximity in Replacement Metal Gate (RMG), Length of active area (LOD or SA/SB) and gate pitch dependency are discussed in terms of Stress Memorization Technique (SMT) and embedded SiGe (eSiGe) processes.

This paper investigates and models Gate Induced Drain Leakage (GIDL) for a wide variety of high voltage devices with different low doped drain (LDD) structures. Based on TCAD simulations, we propose semi-analytical a pseudo-2D model for Gate induced Drain leakage. This model includes a complete modeling of the overlap region accounting for technological process and bulk bias dependency through detailed electric field description.

We present a 45-nm SOI CMOS technology that features: i) aggressive ground-rule (GR) scaling enabled by 1.2NA/193nm immersion lithography, ii) high-performance FET response enabled by the integration of multiple advanced strain and activation techniques, iii) a ftinctional SRAM with cell size of 0.37 mu m(2), and iv) a porous low-k (k=2.4) dielectric for minimized back-end wiring delay. The list of FET-specific performance elements includes enhanced dual-stress liner (DSL), advanced eSiGe, stress memorization (SMT), and advanced anneal (AA). The resulting PFET/NFET Idsat values, at Vdd of 1.0V and 45nm GR gate pitch, are 840 mu A/mu m and 1240 mu A/mu m respectively. The global wiring delay achieved with k=2.4 reflects a 20% reduction compared to k=3.0.

SRAM stability during word line disturb (access disturb) is becoming a key constraint for V/sub DD/ scaling (Burnett, 1994). In this paper we present a design methodology for SRAM stability during access disturb. In this methodology, the SRAM access disturb margin (ADM) is defined as the ratio of the magnitude of the critical current to maintain SRAM stability (I/sub CRIT/) to the sigma of I/sub CRIT/. Using ADM as a figure of merit, this methodology enables one to project the cell stability margin due to process variations, e.g. V/sub T/ variation, during design of a SRAM cell. Using statistical analysis, the required stability margin for an application requirement such as array size and available redundancy can be estimated. Direct cell probing and array test can be used to verify that the stability target is met.

Device design of the super-halo asymmetric vertical pass transistor embedded in a cost-efficient, litho-friendly 8F(2) DRAM cell is described. This device not only retains the double-gate feature that provides twice the drive current, but also improves write-back performance critical for DRAM applications while meeting the stringent 1fA off-current requirement. The key to achieving this degree of optimization is a super-halo angled Vt implant that produces multi-dimensionally graded well doping. The lateral grading provides small body effect and superior write-back performance that facilitates scaling with low wordline swings. The vertical grading leads to reduced short channel effect and de-coupled channel and node doping that not only reduces Junction leakage but also allows aggressive scaling of the vertical device channel length.

This paper describes a 110 nm half-pitch DRAM technology utilizing an 8F/sup 2/ vertical transistor trench cell and optimized for ease of manufacturing and scaling. All four critical lithography steps are regular patterns in the array. High performance is provided through the use of tungsten word-lines, tungsten bit-lines, and the double-gated vertical array transistors. Area enhancement techniques in the trench capacitor allow the use of conventional dielectric materials into the 110 nm generation. A 512 Mb prototype chip has been fabricated using this technology.

The 8F/sup 2/ vertical transistor DRAM cell is a cost-efficient, litho-friendly structure suitable for scaling to sub-100 nm ground rules. In this paper, we report on device design considerations for vertical pass transistors used in ultra-dense DRAM technologies. A double-gate, vertical DRAM pass transistor that meets 1fA off-current requirement and offers twice the current drive of comparable 175 nm planar devices will be presented. Additionally, structural features unique to vertical devices are highlighted.