基本信息
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Bio
Taeyoung Kim (S’10–M’17) received the B.S. degree in electronics engineering from Konkuk University, Seoul, South Korea, in 2005, the M.S. degree in electrical engineering from the University of Virginia, Charlottesville, VA, USA, in 2012, and the Ph.D. degree in computer science from the University of California at Riverside, Riverside, CA, USA, in 2017.
He is currently a Software Engineer at Intel Corporation, Hillsboro, OR, USA, where he is involved in signal integrity and power integrity. He has authored or coauthored over 30 papers in scientific journals and conference proceedings. His current research interests include modeling, simulation, and optimization for VLSI circuit reliability, signal integrity, and power integrity.
Dr. Kim received one Best Poster Research Award at the ACM Ph.D. Forum at the Design Automation Conference in 2015. He is an Associate Editor for the Integration, the VLSI Journal.
Research Interests
Papers共 51 篇Author StatisticsCo-AuthorSimilar Experts
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Long-Term Reliability of Nanometer VLSI Systemspp.121-151, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.177-194, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.47-66, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.343-356, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.217-245, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.373-399, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.357-372, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.247-262, (2019)
Long-Term Reliability of Nanometer VLSI Systemspp.439-455, (2019)
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