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    China Semiconductor Technology International Conference

    China Semiconductor Technology International Conference

    Conference

    年发文量

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    论文(1365)

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    1High Efficient Automatic Power/Ground Layout Routing Algorithm for Analog ICS
    Jiaxin. Zuo, Fei. Li,Jing. Wan

    In this work, we explored an efficient automatic layout routing algorithm for connecting the power and ground pins in analog integrated circuits. A rectilinear minimal spanning tree (RMST) algorithm for two sets of pins is developed, in which minimal spanning tree is used to form the initial connections between pins. The obstacle-avoiding maze routing algorithm is used to break and reconnect the power and ground nets to avoid any short circuit. The genetic algorithm (GA) is further introduced to optimize the total connection wirelength. We also expanding the wire width to avoid electromigration and IR-drop.

    2023
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    2Tungsten/Silicon Oxide/Titanium Nitride Stack Etching
    Jie Luo, Haochang Lyu, Linjie Hou,Baodong Han,Hongbo Sun,Chao Zhao

    The periodic stacked film etching is a key enabler of 3D device manufacturing. This work demonstrates a silicon oxide/tungsten/titanium nitride periodic stack etching in one etching step. Because of the chemical reaction mechanism differences for various materials, a wave-like sidewall is always observed after one step etching. Sub-100nm holes on single and periodic stacks are etched with Cl2/NF3/C4F6/Ar gases. By tailoring the gas ratio and bias power, passivation distribution and ion bombardment strength are optimized and a smooth sidewall with an excellent vertical profile is achieved.

    2023
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    3Some Key Modifications of Theory Required to Understand the Leakage Current Mechanisms for Ferroelectric HfZro Capacitors Used in Microelectronics
    W.S. Lau

    Previously in 2020, the author proposed a new unified theory regarding the image force dielectric constant for Schottky emission leakage current in high-k dielectric. In this paper, the author will try to point out that this theory can be applied to ferroelectric hafnium zirconium oxide (HfZrO) capacitor structures.

    2023
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    4An Efficient Tool for Generating Test Program to Save Marginal Fail Chips
    Hanyan Chen

    As for engineering verification, such as three-temperature test, corner test and wafer factory transfer, some experimental processing has been done on the chip, resulting in some parameters of the chip being slightly shifted compared with normal bin1 chip. As a result, some marginal fail would occur if tested by normal FT (Final Test) program. But these chips are good at EVB (Evaluation Board) verification. In this case, if need a test program to cover these chips, test engineers need to increase power voltage or slow frequency for the corresponding test item. In SMT7 (Smartest7) program, it may need to modify hundreds of level or timing spec (specification) values and generate a test program with a new, loosen spec value, which would take at least one day. This paper introduces a solution that can provide a simple excel format tool for input modification, a flexible operator configuration to deal with spec value and develop a new test program with the click of a few buttons. It’s highly integrated, comprehensively improves program development efficiency and is easy to use.

    2023
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    5A Scalable and Configurable Low-Power Mixed Signal Neuromorphic Accelerators for Spiking Neural Network
    Yekuan Chen, YiQi Meng, Yiling Chen,Xiaolei Zhu

    Spiking Neural Network (SNN) mimics the biologically inspired neural network that benefits for the computing with low power and high parallelism. In this paper, a scalable and configurable low-power mixed signal neuromorphic accelerator is proposed for the SNN application. It consists of 64 neurons, 64 synapses, 64×64 Static Random-Access Memory (SRAM) array, 64×64 Content Addressable Memory (CAM) array and a number of digital asynchronous routers. 15×64 neurons are fully connected by proposed scalable architecture. The proposed neuromorphic accelerator is designed in 65 nm CMOS process dissipating 4.8 mW at 100 MHz of clock frequency from a 1.2 V power supply.

    2023
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    高被引作者

    作者引用发文
    Yagang Yao931
    Jie Luo931
    Yue Zhao931
    Minghai Chen931
    Eddy Simoen6311
    Yue Xu597
    zhengkai yang5710
    N. Horiguchi533
    Geert Eneman522
    albert pang527

    高产作者

    作者引用发文
    JingXun Fang3232
    Ru Huang2630
    Yu Zhang1127
    Hai-Yang Zhang1726
    Haifeng Zhou1926
    Hualun Chen1020
    Quanbo Li3119
    WenSheng Qian1518
    Kailiang Zhang3317
    Tomi T. Li2916

    相关期刊

    International Reliability Physics Symposium
    IEEE Workshop on Microelectronics and Electron Devices : [proceedings]
    IEEE Transactions on Device and Materials Reliability
    Journal of Semiconductor Technology and Science
    Journal of Integrated Circuits and Systems
    International Symposium on the Physical and Failure Analysis of Integrated Circuits
    International Memory Workshop
    International Conference on Microelectronic Test Structures
    Symposium on VLSI Technology
    International Electron Devices Meeting