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    IEEE transactions on electron devices

    IEEE transactions on electron devices

    JournalISSN 0018-9383eISSN 1557-9646中科院 工程技术 3区

    年发文量

    研究主题

    论文(31705)

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    1Metallic Nanograting-Driven Ultrahigh-Performance Ga 2 O 3 Solar-Blind Photodetector
    Zhehui Tang,Dan Yang,Qiqing Li, Chenxi Wang, Yue Dai,Haizhong Zhang,Xiaoqiang Lu,Minmin Zhu
    2026
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    2Metallic Nanograting-Driven Ultrahigh-Performance Ga2O3 Solar-Blind Photodetector
    Zhehui Tang,Dan Yang,Qiqing Li, Chenxi Wang, Yue Dai,Haizhong Zhang,Xiaoqiang Lu,Minmin Zhu

    Solar-blind ultraviolet (UV) photodetectors (PDs) based on $\boldsymbol {\beta }$ -Ga2O3 hold considerable promise for both military and civilian applications owing to their wide bandgap and excellent stability. However, light absorption in the Ga2O3 layer is significantly reduced by surface metal electrodes, thereby limiting quantum efficiency. Here, we report a combined theoretical and experimental study of solar-blind UV metal–semiconductor–metal (MSM) Ga2O3 PDs incorporating Ti/Au nanogratings. Simulations reveal that the nanogratings excite localized surface plasmon resonance (LSPR), effectively enhancing light absorption in the Ga2O3 layer. The fabricated devices achieve external quantum efficiencies (EQEs) of $10^{6}$ %– $10^{7}$ %, substantially outperforming conventional MSM PDs with interdigital electrodes. Furthermore, we demonstrate that grating width critically regulates LSPR, with the optimized device achieving a responsivity (R) of $1.14 \times {{10}^{5}} \mathrm {A}\cdot \mathrm {{W}^{-1}}$ , an EQE of 5.57% $\times{\,} {10}^{{7}}$ %, and a specific detectivity ( $\mathrm {D}^{*}$ ) of ${{3.01}} \times {{10}^{12}}$ Jones. These findings provide design guidelines for plasmonic nanogratings and a promising strategy for high-performance solar-blind UV PDs.

    2026
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    3Study of Nonlinear Scanning Behaviors of PZT-Based Piezoelectric Micromirrors under DC-Biasing
    Ke Cao,Qincheng Zheng, Chenyu Bai, Yulang Cheng, Hao Chen,Qian Chen,Huikai Xie

    Lead zirconate titanate (PZT)-based piezoelectric MEMS micromirrors are highly desirable for their high responsivity, high speed, and low power, but their achievable scan range is fundamentally limited by the large nonlinearities arising from the ferroelectric properties of PZT, especially under high-voltage excitation. In this work, a DC-biasing strategy is proposed to suppress the nonlinearity and extend the usable scan range without the need to modify the device structure or material composition. A piezoelectric micromirror with Z-shaped PZT actuators and a $1\times 1$ mm mirror aperture is designed and fabricated. The nonlinear scanning behaviors of the micromirror are systematically studied under various DC bias voltages in both low-frequency and resonant operation modes. Under low-frequency operation, the effects of DC bias are investigated over a voltage range of −20 to + 20 V. Under a −15 V DC bias, the optical scan angle reaches ±6.5° at 50 Vpp at 10 Hz, a threefold increase compared with that without DC bias, and achieves a linearity of ${\mathrm {R}}^{{2}} =0.997$ , compared with ${\mathrm {R}}^{{2}} =0.887$ under the unbiased condition. Under resonant operation, a −15 V DC bias increases the optical scan angle to ±38.3° at 30 Vpp excitation and the resonant frequency of 1.35kHz, corresponding to a 58% enhancement compared with the unbiased condition. The effectiveness of DC bias is strongly dependent on the bias polarity. A bias aligned with the initial polarization shifts the polarization response away from the coercive field and suppresses ferroelectric polarization switching. These results establish DC-biasing as an effective approach for achieving large-angle and high-linearity optical scanning.

    2026
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    4Investigation of an Ammonia Sensor Based on a Sputtered Tungsten-Doped Indium Oxide (IWO) Thin Film Incorporated with Evaporated Platinum Nanoparticles
    Shih Wei Tan, Shih Chi Chang, Jia Jin Jian, Wen Chau Liu

    An innovative ammonia (NH ${}_{{3}}\text {)}$ gas sensor is fabricated by integrating a sputtered tungsten-doped indium oxide (IWO) thin film with evaporated platinum nanoparticles (Pt NPs) and deposited on a sapphire substrate. The inclusion of Pt NPs significantly enhances the performance of the sensor in detecting NH3, leveraging their catalytic properties to increase sensitivity. Extensive analyses were conducted to characterize the compositional, elemental, and structural properties of the sensor, providing valuable insights into its enhanced sensing capabilities. Steady-state current–voltage ( $I$ – $V$ ) and transient current–time (I–t) measurements were meticulously recorded to investigate the NH3 gas-sensing behavior comprehensively. Under operational conditions of $200^{\circ }$ C, when exposed to 1000 ppm NH3 in air, the studied sensor exhibited a remarkable response of 142. It demonstrated a response time of 177 s and a recovery time of 49 s. Impressively, the sensor can detect lower concentrations, down to 1 ppm NH3, showcasing its wide detection range. To understand the sensing mechanism, an investigation into the adsorption of NH3 molecules on the surface of the sensor was conducted. This analysis shed light on the phenomena related to surface coverage and gas interaction. The studied sensor also shows promising selectivity toNH3 gas.

    2026
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    5A Terahertz Frequency Multiplier Based on Superradiant Smith–Purcell Radiation from a Grooved Subwavelength Hole Array
    Youfeng Yang,Duo Xu,Ping Zhang,Yuan Zheng,Zhanliang Wang,Zhigang Lu,Shaomeng Wang,Yubin Gong

    To preserve a large beam tunnel and maintain a high beam transmission ratio in the terahertz (THz) band, a frequency multiplier based on superradiant Smith–Purcell radiation (SSPR) from a grooved subwavelength hole array (GSHA) is proposed. Compared with the conventional subwavelength hole array (CSHA), the GSHA offers a larger characteristic impedance ${R}/{Q}$ and stronger radiation, while its beam tunnel radius is more than twice that of conventional 660-GHz devices. Under the same operating conditions, PIC simulations show that the output power of the proposed GSHA-based multiplier is more than 2.8 times that of the CSHA. Without phase velocity taper (PVT), it achieves a peak output power of 72 mW at 660.2 GHz with a −3-dB bandwidth of 2.6 GHz. By tuning the input power, the −3 dB bandwidth is extended to 3.2 GHz (659.2–662.4 GHz). With PVT, the peak output power reaches 111 mW. Cold-test results demonstrate that the fabricated modified folded waveguide (MFWG) slow wave structure (SWS) exhibits a reflection coefficient below −15 dB across 328.3–336.0 GHz, along with well-matched transmission characteristics. Meanwhile, the measured and simulated results of the GSHA exhibit excellent agreement within the 655–665-GHz range. These results indicate that the GSHA-based frequency multiplier offers an effective solution to the challenge of implementing electron optical systems (EOSs) for THz vacuum electronic devices (VEDs).

    2026
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    高被引作者

    作者引用发文
    Chenming Hu12511104
    Guido Groeseneken10188118
    H.-S. Philip Wong918094
    Tsu-Jae King Liu762283
    P. K. Ko715848
    Mark S. Lundstrom691656
    Daniele Ielmini678771
    Krishna Saraswat664783
    Asen Asenov613978
    Lacaita Andrea Leonardo578969

    高产作者

    作者引用发文
    Yue Hao3016228
    Bo Zhang2356145
    Guido Groeseneken10188118
    Yubin Gong1301111
    Chenming Hu12511104
    Yogesh S. Chauhan277196
    Enrico Zanoni540395
    H.-S. Philip Wong918094
    Eddy Simoen242091
    Gaudenzio Meneghesso483590

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