Security technologies are essential for resource-constrained edge devices, as the rapid growth of data driven by cloud computing and escalating cybersecurity threats increase security demands at the edge. Most existing designs implement key generation and encryption computation as separate modules, resulting in limited overall integration, which increases data transmission and storage overhead. This work presents a hardware security design based on resistive random access memory (RRAM) model. A dual-mode 2R array is constructed to integrate key generation and encryption computation by switching between iterative physically unclonable function (PUF) operation and reconfigurable Boolean logic calculation. Results show that the proposed PUF achieves 50.1% uniqueness, 50.2% uniformity, and 99.3% reliability. The logic operation accuracy exceeds 99%, and the complete encryption and decryption process achieves 99.1% recovery accuracy. Furthermore, the scheme maintains robust performance under temperature variations and noise interference. This work demonstrates the potential of RRAM for hardware security and contributes to the development of key generation and encryption computation.
In this work, a monolithic integrated reverse-conduction p-GaN gate HEMT (RSBD-RC-HEMT) is proposed and demonstrated on p-GaN/AlGaN/GaN/Si wafer, featuring a recess Schottky barrier diode (R-SBD) anti-parallelly embedded in the p-GaN gate HEMT. Based on the optimization of anode engineering technique, the proposed device shows an ultra-low reverse turn-on voltage VRT of −0.465 V at ID = −1 mA/mm and a low off-state leakage current IOFF of ∼38 nA/mm at VDS = 200 V. Furthermore, the lower reverse conduction voltage VRC of −2.42 V at ID = −100 mA/mm could be realized in RSBD-RC-HEMT compared with VRC of −4.35 V in conventional p-GaN gate HEMT, which indicates a lower reverse conduction loss. In addition, the RSBD-RC-HEMT exhibits a low on-resistance RON of 12.2 Ω mm, a high breakdown voltage VBD of ∼945 V with grounded substrate and ∼1326 V with floating substrate. These results demonstrate the potential of the RSBD-RC-HEMT for future integrated power-electronic systems.
