The tribovoltaic nanogenerator (TVNG) has attracted significant interest for the direct current output and high current density. However, the TVNG still faces challenges including: A significant decrease in current density occurs with increasing contact area, attributable to the numerous non-contact regions at the interface; Semiconductor electrical properties cause energy loss in the arraying process. We developed a flexible rolling triboelectric nanogenerator (FR-TVNG), wherein the flexible substrate with a low Young's modulus facilitates an increase in the contact area, thereby enhancing interfacial electric field generation and the excitation of electron-hole pairs. A current density of 1.3 x 10-1 A/m2 (0.8 cm2) was achieved. Furthermore, we implemented an array integration strategy utilizing bypass diodes and blocking diodes, effectively mitigating energy loss in array.
The scalable synthesis of perovskite nanocrystals (PNCs) with monodispersity and high emission efficiency remains a significant challenge, primarily limited by the inherent constraints of flask-based batch synthesis in handling large volumes. Here, we propose a novel microscale continuous droplet-in-flow synthesis (µ-CDFS) of PNCs stabilized by zwitterionic ligands. This synergy, arising from the spatial and temporal separation of droplet-based reactors and a cross-locked PNC-ligand surface coordination, ensures exceptional mixing efficiency and consistency. Consequently, our approach enables the scalable production of high-quality PNCs, delivering a continuous output of 0.8 g h- 1 per channel, a narrow size distribution (σr < 14%), and a photoluminescence quantum yield (PLQY) exceeding 97%. Furthermore, high-throughput ligand screening is also performed via autonomous flow experimentation, and the emission of PNCs is precisely tuned across the visible region (453-753 nm) via on-demand halide anion exchange, establishing a robust platform for the accelerated discovery of PNCs.
ABSTRACT A high‐quality quantum dots (QDs) layer is crucial for the commercialization of quantum dot light‐emitting diode (QLED) devices. However, current fabrication techniques cannot simultaneously achieve monolayer coverage, ordered arrangement, and large‐area scalability. Herein, we develop a novel strategy of continuous stepwise self‐assembly for QDs monolayer integrated the air‐liquid interfacial assembly technology with continuous line‐ink‐supply and Langmuir‐Schaefer (LS) technology, which the QDs can be finely to assemble into large area ordered and dense QDs monolayer film at the trailing edge of the flow. The ordered QD monolayers can be repeatedly transferred and stacked to accurately control the thickness of the luminescent layer in QLED devices. Green QLED based on this monolayer film reaches a high EQE of 23.85%. Furthermore, the optimized trilayer device exhibits negligible efficiency roll‐off, retaining an EQE above 18% and a luminous efficacy of 60 lm W −1 at a luminance of 200 000 cd m −2 . This methodology also shows preliminary scalability potential. We achieved a trial fabrication of large‐area QD films of 210 cm 2 and further constructed corresponding QLED devices with an emission area of 1.5 cm × 1.5 cm as an initial exploration.
Abstract Two-dimensional (2D) van der Waals materials, especially transition-metal dichalcogenide molybdenum disulfide (MoS2), have emerged as key candidate materials for advancing optoelectronics and integrated circuits due to their unique physical properties. However, the high contact barrier between the metal and semiconductor has hindered further performance improvement. Here, we introduce a novel triboelectric plasma regulation technique aimed at reducing the contact barrier between the metal and semiconductor. By injecting electrons into the S-vacancy and keeping them at the defect sites, stable electron-vacancy complexes are formed, which induce an external reverse electric field and effectively reduce the contact potential barrier between the metal and the semiconductor. At the same time, the efficiency of free-carrier injection is enhanced, significantly improving the optoelectronic performance and gate modulation capability of the device. The results show that the photoresponse performance and gate modulation ability of MoS2 devices grown by chemical vapor deposition (CVD) have been improved by 22 times and 3 orders of magnitude, respectively. This triboelectric plasma regulation technique demonstrates great potential for optimizing the performance of 2D semiconductor devices.
The development of triboelectric nanogenerators (TENGs) for underwater applications has been persistently challenged by the fundamental conflict between packaging-dependent pressure resistance and the need for adaptive, efficient energy conversion in water environments. Here, we propose a liquid dielectric (LD)-mediated interfacial switching strategy that enables an underwater packaging-free TENG (UPF-TENG) based on a movable core-shell structure. By introducing a functional ball impregnated with LD into a shell with deflector holes, dynamic and reversible switching between solid-water and solid-LD interfaces can be realized, which effectively disrupts the electric double-layer shielding effect while maintaining intrinsic pressure adaptability. The microscopic mechanism by which LD drives water on solid surfaces was verified through molecular dynamics simulations. Systematic optimization of the LD's properties and the porous carrier matrix ensures efficient and stable charge transfer. The UPF-TENG exhibits multimodal responsiveness to various flow patterns, which simultaneously enable energy harvesting and flow sensing. Based on the movable core-shell structure with deflector holes designed, the UPF-TENG may achieve pressure adaptation and operation in the full-ocean depth environment. This work also establishes a new paradigm for underwater energy harvesting through active liquid-phase interface control and provides a viable technology for sustainable power solutions in deep-sea exploration and monitoring systems.
Electrodeposited Cu2ZnSn(S,Se)4 (CZTSSe) on fluorine-doped tin oxide (FTO) is promising for transparent photovoltaic devices yet constrained by inhomogeneous nucleation, inferior crystallization, and severe back-contact barriers, limiting its efficiency to ∼4.7%. Herein, a Ag nanoseed layer is developed to synergistically regulate the electrodeposition kinetics and postselenization crystallization. The Ag nanoseeds afford abundant highly active heterogeneous nucleation sites to reduce Cu2+ migration barriers and yield dense uniform metallic precursors. Upon selenization, the generated low-melting Ag-Sn-Se liquid phase accelerates grain growth and suppresses deep-level defects. Meanwhile, Ag incorporation tailors interfacial energy-level alignment and converts the unfavorable Schottky hole barrier into a hole-transport-favorable interface. Owing to these combined effects, the optimized device achieves an impressively enhanced efficiency from 3.22% to 6.30%, setting a new efficiency record for FTO-based electrodeposited CZTSe devices. This work offers a facile route toward efficient, low-cost chalcogenide photovoltaics for transparent optoelectronics.
A key reason for Cu2ZnSn(S,Se)4 (CZTSSe, 15.8%) solar cells lagging far behind Cu(In,Ga)Se2 (CIGS, 23.6%) in efficiency is its inability to autonomously form a dual-gradient bandgap via Ga gradient, critical for the simultaneous efficient light absorption and directed carrier transport. Herein, this study proposes a novel strategy for the spontaneous construction of dual gradients CZTSSe with a S-rich front interface and a Ge-rich back interface based on SnS-GeSe co-sulfoselenization. SnS releases S vapor and Sn2Se3 intermediate phase during selenization, synchronously compensating for Sn volatilization loss and forming a S-rich surface layer, leading to a synergistic composition stability and interface defect passivation. Meanwhile, GeSe, by virtue of its eutectic property, promotes the migration and enrichment of Ge toward the back interface for an efficient back surface field and suppresses defects. The S-rich front widens the surface bandgap to improve open-circuit voltage (VOC), and the Ge-rich back elevates the back conduction band minimum (CBM) and suppresses the Sn-related defect to facilitate carrier transport. As a positive result, the optimized devices achieve a 26% enhancement in photovoltaic efficiency, offering a new insight for the development of high-efficiency kesterite-based solar cells.
Combining near-coincidence-site lattice (NCSL) calculations and fringing-field simulations, we investigate the formation conditions and spatial vector distribution of the interfacial electric field at anatase/rutile phase junctions in TiO2 nanoparticles. Our analysis reveals that charge separation in these mixed-phase systems is governed not by the long-range built-in field of a classical depletion region, but by a strong, short-range fringing field localized at the phase boundary. The minority-carrier migration length defines an optimal phase-size combination of approximately 20 nm anatase and 6-13 nm rutile, within which the fringing-field strength exceeds 102 kV·cm-1. This work provides a quantitative design principle for enhancing charge separation efficiency through precise nanoscale phase engineering in mixed-phase photocatalysts and photovoltaic devices.
Hybrid nanogenerators demonstrate significant potential in extracting water droplet mechanical energy. However, conventional hybrid systems typically employ simple series or parallel integration methods, often overlooking the dynamic morphological evolution of droplets upon impact with the device surface. This oversight generally sacrifices the advantages of one of the units, hindering the synergistic optimization of the overall performance. Inspired by the architecture of ancient Chinese roof tiles, we present a curved piezoelectric-triboelectric hybrid energy harvester. The curved structure not only reduces the effective contact area during the initial droplet impact stage, significantly enhancing the electrical output of the piezoelectric nanogenerator through stress concentration, but also increases the coverage area between the droplet and the triboelectric layer upon full spreading, thereby improving the output performance of the triboelectric nanogenerator. Compared with a planar counterpart, the curved piezoelectric component with engineered surface structure achieves an approximately 2400% increase in short-circuit current, reaching a peak value of 12 & micro;A. In parallel, the curved triboelectric component exhibits a 130% enhancement in both transferred charge and short-circuit current. Finally, we demonstrate its potential application in the protection of ancient architectural heritage.
The red QLEDs employing a pH-neutral PEDOT:PMA hole injection layer synthesized using phosphomolybdic acid exhibit an impressive EQE of up to 32.24% along with remarkable operational stability.
The wide application of layered two-dimensional (2D) materials has long been put off by contact issue. One effective solution is tunneling contact, which circumvent the defects and accompanied “Fermi level pinning” effect by inserting ultra-thin materials, such as 2D hBN, between metal and semiconductor as tunneling layer. However, so far the rare researches on tunneling contact are still insufficient to guide device performance optimization and promote future applications. Herein, a well calibrated tunneling-contact technology computer-aided design (TCAD) model is built with BP as channel material. BP is one 2D material with strong quantum confinement effect and avalanche multiplication. Through modulating key simulation parameters, the carrier tunneling, impact ionization, photo response and thermal property of hBN/BP transistor is systematically studied. The mechanisms of carrier tunneling and multiplication are clearly elucidated together with optimization suggestions, which may pave the way of using tunneling-contact technique to relieve contact issue.
The degradation of the underlying perovskite quantum dot (PQD) layers by the ZnMgO ink hinders the performance of all-solution-processed perovskite quantum dot light-emitting diodes (P-QLEDs). Herein, a novel dual-sided interface optimization is proposed for the fabrication of P-QLEDs: (i) cross-locking PQD surface ions with a robust zwitterionic ligand to boost their chemical and solvent tolerance; (ii) improving ink orthogonality via optimizing the solvent of ZnMgO to acetonitrile and eliminating residual hydroxyl groups from the ZnMgO surface. As a result, the ZnMgO is deposited on the PQD films without causing serious degradation, leading to improved carrier injection and radiative recombination. The optimized P-QLEDs achieve a maximum luminance of 134 920 cd m-2 and a peak external quantum efficiency (EQE) of 8.3%, ranking among the state-of-the-art all-solution-processed green-emitting devices.
Metal oxide semiconductor (MOS) gas sensors hold significant promise for applications in public safety, health diagnostics, and industry. However, these sensors typically require high operating temperatures, which lead to poor stability and high power consumption. This paper reports a triboelectric plasma regulated ZnO film based ultra-low power consumption room-temperature acetone gas sensor. The triboelectric nanogenerator (TENG) induces negative corona discharge to ionize the air, generating O2-which adsorbs onto the surface of the ZnO film to form a gas ion gate, effectively reducing the background current of the ZnO film. This mechanism enables ultra-low power consumption in the device. Additionally, continuous plasma bombardment generates a large number of Vo+ in the ZnO film, and the adsorbed O2-amically reacts with Vo+ to form highly reactive oxygen species O2-(Vo+), which enhance its room-temperature detection capability for acetone gas. This dual-function regulation mechanism-simultaneously reducing background current and promoting the formation of reactive oxygen species-enables excellent room-temperature detection performance for acetone. As a result, the minimum power consumption of 11 pW at room temperature can be obtained. Our findings provide an effective strategy for realizing low power consumption acetone gas sensing.
The Zinc-Magnesium oxide (ZnMgO, ZMO) nanoparticles (NPs) are well-documented as electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). However, ZnO/ZMO nanoparticles prepared via low-temperature sol-gel methods with small grain size and abundant surface defects always suffer from structural and electrical drift, causing lifespan reduction and performance fluctuations of devices. Herein, the benzyl phosphate (BPA) and its derivatives are introduced onto the surface of ZMO NPs as armor layer to stabilize and regulate their properties as ETLs. The prepared ZMO capped with BPA NPs have fine structural and electrical properties stability, which have simultaneously achieves effective defect passivation, enhances nanoparticle dispersibility and stability, and precisely tunes energy levels to balance charge injection. By benefiting from the robust ZMO ETLs, the overall performance of the QLED devices has been greatly boosted. The resulting external quantum efficiency (EQE) of green QLEDs is increased from 20.8% to 29.9%, showing the best performance among currently reported ZMO-based green QLEDs, and over 3.3-fold improvement in T95 operation lifetime at 1000 cd m- 2. The relevant physical mechanism has also been investigated. Current work will inspire the exploration of ZMO decorating engineering to construct solution-processed QLEDs device with higher performance.
Employing renewable energy technology to convert CO2 into high value-added products is one of the most desirable approaches to addressing global warming. The most critical process in CO2 reduction is the formation of CO2 - radical anions by excited electrons, which are metastable, and electrons can easily detach from CO2 molecules, especially in the gas phase. Herein, we propose a CO2-H2O triboelectric plasma system driven by mechanical energy that introduces water molecules to form stable hydrated carbon dioxide radical anions. Compared with CO2 triboelectric plasma, after the introduction of water vapor, the CO evolution rate increases to 15.9 mu mol h- 1, the CO selectivity increases to 98.5 %, and the energy efficiency increases to 44.6 % with a growth rate of 137.2 %, higher than those of most results previously reported under similar conditions driven by plasma. In-situ modified mass spectroscopic analysis indicates the presence of a large amount of hydrated carbon dioxide radical anions CO2- center dot(H2O)m in the CO2-H2O triboelectric plasma. Theoretical calculation results show that compared with CO2 - anions, the electron affinity energy of CO2- center dot(H2O)m (m = 1 - 3) species increases from -0.8 to 0.1-0.7 eV, boosting the energy barrier for further autodetachment, while the C-O bond dissociation energy barrier decreases to 3.4 - 2.8 eV for CO2- center dot(H2O)m species, m = 1 - 3, which favors the decomposition of CO2 - radical anions, thus increasing reaction activity and energy efficiency.
The electrochemical CO2 reduction reaction (CO2RR) in an acidic medium is a promising pathway to produce high-valued commodity chemicals. However, a highly selective CO2RR in acids cannot be attained due to competing hydrogen evolution reactions (HERs) on the electrocatalyst surface. Here, we demonstrate a hybrid triboelectric plasma-electrochemical system induced by mechanical energy in strong acids associated with a gas-liquid interface triboelectric plasma that triggers CO2 reduction at room temperature and atmospheric pressure without catalysts or alkali cations. Record-high selectivity of CO (nearly 100%) and energy efficiency from electrical-to-chemical energy of 66.7% are achieved, outperforming the previously reported results for advanced electrocatalytic CO2RRs. The unprecedented selectivity is attributed to the solvated CO2- radical anions at the gas triboelectric plasma-liquid interface, which prefers to react with protons to form the key intermediate of COOH. Our findings uncover the potential of a mechanical energy-induced triboelectric plasma-electrochemical process for overcoming the selectivity limitations of electrocatalytic reactions.
Correction for ‘Highly selective, catalyst-free CO 2 reduction in strong acid without alkali cations by a mechanical energy-induced triboelectric plasma-electrolytic system’ by Hui Hu et al. , Green Chem. , 2025, https://doi.org/10.1039/d5gc00977d.
The self-powered photodetectors (PDs) have gained much attention due to they do not require additional external energy and can be well applied in distributed optoelectronic detection networks. However, the small built-in electric field and rich interface states of self-powered PDs, make it a severe challenge to achieve large linear dynamic range (LDR) and high responsivity. Herein, a n-Si/n-ZnO heterojunction structure self-powered PD is constructed, fully utilizing the characteristics of transient current less affected by the excitation power and interface states, and using transient current as the detection signal significantly improves the PD's photocurrent responsivity (R) and the LDR. Under the excitation of 365, 530, 660 and 970 nm light, the device's maximal peak-to-peak transient current responsivity (Rtt') values are 89.3, 341, 439 and 542 mAW-1. The device's corresponding LDR is 113.8, 112.5, 105.9 and 74.6 dB, which are 25.9, 29.9, 20.3 and 14.4 dB higher than steady-state current (Is), respectively. Furthermore, in the presence of background light, the device's transient current exhibits enhanced light intensity change resolution and background light interference resistance. Finally, the 6 x 6 detector array's transient current (It) response has a good consistency and LDR, which significantly improves the device's imaging quality and resolution. This work provides new ideas for improving the R and LDR of self-powered PDs, and will promote the development and application of transient current responsive self-powered PDs in the fields of high-sensitivity detection and fast imaging.
Laser & Photonics ReviewsVolume 19, Issue 1 2570003 Back CoverFree Access Surface Cation Cross-Locking Enables Non-Destructive "On-Demand" Synthesis of Anion-Exchanged CsPbX3 Perovskite Nanocrystals (Laser Photonics Rev. 19(1)/2025) Guangguang Huang, Guangguang HuangSearch for more papers by this authorKaiwei Sun, Kaiwei SunSearch for more papers by this authorXinyang Xiong, Xinyang XiongSearch for more papers by this authorLong Song, Long SongSearch for more papers by this authorGaoke Liu, Gaoke LiuSearch for more papers by this authorChaofang Zheng, Chaofang ZhengSearch for more papers by this authorFeilong Yu, Feilong YuSearch for more papers by this authorZuliang Du, Zuliang DuSearch for more papers by this author Guangguang Huang, Guangguang HuangSearch for more papers by this authorKaiwei Sun, Kaiwei SunSearch for more papers by this authorXinyang Xiong, Xinyang XiongSearch for more papers by this authorLong Song, Long SongSearch for more papers by this authorGaoke Liu, Gaoke LiuSearch for more papers by this authorChaofang Zheng, Chaofang ZhengSearch for more papers by this authorFeilong Yu, Feilong YuSearch for more papers by this authorZuliang Du, Zuliang DuSearch for more papers by this author First published: 08 January 2025 https://doi.org/10.1002/lpor.202570003AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookxLinkedInRedditWechat Graphical Abstract Halide Anion-Exchange for Perovskite Nanocrystals In article number 2401121, Guangguang Huang, Zuliang Du, and co-workers propose a novel surface cation cross-locking strategy to achieve anion-exchanged full-color CsPbX3 PNCs (X = Cl, Br, I) with non-destructive emissions. Moreover, the real-time "on-demand" synthesis of anion-exchanged PNCs is also explored through autonomous robotic in-flow experimentation, exhibiting great potential in promoting the commercial application of these PNCs in lighting and display. Volume19, Issue1January 8, 20252570003 RelatedInformation
The poor efficiency and stability of blue Quantum Dot Light-Emitting diodes (QLED) hinders the practical applications of QLEDs full-color displays. Excessive electron injection, insufficient hole injection, and abundant defects on the surface of quantum dots (QD) are the main issues limiting the performance of blue devices. Herein, an in situ treatment with bipolar small molecule polydentate ligand-guanidine chloride (GACl) is proposed to simultaneously suppress excessive electron injection, patch surface defects of QDs and enhance hole injection. GACl-treated blue QLEDs exhibited a remarkable increase in maximal external quantum Efficiency (EQE) from 16.3% to a record 23.5%, accompanied by maximal luminance (36810 cd m-2), excellent maximal current efficiency (17.5 cd A-1), and enhanced device stability. Combining C-V and J-V characteristics, a concise physical model of hole injection is also established: Below 3 V, hole injection is controlled by the interfacial barrier, primarily through tunneling and thermionic injection; Above 3 V, the interfacial barrier is eliminated, and hole injection efficiency is governed by transport within the QD layer. This study showed a clear physical model for understanding the hole injection mechanism in QLEDs, offering valuable design strategies for improving the performance of blue-QLEDs.