We design and demonstrate a monolithically integrated silicon photonic multichannel optical hybrid for versatile broadband coherent reception, addressing the critical limitations of current wavelength-multiplexed systems in scalability and power efficiency. The device combines a phase-compensated 90 degrees optical hybrid with four robust three-stage Mach-Zehnder interferometer lattice filters, enabling 34-port functionality (two inputs and 32 outputs) for simultaneous analogue and digital signal processing. Leveraging multimode interferometer designs, the chip achieves a broadband response with sub-dB passband uniformity across eight 200 GHz-spaced wavelength channels, while maintaining phase errors within +/- 2 degrees over a 12.5 nm bandwidth (1540-1552.5 nm) with only 2.5 mW thermal tuning power. Experimentally, we validate its parallel-processing capability through RF channelizer reception (showing an average spurious-free dynamic range of 80.8 dB & centerdot;Hz2/3 and image rejection ratio of 33.26 dB) and coherent optical communication (achieving an experimental data rate of 1.024 Tb/s for 32 GBaud 16-QAM signals with bit error rates far below the 20% SD-FEC threshold). The scheme enhances system performance with fully passive wavelength multiplexing integration, supporting high-fidelity uniformity and theoretical projecting scalability to 1.468 Tb/s based on SNR analysis. This work promises advancements in high-performance optoelectronic devices for next-generation AI-driven data centers and 5G-XG networks.

Abstract The development of miniaturized spectrometers for cost-effective mobile applications remains challenging, as small footprints fundamentally degrade bandwidth and resolution. Typically, achieving high resolution necessitates extended and sophisticated optical paths for spectral decorrelation. These restrict bandwidth both physically (through resonant wavelength periodicity constraints) and mathematically (due to resulting ill-conditioned large matrix factorizations). Here, we report a spectrometer using a computational dispersion-engineered silicon photonic Vernier caliper. This deterministic design enables periodicity-suppressed orthogonal measurements by nature, thus overcoming the bandwidth-resolution-footprint limit of current chip-scale spectrometers. Leveraging the dispersion-engineered Vernier subwavelength grating microrings and factorizations-free matrix computation, an average spectral resolution of 1.35 pm is achieved throughout a bandwidth of > 160 nm with a footprint of < 55 × 35 μm2 in a single detection channel, establishing the highest bandwidth-to-resolution-to-footprint ratio (> 61.5 μm− 2) demonstrated to date. Furthermore, broadband densely overlapped molecular absorption spectra of hydrogen cyanide are precisely measured, resolving 49 R- and P-branch lines with linewidths ranging from 15 to 86 pm which is fundamentally challenging for compressive sensing approaches. Our chip-scale spectrometer provides a new path toward precise and real-time multi-species spectral analysis and facilitates their commercialization.

Unlocking the full potential of integrated photonics requires versatile, multi-functional devices that can adapt to diverse application demands. However, confronting this challenge with conventional single-function resonators often results in cumbersome system designs. We present an elegant solution: a versatile and reconfigurable dual-polarization Si3N4 microresonator that represents a new perspective in on-chip photonic designs. Our device can be dynamically reconfigured into three distinct topologies: a M & ouml;bius-like microcavity, a Fabry-P & eacute;rot resonator, and a microring resonator. This unprecedented functionality is enabled by a tunable balanced Mach-Zehnder interferometer that facilitates controllable mutual mode coupling of counterpropagating light using a single control knob. We experimentally demonstrate that the device not only supports polarization-diverse operation on a compact footprint but also gives rise to a wide variety of physical phenomena, including a standing wave cavity, a traveling wave cavity, free spectral range multiplication, and the photonic pinning effect. These behaviors are accurately modeled using the transfer matrix method and intuitively explained by the temporal coupled-mode theory. Our results underscore the potential for a chip-scale platform to realize reconfigurable reconstructive spectrometers and on-chip synthetic dimensions for topological physics.

The integration of two-dimensional transition metal dichalcogenide (TMD) layers into van der Waals (vdW) heterostructures offers substantial opportunities for both materials synthesis and device design. Interlayer interactions enable desirable functionalities, and manipulating these interactions is essential for optimizing device performance. In this work, we introduce ozone intercalation into vdW heterostructures and adopt laser irradiation as a manipulation tool, creating a photoluminescence (PL)-based modulation type using interface engineering. Interlayer engineering can be quantitatively achieved by precisely controlling the laser modification time, enabling a controllable PL intensity from no quenching to quenching. The mechanism behind this regulation can be attributed to the interlayer exciton suppression introduced by ozone intercalation being repaired by ozone molecule reduction during the laser treatment. This effective regulatory technique is universal and can be achieved in various type II band-aligned TMD heterostructures, providing an intriguing strategy for the design of two-dimensional vdW TMD device systems.

Miniaturized Fabry-Perot standing-wave resonators and whispering-gallery travelling wave resonators constitute foundational building blocks for photonic integrated circuits. While both architectures offer transformative potential through high quality factors and dual-polarization operation, integrated Fabry-Perot resonators face significant challenges in simultaneously achieving ultra-high Q-factors and broadband thermal tunability for fundamental transverse magnetic (TM0) and transverse electric (TE0) modes within a compact footprint-primarily due to polarization-dependent losses in conventional chip-scale reflectors. Here, we overcome this limitation by demonstrating an integrated silicon nitride dual-polarization micro-Fabry-Perot resonator with polarization-insensitive Sagnac loop reflectors and multimode waveguides to effectively suppress losses and enable high-performances for both fundamental transverse magnetic (TM0) and transverse electric (TE0) modes. The device achieves record loaded quality factors of 2.38 x 106 (TM0) and 3.48 x 105 (TE0) respectively and intrinsic quality factors will be even higher. Moreover, both two modes are tuned over the whole free spectral range of around 0.111 nm (TM0) and 0.112 nm (TE0) with the thermal tuning efficiencies of approximately 1.04 pm/mW (TM0) and 1.24 pm/mW (TE0). These advances establish a new benchmark for compact, highperformance dual-polarization resonators in optical sensors, nonlinear and integrated quantum photonics.

Integrated photonic circuits are foundational for versatile applications, where high-performance traveling-wave optical resonators are critical. Conventional whispering-gallery mode microresonators (WGMRs) confine light in closed-loop waveguide paths, thus inevitably occupying large footprints. Here, we report an ultracompact high-loaded Q silicon photonic WGMR in an open curved path instead. By leveraging spatial mode multiplexing, low-loss mode converter-based photonic routers enable reentrant photon recycling in a single non-closed waveguide. The fabricated device achieves a measured loaded Q-factor of 1.78 × 105 at 1554.3 nm with a 1.05 nm free spectral range in a ultracompact footprint of 0.00137 mm2-6× smaller than standard WGMRs while delivering 100× higher Q-factor than photonic crystal counterparts. This work pioneers dense integration of high-performance WGMR arrays through open-path mode recirculation.

While hexagonal boron nitride (hBN) hosts promising room-temperature quantum emitters for hybrid quantum photonic circuits, scalable deterministic integration and insufficient brightness alongside low photon collection and coupling efficiencies remain unresolved challenges. We present a femtosecond laser nanoengineering platform that enables the site-specific generation of hBN single-photon source (SPS) arrays. First-principles density functional theory (DFT) calculations and polarization-resolved spectroscopy confirm the atomic origin of emission as interfacial defects at hBN/SiO2 heterojunctions. To transcend the intrinsic limitations of dielectric confinement, we introduce a chip-compatible hybrid optical antenna architecture that synergistically combines Purcell-enhanced spontaneous emission with directional far-field collimation. This photonic engineering strategy achieves a 5-fold brightness enhancement while elevating the single-photon saturation count rate from 0.47 Mcounts/s on bare SiO2/Si substrates to 3.08 Mcounts/s, maintaining exceptional single-photon purity (g(2)(0) = 0.14 ± 0.07) and polarization contrast (>90%). The demonstrated integration of deterministic emitter generation with planar quantum nano-optics offers a universal approach to engineering quantum light-matter interactions in van der Waals heterostructures, enabling scalable quantum networks and hybrid two-dimensional (2D) material-based photonic integrated circuits.

Rolling two-dimensional materials into one-dimensional nanoscrolls introduces curvature, chirality and symmetry breaking, enabling emergent properties. Conventional methods relying on external driving forces, however, exhibit poor control, low yield and limited reproducibility. Here we report spontaneous scrolling in polar van der Waals materials via an electrochemical intercalation/exfoliation process, enabling scalable nanoscroll production. This self-rolling is driven intrinsically by out-of-plane electric polarization (P⊥), where the magnitude of P⊥ is modulated by the intercalant size. Validated across eight polar materials, this approach achieves virtually 100% yield and reproducibility with defined scrolling direction, surpassing external driving force limitations. The nanoscrolls exhibit layer-independent inversion symmetry breaking and coherently enhanced second-harmonic generation, exceeding two-dimensional flakes by ~100-fold and rivalling leading two-dimensional nonlinear materials. Electrochemical initiation further facilitates metal-ion co-intercalation, yielding ten hybrid nanoscroll architectures. These findings establish a scalable route to create one-dimensional nanostructures and hybrid heterostructures, paving the way for designer quantum solids and van der Waals superlattices in quantum nanodevices.

We investigate the photocarrier properties of heterostructures (HSs) formed by WS2 and ozone-irradiated graphene (OI-graphene), with a focus on the impact of ozone irradiation. Photoluminescence and Raman spectroscopy reveal a pronounced doping effect induced by ozone irradiation on the graphene layer. Transient absorption measurements demonstrate a substantial suppression of charge transfer efficiency across the interface in the presence of ozone molecules. Spatially resolved pump-probe measurements further show a significant reduction in the diffusion coefficient of photocarriers in WS2 on OI-graphene compared to that of individual WS2 monolayers. The slower diffusion suggests enhanced spatial separation of electrons and holes in the WS2 layer, induced by a built-in electric field at the interface. This effect arises from the combined influences of doping and dielectric property changes caused by ozone molecules. These findings highlight the critical influence of ozone irradiation on graphene and HS interfaces, offering valuable insights for the design of future graphene-based two-dimensional HSs.

Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achieving an ultrahigh 2D hole density of 1.49 × 1014 per square centimeter, far exceeding the maximum possible electrostatic doping limit imposed by typical dielectric breakdown. The highly efficient hole-doping enables high-performance p-type 2D transistors with an ultralow contact resistance of ~0.041 kilohm micrometers and a record-high ON-state current density of ~2.30 milliamperes per micrometer.

Memristors are pivotal for energy-efficient artificial intelligence (AI) hardware, potentially eliminating the von Neumann bottleneck by in-memory realizations of synaptic operations. However, the dynamic requirements of neuromorphic computing on specific electronic devices pose reliability and universality challenges, limiting progress toward more widely applicable computing platforms. Here, a 2D high-kappa dielectric-based memristor with the desired reconfigurable resistive switching behavior is successfully demonstrated. Utilizing a few layered Bi2SeO5 possessing excellent electrical insulation properties as the switching medium, the device features a low operating voltage (approximate to 0.5 V), low operation current (10 pA), long memory retention (>103 s), large switching window (approximate to 108), steep slope (<1 mV dec-1), fast switching speed (40 ns), and low energy dissipation (approximate to 1 pJ). The switching characteristics between volatile and non-volatile memory can be achieved on demand by regulating compliance currents, offering the possibility of implementing multiple neural computational primitives. A simulated convolutional neural network (CNN) based on long-term potentiation/depression (LTP/D) achieves 85% accuracy in complex image recognition. Furthermore, MNIST and fashion-MNIST recognition with built reservoir computing (RC) utilizing volatile behaviors reach 97% and 85% accuracy, respectively. This work opens new opportunities for 2D high-kappa dielectrics in next-generation AI hardware with enhanced energy efficiency and computational versatility.

Photodetectors with tunable polarization sensitivity play a significant role in decoding signals in optical communications, extracting polarization‐encrypted information, and the environmental monitoring of polarization variations. Metasurfaces are widely used in polarized photodetectors, while the responses for different polarization incidences follow a determinable and consistent correspondence. In this paper, an electrically tunable polarization photodetector composed of MoTe 2 and gold metasurface is proposed for on‐chip polarization‐sensitive near‐infrared (900–1200 nm) detection. Through contact engineering and electro‐tuning, highly‐tunable Schottky barriers are achieved. This enables the modulation of photoelectric conversion via the excitation of surface plasmon polaritons, which in turn allows for continuous adjustment on the degree of linear polarization of a settled metasurface ranging from 0.2 to an ultimate value of 1.0. The results outline a paradigm to achieve a polarization‐dependent electrically tunable response, which is promising for on‐chip information processing in integrated optics.

Elemental substitution is a traditional step to fabricate transparent conductive oxides (TCO). In the case of the most popular TCO, In x Sn[Formula: see text]O (ITO), further improvement of the material is limited by the segregation of Sn, and from the viewpoint of economy, the limited reserve of rare elements like indium makes these TCOs expensive and unsustainable. Here we demonstrate an excellent alternative, ultrathin tunable visible and near-infrared transparent conductive films fabricated with correlated metal oxides, strontium niobate and vanadate. The optical and electronic transport properties of these correlated metal oxide epitaxial thin films can be tuned by engineering the d-orbital overlap with the 2p electrons of the oxygen by changing the ratio of niobium (4d) and vanadium (3d) atoms. The transparent edges at both ultraviolet and near infrared sides have a blueshift with increasing concentration of niobium, which can be attributed to increased band overlap and a resultant decrease in correlation. The resistivity increases in the alloy reaching a maximum near where niobium and vanadium are at 50% concentration due to the decrease of translational symmetry of the lattice. The optimum thickness for the best figure of merit as a TCO of this correlated system is one tenth (10[Formula: see text]nm) that of ITO (100[Formula: see text]nm).

Metaphotonics uses nanoengineered materials to manipulate the electromagnetic fields and is of use in multidimensional optoelectronic applications such as Stokes detection. Machine learning algorithms are often used in the device design and post-signal processing of these systems. During post-signal processing, such algorithms can be used to reconstruct the physical quantities from multiparameter optical responses, typically via inversion of the system’s response function. However, when response channels are coupled or signal amplitudes vary greatly, post-detection decoding becomes difficult due to potential information loss. Here we report a metaphotonic photodetector capable of direct Stokes quantification. We use channel-level decoupling to design independent photovoltage channels for each Stokes parameter with minimal crosstalk. The device responsivity matrix achieves a near-unity condition number, reducing reliance on complex algorithmic post-processing. Our approach illustrates how device-level optimization can enhance detection capabilities in parallel with algorithmic techniques. Using channel-level decoupling to design independent photovoltage channels for each Stokes parameter with minimal crosstalk, a metaphotonic photodetector can be created that provides direct Stokes quantification.

The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. Two-dimensional (2D) heterostructures provide an alternative path toward this goal, yet despite continued efforts, their performance has not matched that of low-temperature HgCdTe photodetectors. Here, we push the detectivity and response speed of a 2D heterostructure-based mid-infrared photodetector to be comparable to, and even superior to, commercial cooled HgCdTe photodetectors by utilizing a vertical transport channel (graphene/black phosphorus/molybdenum disulfide/graphene). The minimized carrier transit path of tens of nanometers facilitates efficient and fast carrier transport, leading to significantly improved performance, with a mid-infrared detectivity reaching 2.38 × 1011 cmHz1/2W−1 (approaching the theoretical limit), a fast response time of 10.4 ns at 1550 nm, and an ultrabroadband detection range spanning from the ultraviolet to mid-infrared wavelengths. Our study provides design guidelines for next-generation high-performance room-temperature-operated mid-infrared photodetectors. Here, the authors report the realization of room-temperature broadband mid-infrared detectors based on a van der Waals heterostructure with a vertical transport channel, exhibiting specific detectivity and response times comparable or superior to those of commercial cooled HgCdTe photodetectors.

New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next‐generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high‐performance photodetector based on the Bi 2 O 2 Se/Ta 2 NiSe 5 heterojunction, which simultaneously achieves high responsivity (>10 3 A W −1 ) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 10 13 Jones at 633 nm and 1.8 × 10 10 Jones at 1550 nm. Furthermore, high‐resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next‐generation photodetectors with comprehensive high performance.

Short-wave infrared (SWIR) polarized detectors, renowned for their high-resolution imaging and atmospheric penetration capabilities, are pivotal for advancing autonomous navigation, industrial automation, and space communications. The responsivity of commercial InGaAs photodetectors (typically ∼1 A/W at 1550 nm) serves as a key benchmark for high-performance detection at this wavelength. However, achieving higher responsivity and potentially streamlining the fabrication process remain research goals. Herein, we present a PdSe2/Bi2O2Se heterostructure detector that synergistically utilizes the effective separation of photogenerated electron–hole pairs and photogating effect to achieve breakthrough performance in SWIR. A high responsivity of 21 A/W, an external quantum efficiency of 1680%, and a specific detectivity of 5.7 × 109 Jones at 1550 nm were demonstrated. Simultaneously, it achieves a fast response time (131/492 μs) and polarization-sensitive functionality. High-resolution SWIR and polarized light imaging were also demonstrated. These findings outline an approach to developing miniaturized, room-temperature SWIR detectors with high-performance metrics.

We investigated the optical and photocarrier properties of monolayer MoWS2 alloys with graded composition. The samples were synthesized via a two-step chemical vapor deposition method. Photoluminescence spectroscopy revealed a composition-tunable optical bandgap, while the evolution of the trion binding energy demonstrated a pronounced doping effect across the alloy. Power-dependent photoluminescence and transient absorption measurements indicated a significant reduction in exciton-exciton annihilation in the alloy by an order of magnitude, illustrating strong exciton localization. These findings highlight the critical influence of doping and localization effects in determining the photocarrier and optical properties of transition metal dichalcogenide (TMD) alloys. The suppression of exciton-exciton annihilation results in a power-independent photoluminescence quantum yield, suggesting these alloys as promising candidates for optoelectronic applications under high excitation conditions, surpassing the performance limitations of pristine transition metal dichalcogenides. (c) 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

Perpendicular grating couplers are essential for high-density optical interconnects driven by the vast development of machine learning and artificial intelligence accelerators. To meet these demands, a high-performance perpendicular grating coupler is inversely designed on the hybrid silicon-thin-film lithium niobate (Si-TFLN) platform. The proposed structure achieves a sub-dB perfectly vertical fiber-to-waveguide coupling through cascaded bi-layer chirped silicon gratings integrated with an adiabatic Si-TFLN interposer. We apply the fundamental physics law to effectively prune redundant parameters and leverage the Universal Approximation Theorem to inversely design the grating. The interposer subsequently converts the light from the silicon into the TFLN waveguide with negligible losses. Our method is validated with the finite-difference time-domain methods and the numerical results reveal that the overall CE is-0.86 dB at 1550 nm with a 3-dB bandwidth of 45 nm for the perpendicular (0 degrees) incidence in a quasi-transverse electrical mode. Our work presents potential avenues for high-density optical interfaces in TFLN photonic circuits.

We demonstrate a chip-scale spectrometer based on subwavelength grating microring resonators, achieving a bandwidth of 114 nm and a resolution of 40 pm. Using a spectral reconstruction algorithm, the resolution is enhanced to 10 pm.