Nanofluidic memristors, exploiting ion transport in nanochannels, hold promise for neuromorphic applications. A planar architecture is particularly desired for scalable integration with established micro- and nanofabrication technologies. Here, using the Poisson-Nernst-Planck framework, we theoretically propose planar nanofluidic memristors enabled by surface charge gradient, providing an alternative to the commonly used geometrically asymmetric architectures. The resulting memristive behavior is governed by a diffusion-mediated secondary enrichment effect. By systematically solving the PNP equations, we obtain the scaling of the characteristic memory time across the parameter space. We also reveal that the memory effect is related to the first-order moment of surface charge, for arbitrary charge profiles. These results provide a theoretical basis for rationally designing and optimizing planar nanofluidic memristors through spatially patterned surface charge.

MA as fluorinated electrolyte cosolvent breaks compact solvation structure for faster Li + transport, while constructing elastic EEIs. MA-FBE enables stable operation of NCM811 LMBs at 4.8 V high voltage and over a −70 to 60 °C wide temperature range.

The silicon-based field-effect transistor (FET) is approaching the physical limits for the prominent short-channel effects and the sequent leakage currents under the conventional paradigm. Here, we propose a momentum-dependent field-effect transistor (MD-FET) to address this issue, in which a monolayer 2D semiconductor is sandwiched by two cross 1D carbon nanotube electrodes. The MD-FET enables a perfect off state, as the elastic tunneling is forbidden by the momentum mismatch between the cross 1D contacts. It can also access a substantial on state, because the momentum mismatch can be compensated by the electron-phonon scattering in a 2D channel. The MD-FET with sub-1-nm channel thus exhibits high on/off ratios of ~107, which breaks through the theoretical limit on the short-channel effect. The MD-FET opens up a previously unknown paradigm to further scale down transistors beyond silicon and inspires a promising solution for the post-Moore era.

Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe2, the barristor can not only be reconfigured as an n-or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 104 for the transistor and a rectifying ratio of 105 for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.

By using superaligned carbon nanotube (SACNT) macrostructures as reinforcements, the one-step homoepitaxial growth of SACNT/graphite composites was achieved with a home-built experimental setup at temperatures as high as 2600 degrees C. Compared with traditional furnace heating method, this approach offers the advantages of increased convenience, high throughput and energy efficiency. This high-temperature homoepitaxy strategy was applied to three kinds of structures: SACNT yarn, SACNT film, and SACNT array. Because of the high temperature which exceeded 1800 degrees C, the samples after high-temperature homoepitaxy showed increased G/D peak area ratios in the Raman spectra, enhanced mechanical properties and improved thermal properties, all of which can meet the requirements of various applications. (C) 2020 Elsevier Ltd. All rights reserved.

Three dimensional TiO2-Au cross-nanoporous structure (3D TiO2-Au CNS) as an efficient photoelectrocatalytic system was fabricated using superaligned carbon nanotube films as etching masks and electron-beam evaporation. The 3D TiO2-Au CNS exhibited a broad absorption band in the visible region, and the incident photon-to-current conversion efficiency of 3D TiO2-Au CNS/Ti electrode was 3-4 times higher than that of pure TiO2 electrode. The photocurrent density of the 3D TiO2-Au CNS device was 0.079 mA cm(-2) at 0 V us. Ag/AgCl with a solar irradiance of 100 mW cm(-2). This developed preparation method was simple, of high flexibility and can be adopted for mass production due to its low cost and good compatibility with other processing technologies. The 3D TiO2-Au CNS and its preparation method have important value in design of photoelectrocatalytic system for research and practical applications, which may have a potential utility in photocatalytic and other photoelectrocatalytic reactions. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

It is of great importance to develop new micro-actuators with high performance by optimizing the structures and materials. Here we develop a VO2/Al2O3/CNT eccentric coaxial nanofiber, which can be potentially applied as a micro-actuator. The specific eccentric coaxial structure was efficiently fabricated by conventional thin film deposition methodology with individual CNT templet. Activated by thermal and photothermal stimuli, the as-developed actuator delivers a bidirectional actuation behavior with large amplitudes and an ultra-fast response, ∼ 2.5 mS. A tweezer can be further made by assembling two such nanofibers symmetrically onto a tungsten probe. Clamping and unclamping can be realized by laser stimulus. More experimental and simulation investigations indicated that the actuation behaviors could be attributed to the nanostructured eccentric coaxial geometry, the thermal coefficient mismatch between layers and the fast phase transition of VO2. The micro-actuators will have potentials in micro manipulators, nanoscaled switches, remote controls and other autonomous systems. Furthermore, a large variety of coaxial and eccentric coaxial nanofibers with various functions can also be developed, giving the as-developed methodology more opportunities.

Metallic nanostructures can enhance light-matter interaction arising from the surface plasmonic resonances,which is highlight on optics for many applications.A tunable optical property can be induced by plasmonic resonance,leading to the significant electromagnetic field enhancement,as well as the position of the "hot spot" at a tiny nanogap.Analogue of the diffractive optics,an alternative method of multiscale cascaded field enhancement with a simple metallic nanostructure,double stacked nanocone (DSC),was proposed in the article.In detail,a tunable hybrid mode was achieved from the strong interference between a fundamental plasmonic cavity mode and a plasmonic gap mode.Furthermore,it led to a far-field optical response at a certain wavelength.The position of the hot spots can also be mounted on the top surface of the DSC nanostructure.Additionally,a technique of mask reconfiguration was developed to precisely fabricate the multiscale DSC nanostructure,which can benefit to construct the necessary three steps in the nanostructure.The experimental results also provide a substantial evidence to demonstrate the art-of-state of the multiscale cascaded field enhancement,as well as the technique of nanofabrication.

纳米压印光刻技术具有低成本、高效率、大面积、高分辨、多尺度、良好的工艺兼容性等特点,可用于亚波长光电子器件的研究.提出了硅水合物(HSQ)/聚丙烯酸甲酯(PMMA)双层胶室温纳米压印工艺方法,研究并解决了有关压印光刻胶剩余底膜和纳米图形保真性刻蚀转移的两个关键工艺技术问题.以制备特定需求的石英纳米光栅器件为目标,经过工艺优化,成功地实现了周期200 nm、占空比0.5、深宽比5∶1、栅线侧壁垂直且粗糙度小于3 nm的高分辨率亚波长光栅的制备.所提出的双层胶刻蚀方法,有望拓展到纳米标准物质和芯片级光学频率梳器件等对侧壁陡直和粗糙度有严格要求的应用领域.

A hybrid film of carbon nanotubes (CNTs) and silver nanowires (AgNWs) that could be regarded as a parallel circuit of CNTs and AgNWs was developed, which exhibited a low sheet resistance of 23 Ω/sq and transmittance at 550 nm of 93%. The relatively high, intertube contact resistance of CNTs was reduced by the metallic AgNWs, which acted as bridges to aid carrier transport between CNTs. A hybrid film of CNTs and AgNWs was used as a transparent conductive layer in an AlGaInP light-emitting diode (LED). Including the hybrid film in the LED increased the optical output power by about 1.6 times and decreased the red shift of emission wavelength from 13.11 to 9.7.