In this work, a novel inversion-type ferroelectric memory featuring a TiAlOx/HfO2-ZrO2 superlattice (SL) structure on germanium is proposed, demonstrating nondestructive readout and industrial-grade endurance. The optimized device achieves a high capacitance modulation ratio (C-HCS/C-LCS) exceeding 14, with stable four-state operation sustained over 10(5) cycles and two-state endurance extended to 10(8 )cycles at 50 kHz. Key innovations include a TiO2-induced TiAlOx interlayer that suppresses interfacial oxygen-vacancy migration and an engineered HfO2/ZrO2 SL that promotes a more uniform distribution of defects within the ferroelectric stack. Low-frequency noise analysis and depth-resolved trap profiling corroborate the reduced interfacial defect density and the more uniform defect landscape, together explaining the improved endurance and reliability. The proposed devices also exhibit reduced read voltage requirements while enabling four-state operation, highlighting their potential for low-power neuromorphic hardware and energy-constrained edge computing applications.

We report the preparation of flexible scintillation films based on Ag6N6S12C54H48 (Ag-R-4PTT) clusters formed by in-situ crystallization within a polymer matrix. The Ag-R-4PTT clusters exhibit thermally activated delayed fluorescence with a high photoluminescence quantum yield of 93.1%. Controlled crystallization yields microcrystalline clusters in poly(vinylpyrrolidone)/thermoplastic polyurethane matrices with excellent radioluminescence performance and high structural stability, leading to a light yield of 33 400 photons MeV-1 and an X-ray detection limit down to 231 nGyair s-1. The scintillation films retain high mechanical flexibility, optical transmittance, and water-resistance, achieving a spatial resolution of 21 lp mm-1 for X-ray imaging. This study introduces a general strategy to stabilize Ag clusters via coordination engineering as well as in-situ crystallization, offering a promising platform for flexible radiation detection and high-resolution imaging.

Omnidirectional X-ray detection is important for applications such as high-energy astrophysics and environmental safety monitoring. However, conventional approaches to omnidirectional X-ray detection, based on solid-state flat-panel detectors or gas/liquid-state spherical detectors, are often hindered by fabrication complexity, insufficient omnidirectional response, or limited portability. Herein, we present a portable solid-state omnidirectional X-ray detector (ODXD) based on a spherical glass scintillator composed of (CPTP)2MnBr4 (CPTP = cyclopropyltriphenylphosphine). From a crystallographic perspective, the cyclopropyl group in triphenylphosphine cation plays a critical role in modulating the phase transition of (CPTP)2MnBr4. This molecular design not only lowers melting temperature (170°C), enabling device fabrication via a low-temperature melt-quenching process, but also provides a sufficiently high glass transition temperature (61°C) to ensure operational stability. From a device perspective, the ODXD based on spherical (CPTP)2MnBr4 glass offers excellent omnidirectionality and registers an X-ray response limit of 0.49 µGyair s-1, which is 11-fold lower than the regular medical diagnostic dose rate (5.5 µGyair s-1), demonstrating exceptional capabilities for monitoring omnidirectional X-ray sources with high sensitivity. Given the high processability of organic-inorganic glasses and the simplicity of their fabrication, our findings provide a viable solution for constructing portable omnidirectional optical detectors toward advanced sensing and photonic applications.

In this paper, we proposed a novel programmable diode fabricated with a standard 0.18μm CMOS process through an N-well and additional N+ region process design to enhance its programmability for the high-density one-time-programmable (OTP). The anti-fused state and fused state can be achieved by employing program voltage under the condition of current compliance, respectively. This device features a large storage window about 105, which can effectively prevent the incorrect programming, and a simple structure friendly for CMOS circuit integration. The write and read of the 2×2 memory array and characteristics of the large-scale array constructed using this device are also analyzed in detail. Experimental results demonstrate its feasibility for the application field of high-density OTP memory arrays.

Hybrid metal-halide scintillators are promising for X-ray imaging, but direct fabrication of patterned arrays with high spatial precision remains challenging. Here, we report a laser-induced in situ crystallization strategy for constructing pixelated scintillator arrays from a melt-processable manganese(II) bromide glass precursor, (BuTPP)2MnBr4 (BuTPP+, butyltriphenylphosphonium). The (BuTPP)2MnBr4 undergoes low-temperature glass formation and can be selectively recrystallized under femtosecond laser irradiation, enabling programmable spatial patterning. Structural analyses confirm the recovery of the crystalline phase after laser writing, while photophysical measurements show markedly enhanced photoluminescence and radioluminescence compared with the glassy state. Benefiting from efficient X-ray-to-light conversion and precise array definition, the patterned scintillators exhibit a high light yield of 24,600 photons MeV−1, an X-ray detection limit of 4.89 µGyair s−1, and a spatial resolution of 10 lp mm−1. This work establishes the laser-induced in situ crystallization strategy as an effective route to integrated hybrid scintillator arrays and offers a versatile platform for customizable and low-temperature processed X-ray imaging devices for imaging uses.

Ferroelectric random access memory (FeRAM) is a promising candidate to further dynamic random access memory (DRAM) scaling. However, the design of the FeRAM bit cell is nontrivial as the ferroelectric device model is not well supported by electronic design automation (EDA) tools. Modern integrated circuit design heavily depends on circuit-level SPICE simulators that integrate compact device models through modified nodal analysis (MNA) representation. This article presents a novel MNA-based SPICE simulation method for ferroelectric device models, targeted at the design space exploration of FeRAM bitcells. Furthermore, this article provides a co-design procedure for FeRAM bitcells and sense amplifiers via a comprehensive case study.

Organic-inorganic hybrid copper halides, with exceptional optoelectronic properties encoded in their highly tunable crystal structure, are emerging as promising candidates for next-generation scintillators. However, achieving both high light yield and fast luminescence decay in copper halides remains a significant challenge, limiting their application in real-time X-ray imaging. Here, a simple yet effective ion exchange approach is developed to enable rapid conversion of (MeEn)2Cu4Br6 (MeEn = 3-methylbut-2-enyl(triphenyl)phosphanium) to (MeEn)2Cu4I6, resulting in a near-unity photoluminescence quantum yield (PLQY), a 1.7-fold increase in light yield (39700 photons MeV-1), and a 15-fold reduction in luminescence decay time (2.4 mu s). Mechanistic investigations reveal that the enhanced scintillation properties arise from reduced lattice distortion, appropriately weakened electron-phonon coupling, and strong spin-orbit coupling induced by the heavy iodine atom. Beyond (MeEn)2Cu4X6, this approach is applicable to a variety of copper halides, leading to consistent improvements in photophysical performance. Finally, by embedding (MeEn)2Cu4I6 with a polymer matrix, the resulting scintillation film is further entailed with desired flexibility and water resistance, demonstrating its capability in static, dynamic, curved, and underwater X-ray imaging.

In this work, the oxide-based programmable diodes (PDs) with structure of TiN/HfO2/Si/Al are fabricated, and its electron transport mechanisms are investigated. Electrical measurements results depicted that the conduction and rectification performance of oxide-based PDs are mainly controlled by the interface between oxygen vacancies (VOs) consisted filament and semiconductor electrode. The local density of state in filament and band-bending of the PDs are calculated by first-principal simulation. The electron transport in oxide PDs is dominated by Poole-Frenkel emission under forward bias, while under negative bias, the PDs behave like a reverse Schottky-diode. These mechanisms research is necessary for device optimization and circuit design of oxide-based PDs.

Despite the rapid evolution of perovskite light-emitting diodes (PeLEDs), achieving high brightness while mitigating efficiency roll-off remains a significant challenge, primarily arising from grain-size-induced Auger recombination and imbalanced carrier injection. Here, we demonstrate an interfacial engineering strategy by using dimethylphenethylsulfonium iodide (DMPESI) to concurrently regulate crystal growth and interfacial electronic states. The sulfonium cation, devoid of N-H protons and thus incapable of forming hydrogen bonds, engages in electrostatic anchoring with both FA+ and undercoordinated Pb2+ sites. This not only suppresses the formation of deep non-radiative traps but also facilitates an intermediate phase that promotes secondary grain growth. The DMPESI-modified interfacial layer minimizes leakage current and optimizes charge injection balance under high-injection conditions. The DMPESI-modified PeLED delivers a peak EQE of 27.0%, a high radiance of 782.5 W sr-1 m-2 and a T 50 of 627.8 h (20 mA cm-2), maintaining an EQE above 20% even at a current density of 1000 mA cm-2.

Hardware security is critical in modern information technology, particularly with the exponential growth of in-memory AI inference scenarios and neuromorphic computing. Physical Unclonable Functions (PUFs) have become a key solution for securing these devices. In this paper, we propose a PUF design that uses Ferroelectric Random-Access Memory (FeRAM) as the entropy source. FeRAM, known for its non-volatility, high read/write cycle endurance, and low power consumption, offers distinct advantages for PUF implementation. Evaluated in 180 nm CMOS technology, the results show that the 1T1C FeRAM-based PUF scheme we proposed exhibits low power consumption and high robustness and achieves a uniformity of 49.1% and a reliability of 97.6%. With a dataset of 1M Challenge-Response Pairs (CRPs), the prediction accuracy of the proposed PUF under Covariance Matrix Adaptation Evolution Strategy (CMA-ES) algorithm-based attacks is 78.1%, demonstrating a 19% reduction compared to SRAM-based PUFs.

In this work, the frequency-dependent accelerated degradations (FDADs) mechanism in the novel 3-D trench hafnium oxide (HfO2)-based ferroelectric random access memory (FeRAM) has been comprehensively analyzed. The increased delay time (t(d)) between bipolar switching pulses is found to intensify remanent polarization (P-r) degradation and induce shifts in the coercive electric field (E-c). As the stress voltage decreases from 2.5 to 1.5 V, the P-r degradation is exacerbated, attributed to insufficient wake-up, while the E-c shift is correspondingly reduced, attributed to the mitigated imprint. Besides, the pulse operation method with a balanced t(d) effectively suppresses the FDAD effect. Based on the experimental observations, the mechanism of the FDAD can be attributed to the combined action of bipolar-cycling induced oxygen-vacancy (V-O) generation, delay-time-dominated V-O redistribution, and V-O(2+) related dipole pinning and imprint effects arising from electron de-trapping. Finally, a guideline for the FDAD recovery strategy is proposed for device optimization.

Low-dimensional lead-free metal halides have emerged as promising luminescent materials owing to their isolated structural units, soft lattices, and pronounced electron-phonon coupling that favor self-trapped exciton (STE) emission. Herein, we report efficient and compositionally tunable photoluminescence in zero-dimensional (0D) Cs2InClxBr5-x center dot H2O crystals through synergistic Sb3+ doping and halogen substitution. Sb3+ incorporation activates intense broadband yellow emission in Cs2InCl5 center dot H2O by introducing localized emissive centers associated with dopant-mediated STE recombination. Subsequent Br- substitution continuously regulates the local coordination environment and lattice distortion, enabling switchable broadband emission from yellow to orangered. This halogen-dependent emission modulation provides mechanistic insight into exciton localization and radiative recombination in hydrated 0D indium halides. Benefiting from their lead-free composition, highefficiency broadband emission, and flexible color tunability, Sb3+-activated Cs2InClxBr5-x center dot H2O crystals represent a versatile platform for solid-state lighting and optical encoding applications.

This work presents a 1-transistor (1T) synapse-based analog multiply-accumulate (MAC) acceleration macro, fabricated in standard 55-nm CMOS technology. A hot carrier injection (HCI)-based weight programming method is employed to realize analog nonvolatile weight programming in one transistor. To compensate for the nonlinearity of the 1T synapse, a voltage bias optimization method is proposed. A reduced-weight neural network evaluation platform is further demonstrated to measure the performance of the 1T synapse-based MAC macro. The MAC macro achieves an area efficiency of 73.9 TOPS/mm2 and an energy efficiency of 115.6 TOPS/W.

ABSTRACT Low‐dimensional Cu(I)‐based metal halides are attractive luminescent materials for optoelectronics and radiation detection, but achieving precise control over their multimodal emission and scintillation performance remains challenging. Here, the acetate anion is introduced into zero‐dimensional Cs 3 Cu 2 I 5 to engineer excitation‐wavelength‐dependent emission and scintillation. The acetate‐doped Cs 3 Cu 2 I 5 crystals show dual‐band photoluminescence, switching from blue to green emission with increasing excitation wavelength. Spectroscopic analyses and theoretical calculations suggest that this behavior is most plausibly associated with the coexistence of host self‐trapped excitons (STEs) and dopant‐induced extrinsic STEs. Acetate doping also increases the radioluminescence output and improves the scintillation response of Cs 3 Cu 2 I 5 crystals, affording a high light yield of 57 600 photons MeV −1 , a low detection limit of 166.6 nGy air s −1 , and a high spatial resolution of 18 lp mm −1 in flexible scintillator films. This work establishes organic‐anion doping as an effective route to modulate the excited‐state landscape and scintillation behavior of full inorganic Cu(I)‐based halides and expands their opportunities in light‐emitting devices and high‐energy radiation detection.

We propose a novel ferroelectric field-effect transistor (FeFET)-based ternary content addressable memory (TCAM) that exploits the gate-induced drain leakage (GIDL) effect to achieve ambipolar functionality. This design introduces the first FeFET TCAM with symmetric source/drain ohmic contacts, delivering significant advantages in cell scalability and fabrication simplicity, thereby establishing a foundation for large-scale TCAM array integration. The device's matching functionality was validated under both static and transient conditions, exhibiting a reliable noise margin and a current ratio of approximately 10, maintained after over 4 x 10(3) query cycles or 104 s of query delay. This strategy paves the way for the next generation of high-throughput, large-scale TCAM arrays.

Compressive sensing (CS)- and deep learning-based sparse synthetic aperture radar (SAR) imaging methods significantly reduce data transmission and storage requirement. However, as required by CS, these methods generally employ the random down-sampling strategy. Thus, the radar system must be equipped with high-speed analog-to-digital converters capable of sampling at rates required by the Nyquist sampling theorem. To directly decrease the sampling rate and the amount of data at the receiver, this paper proposes a deep unfolding network (DUN) for sparse SAR imaging from uniformly down-sampled data in the range domain. Specifically, an AXB-based linear matrix model for stripmap SAR is first presented to fit the image degradation process from fully-sampled data to uniformly down-sampled data, which mainly induces global aliasing and amplitude attenuation. By reversing this model, we propose a linear residual matrix (LRM) regularization to suppress aliasing and recover amplitude. Based on the inverse imaging operator, a sparse SAR imaging optimization problem is designed for uniform down-sampling with the LRM regularization and the convolutional neural network (CNN)-based regularization. These two constrain the reconstruction of global and local features, respectively. Finally, we unroll the optimization into a two-stage DUN that follows a sequential global-to-local recovery scheme. Experiments on simulated and real stripmap SAR raw data, in both qualitative and quantitative terms, verify the effectiveness of the proposed network for sparse SAR imaging with uniform down-sampling in the range dimension for the stripmap mode.

We investigated the device performance of gate-all-around and channel-all-around structures with a 3D TCAD simulation. Through theoretical analysis, we found that the channel-all-around structure exhibits a larger MW and a smaller interface electric field. Additionally, simulations verified the advantages of the channel-all-around structure and the impact of different design rules on device performance. It revealed that the channel-all-around structures have a larger MW, and lower interface layer electric field than gate-all-around structures with same structure parameters, as the structures affect voltage division across the HZO layer.

Correction for 'Chromium-activated phosphors: from theory to applications' by Shengqiang Liu et al., Chem. Soc. Rev., 2026, 55, 1954-1998, https://doi.org/10.1039/D5CS00957J.

In this work, we experimentally investigated the variation behavior of HfO2-based 3D trench ferroelectric random access memory (FeRAM) under different voltage cycling conditions. The remanent polarization (Pr) and coercive field (Ec) were extracted to evaluate device-to-device (D2D) and cycle-to-cycle (C2C) variations. The planar-dominated capacitors showed a gradual decrease in variation when the cycling voltage and number increased. In contrast, the trench-dominated capacitors showed irregular changes during cycling. To understand the cause, cross-sectional transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS) analyses were performed. The results revealed that the ferroelectric layer at the trench sidewall was thinner and suffered from strong interdiffusion between the electrode and ferroelectric materials. These structural and compositional differences degrade the ferroelectric quality and lead to larger variation in trench-dominated devices. This work clarifies the relationship between cycling behavior and variability in 3D FeRAMs and provides guidance for improving their reliability through interface and material engineering.