Rolling-structured triboelectric nanogenerators (RS-TENGs) hold great potential for marine wave energy harvesting owing to their structural simplicity, low-threshold driving capability, and suitability for mass production. To overcome charge density limitations in conventional binary interfaces, this work proposes a triboelectric charge-enhanced RS-TENG (TCE-TENG) by introducing a polyoxymethylene (POM) sidewall friction layer to construct a ternary triboelectric interface. Benefiting from the enhanced triboelectric polarity of POM, this design significantly boosts surface charge density, achieving an average volumetric power density of 21.3 W m-3 in controlled tests. To address the impedance mismatch between the TENG's high internal impedance and practical electronic loads, a compact power management circuit (PMC) is developed, dramatically improving capacitor charging efficiency. Under water wave conditions, the TCE-TENG maintains a robust average power density of 8.1 W m-3. When integrated with the PMC, it successfully powers an array of ten thermo-hygrometers; furthermore, it sustains a wireless water level alarm system in intermittent operation mode. This research offers a scalable technological foundation for advancing triboelectric nanogenerators in wave energy harvesting and self-powered marine sensing.

Gallium nitride semiconductors are essential for advanced electronics, but realizing their potential requires robust normally-off devices. The P-GaN gate high-electron-mobility transistor is the dominant architecture, yet its threshold voltage is restricted to less than 2 volts by the low activation efficiency of magnesium acceptors. Here, we demonstrate atomically confined insertion to overcome this bottleneck. This technique creates self-terminating, two-dimensional magnesium layers within a complex heterostructure, inducing localized strain and polarity inversion. The resulting atomic-scale polarization fields increase the average effective hole concentration several-fold. When integrated into a P-GaN gate high-electron-mobility transistor, atomically confined insertion boosts the threshold voltage from 1.5 to 4.3 volts while mitigating the degradation in transconductance and output current typical of conventional methods. Furthermore, this approach substantially suppresses the current collapse effect via an efficient vertical hole injection mechanism. This work establishes atomic-scale field engineering as a viable axis for performance control and optimization in semiconductor devices.

Negative capacitance field-effect transistors (NCFETs) leverage the negative capacitance effect of ferroelectric layers to amplify gate voltage, enabling ultra-steep subthreshold swing (SS) characteristics that can overcome the thermionic limit and support the development of ultra-low-power electronics. In this work, we demonstrate magnetic-gated van der Waals NCFETs (MG-NCFETs), which integrate magnetic field modulation into NCFET architecture to achieve multi-field coupling. The fabricated devices exhibit a high on/off current ratio of 107 and a minimum SS of 24.7 mV/dec under a low driving voltage of 0.1 V. Magnetic field modulation of carrier transport in the channel yields a magnetically controlled on/off ratio of up to 10 3 , along with a stable periodic response. This approach enables the transduction of external magnetic fields into effective electrical control signals, achieving contactless coupling among magnetic, ferroelectric, and semiconducting functionalities. The proposed MG-NCFET architecture offers promising potential for multifunctional micro/nanoelectronic devices and integrated multiplexed systems.

Driven by the rapid evolution of flexible electronics, rehabilitation healthcare is shifting toward devices that seamlessly interface with human body. Yet, existing solutions often simply layer flexible sensor units over rigid components, making it difficult to combine high elasticity, mechanical robustness, and true imperceptibility. Here, we are pioneering a super-tough (∼54.7 MPa) and highly stretchable (>400% strain) triboelectric webbing (T-webbing) that overcomes this long-standing trade-off through the synergistic integration of an embedded textured architecture and functional elastic yarns. The T-webbing supports mass customization, exhibits outstanding electrical durability (>100 000 cycles), and enables reliable self-powered sensing capability with tunable mechanical properties for diverse rehabilitation tasks. In a proof-of-concept demonstration, the T-webbing is seamlessly integrated into a machine-learning-enabled lower-limb rehabilitation platform, achieving a motion recognition accuracy of 97.9% while enabling seamless one-click data sharing, intuitive human-machine interaction, and real-time remote guidance. By bridging high mechanical resilience with imperceptible wearability, our study offers a brand-new solution for data-driven, high-compliance, home-based rehabilitation within the Internet-of-Things ecosystem-addressing a pressing clinical need for scalable, patient-friendly solutions.

Two-dimensional nonlayered MnSe represent a unique class of nanomaterials that combine bulk structural characteristics with surface-dominated properties from unsaturated dangling bonds. However, their specific phase control remains fundamentally challenging due to inherent thermodynamic instabilities. Herein, we report the successful fabrication of ultrathin wurtzite-type and rock-salt-type MnSe nanosheets via chemical vapor deposition (CVD) by modulating growth parameters. In addition, we carried out density functional theory (DFT) and thermodynamic analysis to systematically elucidate the formation mechanisms of diverse crystalline phases during crystal growth, revealing that this polymorphic behavior stems from intrinsic thermodynamic competition. Notably, wurtzite-type MnSe exhibits unique optical properties, including a distinct photoluminescence (PL) emission feature at 900 nm (1.38 eV), caused by impurity-perturbed Mn2+ excitons. This study provides fundamental insights into phase control in nonlayered 2D materials, paving the way for their integration into electronic, optoelectronic, and spintronic devices.

Brain-inspired neuromorphic computing hinges on multidimensional regulation of devices, whereas piezo-phototronic devices with distinct advantages in such capability remain significantly underexplored in this frontier domain. Here, monolithic integration of neuromorphic perception, associative learning, and feature extraction is achieved in a novel magnetostrictive-amplified piezo-phototronic transistor (MAPP-FET), which incorporates a Terfenol-D substrate with sequentially stacked mica, graphene, HBN, MoTe2, and alpha-In2Se3 layers. Under magnetostrictive stimulation, the MAPP-FET demonstrates a remarkable excitatory postsynaptic current enhancement factor of 1315.7 and a paired-pulse facilitation index of 177.25% (112.81% without magnetic field), revealing substantially enhanced synaptic plasticity. Based on these remarkable synaptic characteristics, we have not only successfully simulated human emotional associative memory behavior co-induced by light and magnetism, but also achieved a 4100% improvement in image recognition efficiency in feature extraction tasks combined with an artificial neural network (ANN). This work further expands the application scope of piezo-phototronics in neuromorphic computing and establishes a new design paradigm for intelligent hardware capable of brain-like perception and learning.

Neuromorphic hardware that emulates the axon-multisynapse architecture of biological neural networks offers a promising route toward advanced brain-like functions. However, current designs rely on intrinsically anisotropic 2D materials, which suffer from low anisotropy ratios and suboptimal semiconductor performance. Here, we demonstrate a ferroelectric local gating strategy that decouples electrical anisotropy from crystal symmetry, enabling an intrinsically isotropic MoS2 to exhibit pronounced directional transport behavior. The resulting ferroelectric-programmed synaptic transistor (Fe-PAST) achieves an ultra-high electrical anisotropy ratio exceeding 200, approximately 10∼20 times higher than that of naturally anisotropic materials, together with an on/off ratio of 5 × 106. The device further features two direction‑dependent synaptic pathways. By leveraging this artificial anisotropy, the individual synaptic pathways achieve high recognition accuracies of approximately 98% on MNIST and 90% on Fashion‑MNIST dataset. Furthermore, a feature‑level fusion strategy applied to CIFAR‑10 yields notably faster convergence and improved final accuracy compared to single‑axis. This work establishes a general strategy for engineering artificial electrical anisotropy in intrinsically isotropic semiconductors, providing a foundation for multifunctional neuromorphic devices with potential in advanced visual perception.

Abstract Interface engineering by polarization derives a plethora of distinctive phenomena. Most of them focus on modulation of barrier height for controlling carrier transport of direct-current electronics. However, modulating interface width under alternating-current settings and its resultant effects have not been explored. Here, we report the capacitive piezotronics, which utilizes piezoelectric polarization to control the interface width of heterostructures and modulate junction capacitance at high frequency. The built-in electric potential and the interface width can be reversibly tuned with amplitude as high as 0.11 V and 10.5 nm, which presents a high strain sensitivity ( > 110 fF/mbar), and surpasses that of commercial capacitive pressure sensors ( ~ 0.1-0.7 fF/mbar). It possesses a capacity of mechanically tuning transmission signal of communication systems with an amplitude > 11 kHz, and substantially improving the filtering characteristics particularly for high frequency noise ( > 300 kHz). The strain-tuned alternating-current electronics offer a distinctive approach for high quality communication.

The hardware realization of artificial synapses capable of faithfully emulating the brain's rich, multiscale computational dynamics remains a key challenge in developing reliable biometric recognition systems. Here, we report an electrically reconfigurable memristive synaptic device based on vertically aligned Bi₂Se₃ topological-insulator nanowires with an Ag/PMMA/Bi₂Se₃/Pt heterostructure. Within a compact architecture, the device enables dual regulation of volatile short-term plasticity and non-volatile long-term plasticity. This mode-reconfiguration capability remains stable during alternating cycles, demonstrating reproducible dual-mode operation. The dual-mode behavior originates from the synergistic interaction between Ag electrochemical metallization in the PMMA barrier and defect/trap-regulated carrier transport in Bi₂Se₃, while the nanowire-array architecture spatially localizes the conductive pathways and electrically isolates neighboring units. The device exhibits reproducible multilevel conductance modulation, with six distinguishable states retained for more than 10,000 s. It achieves a SET response time of ≤10 ns and a RESET response time of approximately 40 ns, with corresponding operation energies of 25.6 and 269.2 pJ, respectively. Moreover, the device emulates representative synaptic functions over timescales ranging from nanoseconds to milliseconds, including paired-pulse facilitation/depression (PPF/PPD) and long-term potentiation/depression (LTP/LTD). Notably, in a complex fingerprint-recognition task, an artificial neural network constructed using the physical conductance states of the device achieves a high classification accuracy of 94%, comparable to that obtained with idealized software-simulated synapses. This work establishes a new class of topological-insulator synapses and demonstrates a synergistic design strategy that integrates electrical reconfigurability with high-precision analog signal modulation, laying a foundation for robust and energy-efficient hardware-native biometric intelligence.

The discovery of two-dimensional (2D) van der Waals materials has created unprecedented opportunities for flexible optoelectronics and bio-inspired neuromorphic systems. Here, we present a flexible broadband MnSe/alpha- In2Se3 p-n heterojunction photodetector that simultaneously achieves outstanding optoelectronic performance (1.28 A/W photoresponsivity, 9.11 & times; 108 Jones detectivity, 353% external quantum efficiency at 450 nm) and strain-tunable response via the piezo-phototronic effect, demonstrating 203.9% enhancement under 0.303% tensile strain and 50.4% suppression under compression. The strain-modulated photoresponse enables direct coupling between optical and mechanical stimuli, where mechanical stimuli are directly converted into photocurrent variations without analog-to-digital conversion. Inspired by this mechanism, we develop a visuo-tactile fusion platform that integrates strain-gated signals as a fourth sensory channel. Implemented in an all-in-one architecture, the system achieves 86% recognition accuracy for Gaussian-blurred CIFAR-10 dataset with only 50 training epochs, while reducing system complexity compared to conventional multi-sensor platforms. This work not only demonstrates a novel heterostructure design for multidimensional optoelectronics but also reveals the potential of the piezo-phototronic effect in bio-inspired multisensory integration systems.

The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon-neutral power systems remains bottlenecked by contact resistance (R c) at the metal-semiconductor (M-S) interface, a critical determinant of switching losses and frequency response. Herein, by engineering a TiAl/TiAlTa/Au metastructure, we propose a novel interface-driven strategy employing Ta-mediated interfacial reconstruction to achieve a record-low R c of 0.07 Omega mm, which is two orders of magnitude lower than that of conventional Ti/Al/Ni/Au ohmic contacts. This innovation originates from expansion-bolt-like islands (shaped as inverted truncated pyramid-with extensive coverage and planar tops) formed during rapid thermal annealing (RTA) process, which are sufficiently dug into the two-dimensional electron gas (2DEG) channel. Distinct from traditional thumbtack-like morphology (resembling inverted cones), these expansion-bolt-like islands exhibit enhanced coverage to 2DEG channel, and planarized apex geometries that redistribute electric field, enabling 87% higher off-state breakdown voltage. This interface-driven strategy envisions a universal manufacturable paradigm for next-generation ultra-low-loss GaN power devices. (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(GaN HEMTs)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)-(sic)(sic)(sic)(M-S)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(R c)--(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)TiAl/TiAlTa/Au(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)0.07 Omega mm,(sic)(sic)(sic)(sic)(sic)Ti/Al/Ni/Au(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(RTA)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)((sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)--(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(2DEG)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)((sic)(sic)(sic)(sic)(sic)(sic)(sic)),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)2DEG(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)87%.(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)GaN(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).

The discovery of two-dimensional (2D) van der Waals materials has created unprecedented opportunities for flexible optoelectronics and bio-inspired neuromorphic systems. Here, we present a flexible broadband MnSe/u03B1-In2Se3 pu2013n heterojunction photodetector that simultaneously achieves outstanding optoelectronic performance (1.28 A/W photoresponsivity, 9.11 u00D7 108 Jones detectivity, 353% external quantum efficiency at 450 nm) and strain-tunable response via the piezo-phototronic effect, demonstrating 203.9% enhancement under 0.303% tensile strain and 50.4% suppression under compression. The strain-modulated photoresponse enables direct coupling between optical and mechanical stimuli, where mechanical stimuli are directly converted into photocurrent variations without analog-to-digital conversion. Inspired by this mechanism, we develop a visuo-tactile fusion platform that integrates strain-gated signals as a fourth sensory channel. Implemented in an all-in-one architecture, the system achieves 86% recognition accuracy for Gaussian-blurred CIFAR-10 dataset with only 50 training epochs, while reducing system complexity compared to conventional multi-sensor platforms. This work not only demonstrates a novel heterostructure design for multi-dimensional optoelectronics but also reveals the potential of the piezo-phototronic effect in bio-inspired multisensory integration systems.

GaN high-electron-mobility-transistors (HEMTs) exhibit superior high-power and high-frequency characteristics; however, they generate a substantial amount of heat during operation. As quantum piezotronic devices, GaN HEMTs are of particular interest due to their strong coupling processes between piezoelectric, electrical and thermal fields, which are still being explored. For the first time, we built a theoretical framework combining piezotronics with an electrothermal model to reveal the thermal spatial distribution and temporal evolution of GaN HEMTs. Advanced infrared thermography shows that the heat source is localized near the gate in the fabricated GaN HEMTs, which aligns with our theoretical model. The dynamic temperature characteristics indicate that the substrate layer contributes to the main thermal resistance and capacitance. Notably, by introducing an external stress, piezoelectric polarization can act as a probe to locally modulate the thermal fields. A 10.1% decrease in temperature rise is realized during the dynamic modulation process, which further confirms the accuracy of the model. This work deepens the understanding and cognition of piezoelectric-electric-thermal coupling processes and offers a novel thermal management strategy for GaN HEMT devices.

This paper focuses on the energy scheduling for integrated electricity-hydrogen systems (IEHS) with hybrid water electrolysis and biomass electrolysis. First, dynamic operating models for alkaline water electrolysis and proton exchange membrane biomass electrolysisis are presented to capture dynamic operating efficiency and temperature variations to improve the hydrogen production flexibility. Then, the quasi-steady-state operation model for IEHS is proposed. A tractable reformulation with various convex relaxation techniques is developed to address the resulting nonconvex and nonlinear terms arising from dynamic electrolysis models and quasi-steady-state hydrogen flow models to improve the solution efficiency. Numerical results illustrate the effectiveness of the proposed model.

Emerging applications including advanced industrial manufacturing, cutting-edge scientific research and medical equipment demand AlGaN/GaN HEMTs possessing both high-frequency and high-voltage characteristics. However, a persistent trade-off remains between the frequency characteristics and breakdown characteristics of these devices. In this study, we employed localized electric field tailoring (LEFT) by introducing materials with different dielectric constants to construct a non-uniform composite gate dielectric layer, aiming to balance the breakdown voltage and cut-off frequency of the device. Device models were developed using APSYS-2018 software and their reliability was experimentally validated. Research data indicates that, compared to traditional uniform high-k (typically with dielectric constants k > 10, such as HfO2 and HfZrO) gate dielectrics, the non-uniform composite gate dielectric structure demonstrates superior transconductance, saturation current density and cut-off frequency, with minimal degradation in breakdown voltage. Specifically, relative to HfO2 and HfZrO uniform devices, the Al2O3/HfO2 and Al2O3/HfZrO non-uniform HEMTs achieved 20.0% and 35.2% increases in cut-off frequency, respectively. Meanwhile, breakdown voltage remained above 97% of their uniform counterparts, saturation current density and transconductance increased by approximately 5%. Therefore, this non-uniform composite gate dielectric layer structure of AlGaN/GaN HEMT with LEFT holds great potential for industrial plasma generators, magnetic resonance imaging systems and biomedical radiofrequency hyperthermia devices.

The highly coupled energy self-management power system achieves a synergistic effect of 1 + 1 > 2 for a triboelectric–electromagnetic hybrid nanogenerator and efficiently enables water wave energy harvesting.

We report an ion-gel-gated amorphous indium gallium zinc oxide (a-IGZO) optoelectronic neuromorphic transistors capable of synaptic emulation in both photoelectric dual modes. The ion-gel dielectric in the coplanar-structured transistor, fabricated via ink-jet printing, exhibits excellent double-layer capacitance (>1 μF/cm2) and supports low-voltage operation through lateral gate coupling. The integration of ink-jet printing technology enables scalable and large-area fabrication, highlighting its industrial feasibility. Electrical stimulation-induced artificial synaptic behaviors were successfully demonstrated through ion migration in the gel matrix. Through a simple and controllable oxygen vacancy engineering process involving low-temperature oxygen-free growth and post-annealing process, a sufficient density of stable subgap states was generated in IGZO, extending its responsivity spectrum to the visible-red region and enabling wavelength-discriminative photoresponses to 450/532/638 nm visible light. Notably, the subgap states exhibited unique interaction dynamics with low-energy photons in optically triggered pulse responses. Critical synaptic functionalities—including short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF)—were successfully simulated under both optical and electrical stimulations. The device achieves low energy consumption while maintaining compatibility with flexible substrates through low-temperature processing (≤150 °C). This study establishes a scalable platform for multimodal neuromorphic systems utilizing printed iontronic architectures.

The ocean contains a vast source of energy, and triboelectric nanogenerators (TENGs) are emerging as a promising technology for its harvesting. Here, we report a facile-fabricated, robust hybrid TENG (H-TENG) designed to simultaneously harvest wind and water flow energy. The device, fabricated using 3D and electronic design automation (EDA) technologies, comprises an upper wind-driven unit (WH-TENG) and a lower water flow-driven unit (WFH-TENG). WH-TENG utilizes rabbit fur to achieve a high short-circuit current (Isc) of 14.8 mu A and a peak power of 3.54 mW, demonstrating exceptional durability by retaining 92% of its initial charge transfer (130.9 nC) after seven weeks. WFH-TENG, designed for simple preparation and integration, delivers a peak power of 1.13 mW. As a practical application, the integrated H-TENG successfully powers a water level alarm within 150 s. This work demonstrates a viable strategy for multi-energy harvesting in marine environments, paving the way for the long-term and comprehensive utilization of ocean energy.

Two-dimensional (2D) ferroelectric semiconductors, as an emerging class of functional materials, attract considerable interest in nanoelectronics, spintronics, and optoelectronics, owing to their unique ability to combine ferroelectricity and semiconducting properties at the ultimate thickness limit. This review provides a comprehensive overview of the development, fundamental mechanisms, and recent advances of 2D ferroelectric semiconductors. The origins and unique characteristics of 2D ferroelectricity are discussed, and representative intrinsic 2D ferroelectric semiconductors as well as extrinsic systems are summarized. The potential applications of these materials in electronics, optoelectronics, spintronics, and valleytronics are discussed in detail. Finally, the key challenges facing the field are outlined, and perspectives on future directions are offered. This review aims to provide a systematic reference for both fundamental studies and technological development, fostering the advancement of 2D ferroelectric semiconductors toward high-performance and multifunctional device applications.