A distributed network of LDO microregulators (uREGs) senses and corrects the voltage at multiple points on a power supply grid in a multi-core microprocessor to reduce IR drops and associated performance loss. Adding a switched-capacitor (SC) accelerator to the charge pump of each uREG speeds up output voltage transitions by 17X for greater DVFS savings. Line and load regulations are 6.7mV/V and 1.5mV/A, respectively. The regulator also achieves a power efficiency of 89.9% and a current efficiency of 98.5%, while reaching a peak power density of 91.1W/mm 2

Increasing transistor counts in modern processors can create instantaneous changes in current, driving nanosecond-speed supply voltage (V DD ) droops that require extra guardband for correct product operation. The POWER9 processor uses an adaptive clock strategy to reduce timing margin needed during power supply droop events by embedding analog voltage-droop monitors (VDMs) that direct a digital phase-locked loop (DPLL) to immediately reduce clock frequency in response.

The POWER9TM family of chips is fabricated in 14-nm silicon-on-insulator finFET technology using 17 levels of copper interconnect. The 695-mm2 24-core microprocessor features a new core based on an execution slice microarchitecture. The chip contains 8 billion transistors and has 120 MB of eDRAM L3 cache. The processor features an adaptive clock strategy to reduce timing margin needed during power supply droop events by embedding analog voltage-droop monitors that direct a digital phase-locked loop to immediately reduce clock frequency in response to a droop event. The scale-out chip IO subsystem supports up to 300-GB/s accelerator bandwidth using new 25-Gb/s links, 48 lanes of PCIeGen4 totaling 192 GB/s, eight ports of 2667 MT/s DDR4, and 256 GB/s of symmetric multiprocessor (SMP) interconnect. The scale-up chip adds additional SMP bandwidth and replaces the DDR4 memory interface with eight ports of differential memory interfaces with 230 GB/s of bandwidth resulting in 12.9 Tb/s of total off-chip bandwidth.

An apparatus for providing a local reference voltage for a voltage regulator includes a reference capacitor configured to provide the local reference voltage, a charge pump configured to push current to, or pull current from, the reference capacitor according to one or more control inputs received by the charge pump, and a boosting circuit configured to add or subtract a discrete quantity of charge to the reference capacitor according to one or more boosting control signals. A boosting control circuit may be configured to disconnect a boosting capacitor from the reference capacitor during a first phase of a control cycle and connect the boosting capacitor to the reference capacitor during a second phase of the control cycle. The boosting capacitor may be pre-charged (to add charge) or discharged (to subtract charge) during the first phase of the control cycle. A corresponding method is also disclosed herein.

A 1.1 Mb embedded DRAM macro (eDRAM), for next-generation IBM SOI processors, employs 14 nm FinFET logic technology with 0.0174 μm 2 deep-trench capacitor cell. A Gated-feedback sense amplifier enables a high voltage gain of a power-gated inverter at mid-level input voltage, while supporting 66 cells per local bit-line. A dynamic-and-gate-thin-oxide word-line driver that tracks standard logic process variation improves the eDRAM array performance with reduced area. The 1.1 Mb macro composed of 8 ×2 72 Kb subarrays is organized with a center interface block architecture, allowing 1 ns access latency and 1 ns bank interleaving operation using two banks, each having 2 ns random access cycle. 5 GHz operation has been demonstrated in a system prototype, which includes 6 instances of 1.1 Mb eDRAM macros, integrated with an array-built-in-self-test engine, phase-locked loop (PLL), and word-line high and word-line low voltage generators. The advantage of the 14 nm FinFET array over the 22 nm array was confirmed using direct tester control of the 1.1 Mb eDRAM macros integrated in 16 Mb inline monitor.

POWER8™ is a 12-core processor fabricated in IBM's 22 nm SOI technology with core and cache improvements driven by big data applications, providing 2.5× socket performance over POWER7+™. Core throughput is supported by 7.6 Tb/s of off-chip I/O bandwidth which is provided by three primary interfaces, including two new variants of Elastic Interface as well as embedded PCI Gen-3. Power efficiency is improved with several techniques. An on-chip controller based on an embedded PowerPC™ 405 processor applies per-core DVFS by adjusting DPLLs and fully integrated voltage regulators. Each voltage regulator is a highly distributed system of digitally controlled microregulators, which achieves a peak power efficiency of 90.5%. A wide frequency range resonant clock design is used in 13 clock meshes and demonstrates a minimum power savings of 4%. Power and delay efficiency is achieved through the use of pulsed-clock latches, which require statistical validation to ensure robust yield.

Integrated voltage regulator modules (iVRMs) [1] provide a cost-effective path to realizing per-core dynamic voltage and frequency scaling (DVFS), which can be used to optimize the performance of a power-constrained multi-core processor. This paper presents an iVRM system developed for the POWER8™ microprocessor, which functions as a very fast, accurate low-dropout regulator (LDO), with 90.5% peak power efficiency (only 3.1% worse than an ideal LDO). At low output voltages, efficiency is reduced but still sufficient to realize beneficial energy savings with DVFS. Each iVRM features a bypass mode so that some of the cores can be operated at maximum performance with no regulator loss. With the iVRM area including the input decoupling capacitance (DCAP) (but not the output DCAP inherent to the cores), the iVRMs achieve a power density of 34.5W/mm2, which exceeds that of inductor-based or SC converters by at least 3.4× [2].

A per-core clock generator for the eight-core POWER7™ processor is implemented with a digital PLL. This frequency generator is capable of smooth, controlled frequency slewing, minimizing the impact of di/dt. Frequency can be dynamically adjusted while the clock is running, and without skipping any cycles, thus enabling aggressive power management techniques.