Omair I. Saadat

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Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Kevin R. Bagnall,Omair I. Saadat,Sameer Joglekar,Tomas Palacios,Evelyn N. Wang

IEEE Transactions on Electron Devices, no. 5 (2017): 2121-2128

Cited by3EIWOSBibtex

Processing technology for high quality AlGaN/GaN MOSHEMT interfaces

Omair I Saadat

(2015)

EIBibtex

Advanced power electronic devices based on Gallium Nitride (GaN)

Daniel Piedra,Bin Lu,Min Sun,Yuhao Zhang,Elison Matioli,Feng Gao, Jinwook Chung,Omair Irfan Saadat,Ling Xia,Mohamed Azize,Tomas Palacios

international electron devices meeting, (2015)

Bibtex

Vertical Graphene-base transistor on GaN substrate

A Zubair,Omair I Saadat,Yi Song,Jing Kong,M S Dresselhaus,Tomas Palacios

(2014)

Cited by3Bibtex

Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Xuefeng Sun, K S Changliao, Sharon Cui, T P Ma,Omair I Saadat, Tomas Palacios

(2013)

Bibtex

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Isaak K Samsel,En Xia Zhang,Nicholas C Hooten, Erik D Funkhouser,William G Bennett,R A Reed,R D Schrimpf,Michael W Mccurdy,D M Fleetwood,Robert A Weller,G Vizkelethy,Xiao Sun

IEEE Transactions on Nuclear Science, no. 6 (2013): 4439-4445

Cited by24EIWOSBibtex

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Xiao Sun,Omair I Saadat, K S Changliao,Tomas Palacios,Sharon Cui,T P Ma

Applied Physics Letters, (2013)

Cited by62Bibtex

Atomic Layer Deposition of $Sc_2O_3$ for Passivating AlGaN/GaN High Electron Mobility Transistor Devices

Xinwei Wang,Omair I Saadat, Bin Xi,Xiabing Lou,R J Molnar,Tomas Palacios,Roy G Gordon

Applied Physics Letters, (2012)

Cited by11Bibtex

A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers

Nick L Marcoux,Christopher J Fisher,Doug White,John Lachapelle, Tomas Palacios,Omair I Saadat,Sameer Sonkusale

Circuits and Systems, pp.53-56, (2012)

Cited by3EIWOSBibtex

Low temperature gate dielectric deposition for recessed AlGaN/GaN MIS-HEMTs

Omair I Saadat,Tomas Palacios

(2011)

Cited by4Bibtex

High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

Mohamed Azize,Allen L Hsu,Omair I Saadat, Mark D Smith,Xiang Gao,Shiping Guo,Silvija Gradecak,Tomas Palacios

IEEE Electron Device Letters, no. 12 (2011): 1680-1682

Cited by30EIWOSBibtex

Self-aligned AlGaN/GaN transistors for sub-mm wave applications

Omair I Saadat

(2010)

Bibtex

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Tomas Palacios, Bin Lu,Omair I Saadat, E L Piner

(2009)

Bibtex

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation

Shiping Guo, J M Tirado,Xiang Gao,Omair I Saadat, Jae W Chung, Tomas Palacios

(2009)

Bibtex

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Passivation

J W Chung,Omair I Saadat, J M Tirado,Xiang Gao,Shiping Guo,Tomas Palacios

IEEE Electron Device Letters, no. 9 (2009): 904-906

Cited by70EIWOSBibtex

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With {Al}_{2}{O}_{3} Passivation

Jinwook W Chung,Omair I Saadat, J M Tirado,Xiang Gao,Shiping Guo,Tomas Palacios

IEEE Electron Device Letters, no. 9 (2009): 904-906

EIWOSBibtex

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Bin Lu,Omair I Saadat,E L Piner,Tomas Palacios

(2009)

Cited by10Bibtex

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

E L Piner,Jinwook Chung,Omair I Saadat, Tomas Palacios

(2009)

Bibtex

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Jinwook W. Chung,Omair I. Saadat,Jose M. Tirado,Xiang Gao,Shiping Guo,TomÁs Palacios

IEEE Electron Device Letters, no. 9 (2009): 904-906

Cited by81EIWOSBibtex

GaN and digital electronics: A way out of Moore's law

Tomás Palacios,Jinwook W. Chung,Omair Saadat,Frederic Mieville

Physica Status Solidi (c), no. 6 (2009): 1361-1364

Cited by17Bibtex

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Omair I. SaadatBinding

Papers20 papers

Omair I. Saadat