
This paper presents a dynamic comparator designed and simulated in a 0.6-mu m indium-gallium-zinc oxide (IGZO) thin-film transistor (TFT) process on a flexible substrate. The proposed circuit operates from a 3-V supply, consumes only 72 mu W of power, and occupies a compact area of 0.042 mm(2). Building upon a double-tailed comparator topology adapted to an all-nTFT process, the design incorporates a fixed-bias preamplifier to enhance offset tolerance and mitigate kickback noise. Post-layout simulations confirm robust performance at clock frequencies up to 200 kHz, with an offset voltage below 10 mV across various process corners. These results highlight the feasibility of implementing high-performance mixed-signal circuits on flexible substrates, enabling applications in large-area, low-cost systems such as sensor interfaces and data converters.
Current mode filters have gained momentum due their better fit to low supply voltage. With respect to the voltage mode counterpart, current mode filters reach a lower input referred noise as the bias current is lowered, enabling significative power saving. Indeed, the noise current is proportional to the bias current. However, the bias current reduction makes arising linearity issue, as the amount of signal current that can be processed is, generally, proportional to the bias current. This is why a push pull current mode filter able to overcome the limitation imposed by the bias current to maximum handleable signal current is proposed. Designed in a 65 nm CMOS technology, the push-pull current mode filter achieves a 3 times higher 1 dB compression point with respect to the simple current mode version. The cost is paid in terms of area, which may increase by up to 50% compared to the simple version, while power consumption remains unaffected.