Exploiting the D-band spectrum is critical for nextgeneration wireless communication systems. This work presents a direct-conversion D-band receiver featuring a mixer-first topology that maximizes bandwidth and linearity for ultra-fast data rates. A novel injection-locking based quadrature correction scheme is proposed for precise IQ phase imbalance calibration. A highorder harmonic injection-locking LO multiplier chain is adopted to minimize DC power consumption. Measurement results show that the receiver exhibits a low noise figure around 13.3dB. Achieving 240Gb/s under 16QAM modulation with an energy efficiency of 0.51pJ/b, this work demonstrates the highest data rate and energy efficiency among all reported state-of-the-art Dband receivers.

This paper details the design and simulation-based evaluation of three distinct N-type-only low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) voltage reference circuits, tailored for the specific demands of flexible electronic systems. Addressing the inherent design challenges in TFT technology, these circuits employ a common strategy: generating a current with a negative temperature coefficient to compensate for proportional-to-absolute-temperature (PTAT) voltage characteristics. Comprehensive post-layout and statistical Monte Carlo simulation results highlight that the first of the proposed configurations achieves superior performance, exhibiting a temperature coefficient (TC) of 34.03 ppm/°C, a line sensitivity of 0.61 %/V, and a power supply rejection ratio (PSRR) of -42.34 dB. This study presents new circuit-level approaches for achieving reliable voltage references in flexible applications, thereby advancing the development of high-performance, flexible electronic systems.

We demonstrated a compact and sensitive optical intensity sensor based on a Fabry-Perot (FP) probe, which was fabricated by splicing a capillary fiber (CF) to a single-mode fiber (SMF) and by filling the capillary with a polydimethylsiloxane (PDMS) matrix containing dispersed multiwalled carbon nanotubes (MWCNTs). The FP cavity filled with the PDMS/MWCNTs composite not only maintains the high temperature sensitivity of the sensing element but also enhances the photothermal conversion efficiency. When the focused light intensity increases from 0 to 49.8 mW, the sensitivity wavelength shift of the probe reaches 0.26 nm/mW. Compared with the FP probe filled with pure PDMS, the optical power sensitivity is improved by more than 8.6 times. The temporal response of the probe was measured, yielding heating and cooling times of 315 and 538 ms, respectively. Moreover, a reference cavity was introduced into the optical intensity detection system to generate the Vernier effect, which further enhanced the optical intensity sensitivity. As a result, the sensitivity increased to -1.78 nm/mW, representing an additional improvement of 6.8 times. These results demonstrate that the fabricated and low-cost FP probe offers a rapid response and high sensitivity, making it a promising candidate for practical optical intensity detection applications.

Organic thin-film circuit design requires not only high-performance transistors but also reproducible device behavior that can be captured in compact models and supported by a process design kit (PDK). Existing low-voltage OTFT technologies often rely on shadow-mask or printed process, where coarse patterning and alignment variability hinder device uniformity, parasitic management, and integration scalability. This work presents a photolithography-compatible OTFT platform based on a tri-layer dielectric stack that achieves uniform, low-voltage transistor operation with a mobility of 0.87 ± 0.07 cm2 V−1 s−1, a threshold-voltage of 0.96 ± 0.13 V and an 87% functional yield across the substrate. These reproducible device characteristics enable the extraction of a calibrated Level-62 RPI poly-TFT compact model, which is integrated into a complete PDK with defined layers, routing modules, and verified DRC/LVS rules. Circuit demonstrations, including inverters, NAND gates, a master-slave D-flip-flop, and a full adder, reproduce the expected Boolean functionality under low-voltage operation. The results establish a unified workflow that links lithography-defined OTFT fabrication with PDK-compatible modeling and circuit-level simulation, providing a foundation for scalable organic thin-film electronics.

Abstract The outbreak frequency and geographic distribution of viral pathogens are continuously expanding, making enhanced genomic surveillance an urgent global public health need. Parallel library preparation combining next-generation sequencing (NGS) and third-generation sequencing (TGS) can substantially improve the coverage and resolution of genomic surveillance, representing a key strategy for strengthening surveillance. Here we developed a complete sample-to-result system integrating a programmable active-matrix digital microfluidic (AM-DMF) chip with a bioinformatics analysis pipeline. Compared with conventional manual protocols used in public health laboratories, our system reduces reagent consumption by 72%, shortens library preparation time by 45% and decreases the inter-batch coefficient of variation (CV) by 20%. In 20 RT-qPCR-confirmed clinical samples, the system achieved complete concordance for viral identification and assigned serotypes/genotypes consistent with sequencing-based phylogenetic analysis. This system is field-deployable and enables rapid virus serotyping as well as in-depth genomic surveillance. Teaser A digital microfluidic platform integrating short- and long-read sequencing enables rapid comprehensive viral genome analysis.

We demonstrate the fabrication of pre-twisted long-period fiber gratings (PT-LPFGs) in polarization-maintaining fibers (PMFs) using a CO2 laser. This technique leverages pre-twisted fibers combined with laser exposure, eliminating the need for precise alignment along the PMF axis, a key limitation of conventional single-side CO2 laser methods. The PT-LPFGs with the periods of 420- 480 mu m were successfully fabricated, achieving a maximum polarization-dependent loss (PDL) exceeding 20 dB at the resonance wavelength. The dual-dips resonance of the LP11 core mode was observed in the 1.0 mu m wavelength band. Further chemical etching was applied to adjust the cladding mode resonance wavelength near the dispersion turning point (DTP). This adjustment enabled dual-dips resonance with LP14 and LP15 cladding modes along the PMF's slow and fast axes, respectively, within the 2.0 mu m wavelength band. The sensing performance of PT-LPFGs near the DTP was evaluated. Experimental results demonstrate that these gratings exhibit a high sensitivity of up to 14100 nm/RIU for the surrounding refractive index range of 1.448-1.457. Furthermore, the temperature and strain sensitivities were measured to be at 713 pm/degrees C and -49.4 pm/ mu epsilon , respectively. These findings highlight the potential of PT-LPFGs for high-sensitivity fiber sensors, PDL compensators, and other advanced optical applications.

This paper reports a novel energy-efficient and high-memory/compute-density eDRAM Computing-in-Memory (CiM) by introducing AFEFET-based eDRAM cells into look-up tables (LUTs). The highlights include: (1) Fabricated 1-transistor-1AFEFET (1T1AF) eDRAM cell with short Amorphous-Indium-Gallium-Zinc-Oxide ($a$-IGZO) channel length of $\mathbf{2 5 ~ n m}$ and high cell density; (2) Measured high endurance over $2 \times 10^{9}$ cycles for AFEFETs and long retention time over $10^{3} \mathrm{s}$ for 1T1AF eDRAM cell; (3) Proposed computation mode combining digital LUT and analog capacitor coupling for the first time, enabling high energy efficiency, high compute density, and high accuracy. Evaluation results show that the proposed 1T1AF eDRAM-LUT-based CiM achieves a high memory density of 5.52 Mb/mm2, a high 8 b peak compute density of 11.3 TOPS/mm2, and a high 8 b peak energy efficiency of 107.2 TOPS/W, showing great potential for energy-efficient and high-performance CiM designs.

Implantable neuroprostheses require stimulators with a high number of channels and mechanical flexibility. Organic thin-film transistors (OTFTs) are potential for flexible circuits and large-area bioelectronic systems. However, inconsistent stimulating current levels across different pixels caused by non-uniform threshold voltages remains a challenge, due to fabrication process variations. This paper introduces a 7T2C pixel circuit utilizing OTFTs designed in neurostimulation system. The main function of the pixel circuit is to compensate for threshold voltage variations in the TFTs and provide stable and uniform currents to current-driving devices of the neurostimulation system. Measurement results confirm the relationship between the output stimulation currents and shifts in threshold voltage.

2.5D packaging supports high-speed data transmission, meeting performance requirements of GPU. However, signal integrity (SI) is a key challenge to packaging. This paper demonstrates a GPU with HBM and adopts 2.5D packaging technology. A series of design schemes are proposed, including 4-marker die-interposer alignment, 5-metal-layer connection with HBM by TSV. Moreover, Cup bump and octagon under bump metallurgy technologies are used in interposer to improve signal transmission quality. The measurement results illustrate these technologies can improve SI effectively, achieve 1.8 TB/s bandwidth in 2.5D packaging.

Bioelectronic devices enable real-time monitoring, diagnosis and treatment by blending biological processes with electronic technology. Through wireless connections, these systems could reduce reliance on hospital visits and offer remote care services to low-resource settings. However, there is a disparity in the biomechanical properties of conventional silicon-based systems and human tissue, which could impair tissue conformability and increase the risk of mechanical failure. Moreover, conductive polymers, despite being flexible, suffer from limited surface chemistry, lower electrical conductivity and poor long-term stability in physiological environments. Thus, wearable and implantable bioelectronics made of materials that enable stable, time-solved multimodal measurement of biophysical and biochemical signals in a miniaturized and subtle form factor are highly needed. In this Review, we examine the requirements, property matrix and role of low-dimensional materials in bioelectronic systems by device components for miniaturized, wireless and connected health care. Bioelectronic devices enable real-time monitoring, diagnosis and treatment by blending biological processes with electronic technology. This Review examines the material property landscape of low-dimensional materials in bioelectronic systems by device component, emphasizing their role in enabling the development of miniaturized bioelectronic platforms for wireless and connected health-care applications.

The demand for high-quality neurostimulation, driven by the development of brain-computer interfaces, has outpaced the capabilities of passive microelectrode-arrays, which are limited by channel-count and biocompatibility. This work proposes a back-end-of-line (BEOL) process for 1024-channel stimulator with bioelectrodes and waterproof encapsulation to stimulate dorsal root ganglion neurons. We introduce an active-matrix neurostimulator based on n-type low-temperature poly-silicon thin-film transistor, adding PEDOT:PSS and SU-8 as bioelectrodes and encapsulation. This enables precise stimulation of DRG neurons, addressing key challenges in neurostimulation systems.

This study presents a novel tri-layer gate dielectric design for organic thin-film transistors, tailored for bioelectronic applications, with improved yield, uniformity, and integrability for systems. The proposed tri-layer structure consists of a buffer layer, a surface-tuning layer, and a high-k layer. Experimental results demonstrate a high yield of 93% with a mobility of 0.94 ± 0.07 cm2 V-1 s-1 and a threshold voltage of -0.02 ± 0.06 V, using all-photolithographic processes. Such a high device yield achieved by tri-layer design also enables scalable, large-area integration, which is hardly possible in the previous bi-layer design (of which the device yield is 37%). We demonstrated a 1024-channel bioelectronic stimulation array (an analogue system) with 4096 transistors, achieving an output current of 8.86 ± 2.0 μA over a 3 × 3 cm2 area, as well as several digital circuits, namely, inverters, NAND, NOR, and D flip-flops. This work highlights the importance of creating reliable, low-voltage, and integrable OTFTs as building blocks for bioelectronics, paving the way for future applications in wearable sensors and implantable systems.

Single-cell analysis is crucial for deciphering cellular heterogeneity and understanding complex biological systems. However, most existing single-cell sample manipulation (SCSM) systems suffer from various drawbacks such as high cost, low throughput, and heavy reliance on human interventions. Currently, large language models (LLMs) have been used in robotic platforms, but a limited number of studies have reported the application of LLMs in the field of lab-on-a-chip automation. Consequently, we have developed an active-matrix digital microfluidic (AM-DMF) platform that realizes fully automated biological procedures for intelligent SCSM. By combining this with a fully programmable lab-on-a-chip system, we present a breakthrough for SCSM by combining LLMs and object detection technologies. With the proposed platform, the single-cell sample generation rate and identification precision reach up to 25 AP_75^test metric, while efficiently distinguishing obscured cells at droplet edges, where approximately 20

We demonstrate a saturable absorber-based mode-locked fiber laser with an embedded Sagnac interference filter for strain sensing. By selecting an appropriate birefringent fiber length in the loop, the interferometer exhibits two dips within the wavelength ranges of the amplified spontaneous emission spectrum, functioning as a bandpass filter for wavelength selection. Mode-locked pulses at the central wavelength of the bandpass filter can self-start by increasing the pump power. The laser-based axial strain sensing system retains the high sensitivity of a Sagnac interferometer while overcoming demodulation challenges caused by peak tracking of the interferometer spectrum. Strain sensing was achieved by monitoring the optical spectrum and radio frequency (RF) spectrum of the mode-locked pulses. Within a strain variation range of 0-1045 mu & varepsilon;, the wavelength shift sensitivity reached 21 pm/mu & varepsilon;. As strain increased, cavity length expansion resulted in a fundamental frequency RF spectrum shift sensitivity of-0.767 Hz/mu & varepsilon;. The proposed system provides multiple types of strain demodulation options, and its compact structure holds the potential for structural health monitoring of bridges, pipelines, aviation materials, etc.

Organic thin-film transistor (OTFT) is a promising device technology for flexible large-area high-channel-count active-matrix neurostimulation system due to its flexibility and biocompatibility. However, circuits made by OTFT might be sensitive to device variation. As a result, it is difficult to achieve precise neurostimulation without any compensation structure in the pixel circuits. This work proposes a 6T2C threshold voltage compensation circuit for neurostimulation, which has low output current variation of 10.53%, reduced from the variation of 17.85% without compensation. We also improve the OTFT fabrication process with encapsulation to allow the circuits to operate under an electrolyte environment. Using the pixel circuits, we implement a 256-channel active-matrix neurostimulation system. The system can output stimulation with any pattern and allow each channel to output independently and simultaneously.

While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS2 with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (LCH). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×103, with no degradation as LCH scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm LCH, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications.

The rapid growth in the parameter count of large language models (LLMs) in recent years has placed higher demands on the density of compute-in-memory (CiM) solutions. Read-only memory (ROM), due to its high-density advantages, has emerged as a promising CiM cell type, offering substantial task-level energy efficiency improvements over SRAM CiM. However, traditional 2D ROM CiM approaches are limited by 2D fabrication constraints, restricting scalability for LLM deployment. To address this limitation, this work explores a novel 3D back-end-of-line (BEOL)-compatible device, the channel-all-around (CAA)-IGZO TFT. Here, we propose a 3D ROM CiM with an ultra-dense cell structure and a high-throughput computing scheme. Additionally, we introduce a hybrid 3D CiM accelerator architecture that integrates both ROM and eDRAM for unprecedented density and flexibility. Evaluation results show that the proposed 3D ROM CiM, with 16 CAA-IGZO stacked layers, achieves an ultra-high memory density of 31.19 Mb/mm(2)/layer, a computation density of 167.6 TOPS/mm(2), and high computing accuracy with a compute SNR (CSNR) of 22.6 dB, underscoring its potential for edge large-scale model acceleration. Based on this, when deployed with a LoRA-tuned GPT-2 model, the proposed hybrid 3D eDRAM-ROM architecture shows 1.7x improvement in area efficiency compared to the eDRAM-only counterpart.

In the era of intelligent IoT, huge amount of sensor data is collected and then transmitted to processor elements in edge devices or cloud servers. The latency and energy consumption in this process have been a bottleneck and are becoming more severe. To mitigate this problem, the idea of combining sensors, memory and processors for collectively handling the data, has been proposed and explored actively in recent efforts. In this work, thin-film transistor (TFT), which has been widely adopted in display devices and flexible sensors, is exploited. It is shown that, while TFT is promising for large-area sensing, it also shows a great potential for computing and storing data for large-area and low-cost edge sensors. More specifically, we have fabricated and measured two large-area TFT-based near-sensor computing-in-memory (CiM) chips adopting embedded DRAM (eDRAM) and ROM structure respectively. We further give a detailed analysis of the integration of CiM arrays and sensor arrays to realize a sensing and data pre-process system. Measurement and simulation results show that such TFT-based solutions can accomplish real-time sensing and multiply-accumulate (MAC) processing in the analog field, which simplifies the system design with lowered energy and latency in our neural network evaluations.

Implantable neuroprostheses require stimulators with high channel counts and mechanical flexibility. Organic thin-film transistor (OTFT), an essential building block for flexible circuits and system, is a promising candidate. However, the development of photolithographic OTFTs for complete bioelectronic system integration remains a challenge, due to their limited yield and uniformity. This paper reports a 4-mask photolithographic OTFT circuit integration technology, which shows a high device yield of 100% (50/50) and small device variation in threshold voltage of 0.64 V and in mobility of 4.9%. Using a device-circuit-system co-design approach, we demonstrate an active-matrix neurostimulation array comprised of 1024 pixels of a 4T1C stimulation circuits, in which independent stimulation intensity levels can be programmed and current stimulus at all channels can output simultaneously. The electrical function of the complete neurostimulation system is verified, showing a small variation of 15.59% for the output stimulation currents among pixels. This OTFT-based neurostimulation system provides a potential solution for the next-generation neurostimulators with high channel counts and mechanical flexibility.

Transparent organic thin-film transistors(OTFTs) are promising for bioelectronics applications, by allowing simultaneous optical imaging with electrical sensing and modulation. However, the state-of-the-art transparent OTFTs have limited device performance ,in terms of low mobility and high threshold voltage. This is mainly attributed to the large contact resistance induced by the energy level mismatch between the transparent electrodes and organic semiconductors.He re, we report transparent OTFTs with indium tin oxide electrodes modified by fluorinated silanes to improve device performance. It is found that the OTFTs with electrode modified by fluorinated silanes exhibit increased mobility from 0.12 cm(2)/Vs to 1.58 cm(2)/Vs and lower threshold voltage from -12.45 V to -2.21 V. The contact resistance of the OTFT characterized by a transmission line method, shows a reduction from over 1 Mto below100 k.