The manipulation over diverse topological matters has become a critical demand for advancing quantum devices and topological spintronics. However, such experimental demonstrations remain scarce. Here, based on a novel breathing kagome magnetic Weyl semimetal LaCrGe3, we realize a spin-rotation driven Weyl state evolution under the control of an external magnetic field. While the breathing of kagome lattice is revealed to boost the desired topologic state, the predicted Weyl points are observed around the Fermi level via angle-resolved photoemission spectroscopy, and are further corroborated by transport effects of chiral-anomaly-related negative magnetoresistance and large anomalous Hall conductivity. By rotating the external magnetic field, we demonstrated that the reorientation of magnetic moments can drive the motion of Weyl points in momentum space, which is characterized by a highly tunable angle-dependent Hall response. Our study presents a modulation of both topology and transport via spin orientation that offers fundamental insights for developing next-generation spin-based functional devices based on topological physics.

The anomalous Hall and Nernst effects provide critical probes for investigating the Berry-curvature-related electronic band characteristics in magnetic materials. In this study, we conducted a comprehensive investigation into the magnetic, electrical, and thermal transport properties of NdCrGe3 single crystals with a Ge-based breathing kagome lattice. This compound undergoes a ferromagnetic transition at 128 K, and magnetic ordering of the Nd sublattice emerges below 100 K. Transport measurements indicate that NdCrGe3 manifests large anomalous Hall conductivity with sigma(A)(xy)approximate to 380 Omega(-1)& sdot; cm(-1) at low temperatures and an anomalous Nernst coefficient with |S-xy(A)-max|=0.74 mu V/K at 100 K. Scaling analysis reveals that NdCrGe3 exhibits large intrinsic anomalous Hall conductivity of similar to 260 Omega(-1)& sdot;cm(-1) and falls within the intrinsic regime of the unified model. Furthermore, the anomalous Nernst coefficient breaks down the scaling relationship with magnetization observed in conventional ferromagnets, while the anomalous Nernst conductivity manifests a scaling behavior of T ln T. These results demonstrate that the anomalous transverse transport properties of NdCrGe3 are predominantly governed by the intrinsic Berry mechanism.

Establishing a high-quality service database is crucial for the service evaluation and life prediction of materials and equipment, particularly in the nuclear power industry, where data that accurately capture the internal evolution of service-related defects can improve the reliability of predictive models. This study investigates the pitting corrosion growth of Inconel 690 alloy by systematically tracking different growth stages of pits using optical microscopy, scanning electron microscopy, and three-dimensional (3D) reconstruction techniques, thereby obtaining comprehensive pitting evolution data. Three-dimensional models were constructed under corrosion conditions of 70 and 90 degrees C, and the temporal evolution of key geometric parameters was analyzed using a power-law relationship to characterize the growth behavior and time dependence of pitting corrosion. In addition, the shielding effect of the lacy cover on pit interiors was analyzed, highlighting the necessity of acquiring comprehensive pitting evolution data. This work provides a representative example for the collection and analysis of full-information data to support service performance evaluation and digital twin applications in nuclear power materials.

Unveiling and manipulating topologically non-trivial electronic states represents a key task in designing and realizing topological quantum materials that exhibit strong Berry curvature and large transverse transport effects. Beyond achieving topological band inversion via heavy-element substitution in semiconductors, the intrinsic nature of linear band-crossing and the diversity of topological states have drawn significant attention. In this study, using symmetry breaking induced by space group transformation in a ferromagnetic Heusler platform, we reveal a topologically non-trivial electronic band structure, termed as the topological umbrella that comprises twofold degenerate spin-up bands and threefold degenerate spin-down bands, originating from the interplay of crystal field splitting, spin splitting, and spin-orbit coupling. Leveraging its relatively flat band dispersion and linear band crossing, the umbrella structure can be exploited to effectively modulate the topological properties, thereby enabling the anomalous Hall conductivity to be tuned from 98 Omega - 1cm- 1 to an exceptionally high value of 3032 Omega - 1cm- 1. Our study not only demonstrates a non-trivial topological umbrella electronic state, but also proposes a material design scheme for manipulating the topological electronic states and transport physics, paving the way for the emerging topological spintronics that advances the future quantum devices and applications.

Nonvolatile magnetotransport in a single magnetic material is usually tied to spin-orbit coupling and therefore rarely exhibits a large ON/OFF ratio. Here we show that this limitation can be overcome through magnetoelastic reconstruction of nonrelativistic real-space transport paths. Using the two-dimensional antiferromagnet FePS3 as a representative system, first-principles quantum transport calculations reveal that charge transport is strongly tied to quasi-one-dimensional zigzag sublattice chains and, under suitable doping, can even become confined to them. Strain lifts the degeneracy among symmetry-related zigzag variants and reorients these transport paths through magnetoelastic coupling. Consequently, both longitudinal and transverse conductivities change dramatically, yielding a giant magnetoelastic magnetoresistance up to 104% and an energy-independent Hall ratio far exceeding spontaneous Hall ratios in conventional magnets. These results establish a route to exploiting symmetry-related magnetic variants and their associated transport paths for high-performance spintronic devices with reconfigurable nonvolatile functionalities.

High-performance dielectric ceramic capacitors hold immerse potential for advanced electronics and high-power electrical systems. However, achieving both high recoverable energy density (Wrec) and high energy efficiency (η) remains a critical challenge in bulk dielectric ceramics. Herein, we propose a triple-synergistic strategy that integrates medium-entropy superparaelectric design, local structural distortion, and plate-like secondary bismuth titanate phase construction in SrTiO3-based dielectric ceramics. This approach effectively promotes the formation of polymorphic polar nano-regions with short-range polar vectors, enhancing dynamic polarization response. Simultaneously, the introduction of a plate-like secondary bismuth titanate phase within the perovskite matrix significantly increases the breakdown field strength (Eb) by inhibiting breakdown-path propagation. The resulting medium-entropy superparaelectric exhibits a nearly hysteresis-free P-E loop, combined with an ultrahigh Eb and high polarization. Notably, the material achieves a remarkable Wrec of 10.31 J/cm3 along with an ultrahigh η of 90.9%. Furthermore, it demonstrates outstanding charge/discharge performance, excellent thermal stability and robust cycling stability, making it a highly promising candidate for energy storage applications. This study provides a feasible and innovative design strategy for high-performance bulk dielectrics, paving the way for the development of eco-friendly dielectric capacitors for next-generation energy storage systems.

Van der Waals (vdW) magnetic materials offer a flexible platform for exploring low-dimensional spin-dependent transport. FePd2Te2 (FPT) is a layered ferromagnet with a Curie temperature of similar to 185 K, whose magnetic anisotropy and domain structure give rise to rich Hall responses. Here, by measuring the Hall effect as a function of the magnetic field rotation angle, we observe an unconventional anomalous Hall effect with two clear plateaus near the in-plane (IP) and out-of-plane (OOP) field directions, characteristic of an anisotropy-driven spin-reorientation process. Notably, within a narrow angular range close to the IP configuration, a pronounced hump-like Hall signal emerges. Temperature-dependent measurements at this optimal angle further uncover a distinct thermal window in which the hump amplitude is maximized. Remarkably, a similar angle- and temperature-selective hump is also observed in a much thicker FPT flake, showing that this effect is robust against a several-fold change in thickness and making extrinsic multi-domain or domain-wall mechanisms unlikely. Taken together with bulk magnetization data and tests of multi-channel anomalous Hall scenarios, these results are most consistently explained by a topological Hall effect arising from chiral or noncoplanar spin textures stabilized during the field-driven spin reorientation. Our findings identify FPT as a promising vdW platform exhibiting robust signatures of emergent topological transport and offer new possibilities for engineering spin-based functionalities in layered magnetic heterostructures.

Computing-In-Memory (CIM) has emerged as a pivotal architecture for energy-efficient artificial intelligence inference systems. Among CIM paradigms, the bit-serial approach is particularly attractive for its inherent scalability and high area efficiency. However, its performance is severely constrained by the power and latency of numerous A/D conversions and digital shift-and-addition, alongside substantial dynamic power from iterative computations. To overcome these challenges, this work presents a fully analog bit-serial CIM architecture, named FABS-CIM. FABS-CIM introduces a switched-capacitor analog shift-and-addition unit that significantly reduces A/D conversion overhead, a low-reference charge-domain computation scheme that minimizes array dynamic power, and a low-cost readout circuit that integrates in-situ batch normalization with a time-to-digital converter. Experimental results demonstrate that FABS-CIM achieves a normalized energy efficiency of 2703.36 TOPS/W and a throughput of 277.4 GOPS, while maintaining excellent computational linearity—representing an 1.42–3.85× improvement in energy efficiency over prior designs.

Half-metallic fully-compensated ferrimagnets (HMFCFs) have garnered significant interest in recent years owing to their promising applications in spintronics. Atomic disorder plays a critical role in determining the properties of HMFCFs. In this work, we present a combined experimental and theoretical investigation of Ti-doped Cr2CoGa alloys. First-principles calculations reveal a half-metallic compensated magnetic state in the XA-ordered Cr46.5Ti3.5Co25Ga20Si5 alloy. Experimentally, the Cr47Ti3Co25Ga20Si5 ribbon samples exhibit a minimal magnetic moment of 0.08 mu B/f.u., whereas an anomalous increase is observed in the Cr46.5Ti3.5Co25Ga20Si5 composition. Notably, the sign of the anomalous Hall effect (AHE) remains unchanged during doping, indicating a deviation from the ideal half-metallic magnetic compensation state. Theoretical analysis suggests that atomic anti-occupation accounts for these experimental observations, with the degree of elemental disorder escalating at higher doping levels. Our results underscore the critical role of atomic ordering in the design of HMFCF materials.

Near-sensor computing (NSC) has emerged as a promising paradigm for edge visual processing and data compression, to mitigate data transmission and computing overheads at IoT nodes. However, existing NSC still suffers from limited precision, reduced frame rate and low energy efficiency under complex DNN tasks due to inefficient analog memory, exponential computation overheads and considerable ADC burden. This paper introduces FALCON, a novel current-mode (CM) NSC architecture featuring in-current-register-processing (ICRP) unit and two-step multiply-and-accumulate (TS-MAC) for high-precision and low-latency feature extraction. Additionally, a reconfigurable ADC with embedded ReLU and pooling functionality is employed to improve ADC overhead and compression ratio. Implemented under a 55nm CIS process, FALCON achieves 12.92 TOPS/W with 7-bit weight precision and supports a frame rate of 3096 fps under 8 filters, with an iFOM of 10.1 pJ/pix•fps.

Building energy consumption and greenhouse gas emissions are significant challenges facing the global building systems. Heat pipe technology has gained attention in energy efficiency for buildings due to its excellent heat transfer performance. Research advancements encompassed the fields of solar water heating systems, HVAC systems, and building envelopes. In solar water heating systems, optimizing thermal efficiency was a priority. In HVAC systems, improving the COP and optimizing dehumidification capabilities were important indicators. In building envelopes, heat pipes achieved energy savings through solar radiation and embedded designs. Current research shows that heat pipes can improve the system’s heat collection efficiency and COP value, and reduce building heat loss, but they face challenges such as low-temperature freezing, load fluctuation adaptation, interface thermal resistance, cost, and maintenance. The proposed strategies mainly include optimizing the working fluid, improving the structural design, and integrating intelligent control. Future efforts need to focus on low-temperature adaptation, load adjustment, and full-life-cycle reliability to promote large-scale use of heat pipes in buildings. This review aims to provide reference guidance for the application and development of heat pipe technology in the building systems.

Synthetic frequency dimensions offer a powerful approach in the simulation of lattice models and control photon dynamics. However, extending this concept to the quantum regime, particularly at the single-photon level, has remained challenging in photonic platforms. Here, we demonstrate quantum-state initialization and detection of single-photon evolutions within a synthetic frequency lattice by integrating a superconducting qubit with a 16 m aluminum coaxial cable. A tunable superconducting quantum interference device-based modulator is employed to synthesize lattice couplings and artificial gauge fields. We observe single-photon quantum random walks and Bloch oscillations, as well as nonadiabatic unidirectional frequency conversion under rapid temporal modulation of the lattice Hamiltonian, and present band-structure measurements. The lattice connectivity can be readily reconfigured to construct higherdimensional lattices using a multiplicity of drive tones. Our results establish superconducting quantum circuits as a versatile platform for programmable Hamiltonians and extensible synthetic lattices with flexible single-photon control.

Optical neuromorphic computing offers advantages such as high speed, parallel processing, and strong interference resistance compared with conventional electronic computing methods. However, electrical signals cannot be used as inputs to optical neuromorphic computing frameworks. Optical neuromorphic computing faces a tremendous challenge in converting electrical signals into optical responses. In this paper, a pathway for the conversion based on artificial electrochromic synapses is proposed. The synapse, comprising manganese dioxide and tungsten oxide, exhibits tunable optical transmittance under varying second-level voltage pulses. Based on the transmittance responses, typical behaviors, such as short-term/long-term memory transition and paired-pulse facilitation, can be observed. Moreover, image recognition based on artificial electrochromic synapses can mimic an adaptation effect to accelerate recognition speed and enhance energy efficiency. The responses of recognition accuracy changes turn weak gradually through voltage stimuli after repetitive exposures. The results imply that integrating artificial electrochromic synapses with optical neuromorphic computing offers a new approach to realizing low-cost, fast, and efficient artificial intelligence systems.

Magnetic topological semimetals exhibit emerging magneto-transport behaviors, such as the giant anomalous Hall effect (AHE), chiral Hall effect, and antisymmetric magnetoresistance. In this work, based on the magnetic Weyl semimetal Co3Sn2S2, we report an intriguing longitudinal domain-wall Hall magnetoresistance in multi-domain states. According to a multi-domain model, a concise formula of this Hall magnetoresistance was revealed and verified experimentally. Rather than the real change of longitudinal resistance, this Hall magnetoresistance originates from an additional electric field distribution induced by the transverse giant AHE through the domain wall, which can be directly correlated to the Berry phase of topological Weyl bands. In Co3Sn2S2 devices, the Hall magnetoresistance was an order of magnitude larger than that of conventional magnetic materials, indicating its potential for multi-resistance-state modulation via the Weyl-enhanced AHE.

This paper targets the pricing and reliability of European barrier options under floating interest rate. First, given the difficulties faced by small and medium enterprises (SMEs) and individual investors in obtaining sufficient historical sample data for innovative financial derivatives, uncertainty theory provides a more feasible theoretical foundation for model construction under conditions of data scarcity. Secondly, the notion of first-hitting time is used to determine the activation conditions of the option. A novel fractional first-hitting time model with floating interest rate is constructed, which systematically integrates market risk induced by interest rate fluctuations and issuer credit risk. Subsequently, this model is applied to European barrier options, whereby we derive explicit pricing formulas and reliability indices for both knock-in and knock-out variants, respectively. Furthermore, to better gauge market expectations, we deduce the analytical expressions for the implied volatility of these barrier options. Finally, our research employs the uncertain fractional differential equation of Caputo-type to characterize the dynamics of carbon emission allowance prices and different kinds of European barrier options are formulated. Numerical analysis verifies the proposed model’s feasibility and the accuracy of the derived conclusions.

Signal processing often suffers from high energy consumption and limited speed due to the separation of data storage and computation in conventional electronic systems. To harness the full potential of spin-orbit torque (SOT) devices in real-time temporal signal processing, this paper proposes a SOT-based signal processing scheme. By exploiting the multistate resistance characteristics of SOT devices and their intrinsic alignment with convolution algorithms, we develop a synergistic framework for finite impulse response (FIR) filtering circuits. A multi-channel SOT convolution kernel circuit simulation model is further constructed, which exhibits outstanding performance in denoising tasks-ranging from simple sinusoidal signals to complex speech signals. Based on this model, we implement a hardware FIR filter using CoPt-SOT devices, with experimental measurements closely matching simulation results (sinusoidal signal: SNR = 18.84 dB; speech signal: SNR = 10.29 dB). Frequency-domain analysis further confirms that the filter preserves low-frequency information while suppressing high-frequency noise. This work not only advances the application of SOT devices in neural network hardware and real-time signal processing systems but also underscores their promise for next-generation high-efficiency computing architectures.

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials, but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose from Néel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

Spin–orbit torque (SOT) has been extensively investigated as the writing method for the next generation of magnetic random‐access memory (MRAM), owing to its high endurance and ultrafast switching dynamics. Throughout the development of SOT‐MRAM, enhancing the charge‐to‐spin conversion efficiency of spin source materials has been a central focus. MoTe 2 , a representative material in the family of layered transition metal dichalcogenides (TMDs), has demonstrated a substantial SOT efficiency along with unconventional spin currents. However, previous studies have been limited to mechanical exfoliation techniques, impeding its practical applications. Here, the manufacturable recipe of chemical vapor deposition (CVD) is developed to fabricate wafer‐scale MoTe 2 thin films. A large SOT efficiency of 0.24 is achieved in 14‐layer MoTe 2 . The potential presence of damping‐like torque is also demonstrated with Dresselhaus‐like symmetry, approximately one‐fifth as strong as that of conventional damping‐like SOT. This work paves the way for employing MoTe 2 for wafer‐scale spintronic device developments.

Fock-state lattices, composed of photon number states with infinite Hilbert space, have emerged as a promising platform for simulating high-dimensional physics due to their potential to extend into arbitrarily high dimensions. Here, we demonstrate the construction of multidimensional Fock-state lattices using superconducting quantum circuits. By controlling artificial gauge fields within their internal structures, we investigate flux-induced extreme localization dynamics, such as Aharonov-Bohm caging, extending from 2D to 3D. We also explore the coherent interference of quantum superposition states, achieving extreme localization within specific subspaces assisted by quantum entanglement. Our findings pave the way for manipulating the behavior of a broad class of quantum states in higher-dimensional systems.

The anomalous Hall angle (θA) is a measure of the efficiency of converting a longitudinal driving current into a transverse spin-polarized Hall current. In sensors based on the anomalous Hall effect, a large anomalous Hall angle can improve the sensitivity of magnetic field detection. However, the modulation of this angle is challenging, and magnetic materials typically have low angles of 0.1°–3°. Here we report the modulation of θA in the magnetic Weyl semimetal Co3Sn2S2. We show that the anomalous Hall angle parameter tanθA can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity. We use this scheme to demonstrate the modulation of tanθA up to a magnitude of 0.46, corresponding to an angle of around 25°. We further fabricate anomalous Hall devices using Fe-doped Co3Sn2S2 single-crystalline nanoflakes and demonstrate a Hall sensitivity of 7,028 ± 341 μΩ cm T–1 and a magnetic field detectability of 23.5 ± 1.7 nT Hz–0.5 at 1 Hz. The anomalous Hall angle parameter tanθA can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity, a scheme that allows the anomalous Hall angle in the magnetic Weyl semimetal Co3Sn2S2 to be increased to 25°.