Controllable synthesis of one-dimensional nanowires (NWs) is crucial for their large-scale applications, but it usually requires complicated catalyst designs with multiple compositions and careful tuning of synthesis parameters. In this study, we performed a systematic investigation into the impact of the shape of Au particles on the geometry and composition of the obtained NWs. We discovered that octahedral, dodecahedral, and cubic Au particles selectively catalyze the growth of Ga, GaAs, and Ga/GaAs heterojunction NWs, respectively. The mechanism stems from the difference in the solubility of Ga in Au catalysts with distinct shapes (i.e., curvatures) due to the Gibbs–Thomson (G–T) effect: Au octahedrons (7.42 nm), featuring smaller curvature radii, enhance the solubility of Ga precursors, enabling efficient diffusion and faster growth of Ga NWs; Au dodecahedrons (11.22 nm) with larger curvature radii exhibit moderate Ga solubility, favoring the growth of GaAs NWs; Au cubes (10.51 nm) with intermediate Ga solubility, yield Ga/GaAs heterojunction NWs. Finally, we fabricated NW field effect transistors (FETs) and revealed that the Ga NWs exhibited promising electrical characteristics with a resistivity of 2.54 × 10−4 Ω·m, and GaAs NWs showed p-type characteristics. All these results illustrate the promising potential for tuning the geometry and composition of NWs by a single parameter, i.e., merely changing the shape of a single Au particle.

Pixel miniaturization is crucial for advancing high-resolution short-wave infrared (SWIR) imaging, particularly for remote sensing, consumer electronics, and portable platforms. However, conventional epitaxial photodiode technologies have been limited to approximately 10 µm pixels, and systematic investigations of pixel miniaturization limits in SWIR detection are lacking. Here, we report the pixel scaling behavior of carbon nanotube (CNT) film heterojunction-gated field-effect transistor (HGFET) detectors and demonstrate the feasibility and performance improvement of subwavelength pixel SWIR detectors. Specifically, the main performance indicators of the HGFET detectors consistently improve, particularly the specific detectivity and response speed as the pixel is scaled from 5.5 to 1.0 µm. A HGFET detector with a subwavelength pitch of 0.65λ (∼1.0 µm) has a record specific detectivity exceeding 1015 cm·Hz1/2·W-1 at 1300 nm and rise/fall times of 132/148 µs. Through their compatibility with silicon-based readout circuits, submicron-pixel CNT HGFET arrays offer scalable and cost-effective platforms for next-generation high-resolution SWIR imaging systems.

This paper presents a quantitative study on the electrical properties of HgCdTe epitaxial materials with ultra-low background carrier concentrations, to support the development of fully depleted infrared structure. Conventional Hall measurements at 77 K reveals a distinct thickness-dependent carrier concentration in undoped mid-wavelength HgCdTe (Cd composition approximate to 0.29-0.32): the measured Hall concentration decreases from >1x10(14) cm(-3) to similar to 5x10(13) cm(-3) as the epilayer thickness increased from 5 mu m to 13 mu m. This phenomenon is attributed to surface states induced by oxidation and dangling bonds, which distort the standard single-layer Hall effect analysis and lead to inaccurate bulk parameter extraction. To decouple surface and bulk contributions, a double-layer Hall model is developed, where the effective Hall concentration neff is the combined response of a uniform bulk layer and a near-surface mixed layer. Assuming equal carrier mobilities in both layers, the model simplifies to n(eff) = n1 + n(surface)/d, predicting a linear correlation between n(eff) and 1/d. Differential Hall measurements with similar to 1 mu m stepwise etching precision are performed on four ultra-low-background HgCdTe samples, and the experimental results confirm this linear relationship, validating the model. The intrinsic bulk background concentrations extracted from fitted line intercepts ranges from 8x10(12) to 2x10(13) cm(-3), comparable to international state-of-the-art values (e.g., Teledyne). Slope variations among samples reflect surface microstate differences, associated with chemical etching, dislocation density, and compositional uniformity. The model is further verified by In-doped HgCdTe samples, with bulk concentrations derived from the model matching secondary ion mass spectrometry (SIMS) results within experimental error. Two-dimensional numerical simulations of mid-wavelength fully depleted HgCdTe devices show that a 5 mu m depletion width is achieved at reverse bias >0.1 V for 2x10(13) cm(-3) doping, and >0.5 V for 5x10(13) cm(-3). These results confirm that the HgCdTe materials, with reproducible ultra-low background concentrations, provide a material basis for fabricating HgCdTe fully depleted structures.

In-sensor optoelectronic computing offers a compelling route toward low-latency and energy-efficient machine vision, yet its expansion into the infrared spectrum remains fundamentally constrained by the absence of scalable and highly sensitive infrared kernel primitives (IKPs), which limits the application particularly under ultralow-light and complex conditions. Here we report highly efficient IKPs enabled by an ambipolar photoresponsive infrared photodetector consisting of an ambipolar field-effect transistor (AFET) and a heterojunction according to an optoelectrically decoupled architecture. Taking advantage of the symmetric ambipolar transport in Schottky-barrier (SB) carbon nanotube FET, the heterojunction-gated ambipolar FET (HGAFET) converts a directed photovoltage from the heterojunction gate into a positive photocurrent (PPC) or negative photocurrent (NPC) through adjusting the bottom gate voltage. The IKPs exhibit symmetric and sensitive ambipolar photoresponses, with both specific detectivities exceeding 10 13 Jones, to broad spectrum light from visible-to-shortwave infrared (vis-SWIR), and then have been demonstrated in-sensor multiply-accumulate operations and analog-domain interframe difference computations. The proposed in-sensor computing system based on these IKPs enables efficient feature recognition and motion awareness, achieving recognition accuracies above 90% under low-light conditions while reducing inference latency and computational cost by factors of 16.2× and 73.0×, respectively, and can act as a hardware-level strategy for all-weather infrared edge vision.

Sensitive photodetection covering UV, visible, and short-wave infrared (SWIR) lights will greatly promote applications in all-weather surveillance, remote sensing, and non-destructive inspection, but remains challenging in terms of bandwidth or dark noise based on either conventional semiconductors or emerging low-dimensional materials. Here, we take full advantage of the excellent designability and compatibility of the heterojunction-gated field-effect transistor (HGFET) phototransistor, and extend the SWIR detection upper limit from 1400 to 1700 nm through optimizing the lead sulfide (PbS) colloidal quantum dots (CQDs) based diode on the gate. Specifically, the mean diameter of CQDs is increased from 3.8 to 6.0 nm to enable efficient long-wavelength (1700 nm) absorption, and a hybrid ligand passivation strategy is used to significantly suppress defect states on the nonpolar (100) facets, thereby enhancing heterojunction photovoltage. The resulting HGFETs exhibit a broadband radiation detection from 350 to 1700 nm with a room-temperature detectivity of up to 5.7 × 1013 cm Hz1/2 W-1 and a minimum detectable power density of 6.4 nW cm-2 at 1650 nm. The hybrid-passivated CQD HGFETs provide a possible route toward next-generation, highly sensitive, and broadband infrared photodetectors from UV to short-wave infrared (beyond 1700 nm) light.

Heterojunction‐gated (HG) phototransistors have shown exceptional performance in weak‐light infrared detection due to their internal gain mechanism and the opto‐electric decoupling design. However, huge room is remained on optimizing device structure to further improve the performance, integrated density and yield. In this work, a carbon nanotube (CNT) film‐based phototransistor is fabricated with a self‐aligned gate consisting of a zinc oxide (ZnO) film/PbS colloidal quantum dot heterojunction. This fabrication process involves a standard lift‐off method to form an atomic‐layer‐deposited dielectric and a self‐aligned sputtered ZnO film, which fully covers the CNT network channel to provide the maximum light absorption area. The resulting device demonstrates a high responsivity of 2.9 × 10 5 A W −1 , a specific detectivity of 9.6 × 10 13 Jones, and an ultraweak detectable intensity of 0.8 nW cm −2 at 1300 nm illumination, all at room temperature. The self‐aligned HG phototransistor presents infrared photodetection performance comparable to non‐self‐aligned one, which typically require electron‐beam lithography or high‐precision lithography. This study can be insightful in developing high‐performance, easily manufacturable CNT‐based infrared detectors and high‐resolution imaging applications.

Mercury telluride (HgTe) nanocrystals (NCs) offer adjustable absorption and solution-processable fabrication, making them promising materials for low-cost, high-resolution imaging across a wide infrared (IR) spectrum. However, photodetectors based on HgTe NCs often suffer from high dark current, elevated noise arising from trap states and interface defects, and limited structural tunability, which constrain their sensitivity, dynamic range, and applicability in intelligent vision applications. Here, it is reported a dual-gate carbon nanotubes (CNTs) field-effect transistor incorporating an HgTe NC-based PIN heterojunction as the top gate, which converts incident IR light into a photovoltage that functions as a dynamic optical gate, while an independently addressable local bottom gate adjusts the carrier concentration in the CNT channel. This opto-electrically decoupled yet synergistic architecture enables high responsivity (>103 A/W), excellent room-temperature specific detectivity (1013 Jones) under low-power IR illumination, and a wide dynamic range of 170 dB to 1650 nm infrared irradiation when biased in the subthreshold region. Furthermore, by leveraging gate-controllable and self-adaptive photoresponse, it is demonstrated in-sensor convolutional processing and image fusion at the device level. This dual-gate architecture provides a new pathway toward high-performance IR photodetectors with in-sensor computing capabilities, advancing their potential for next-generation machine vision systems.

Different bilayer structures of HfO x /Ti（TiO x ） are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio（～104） and much uniform switching parameters are observed for bilayer structures compared to single layer HfO x sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO x -based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

Film cooling technology is of great significance to enhance the performance of aero-engines and extend service life. With the increasing requirements for film cooling efficiency, researchers and engineers have carried out a lot of work on the precision and digital measurement of cooling holes. Based on the above, this paper outlines the importance and principles of film cooling technology and reviews the evolution of cooling holes. Also, this paper details the traditional measurement methods of the cooling hole used in current engineering scenarios with their limitations and categorizes digital measurement methods into five main types, including probing measurement technology, optical measurement technology, infrared imaging technology, computer tomography (CT) scanning technology, and composite measurement technology. The five types of methods and integrated automated measurement platforms are also analyzed. Finally, through a generalize and analysis of cooling hole measurement methods, this paper points out technical challenges and future trends, providing a reference and guidance for forward researches.

Flexible scintillators with high light yield, spatial resolution and low light scattering are ideal for X-ray imaging application. However, conventional scintillators are always prepared by crystallization of functional layer, grinding and mixing with polymers, resulting in serious light scattering. Herein, an in situ fabrication strategy is proposed to prepare a low light scattering flexible scintillator film based on 0D antimony halide C38H36P2SbCl5 (MTP2SbCl5). The prepared scintillator film exhibits bright yellow emission with an outstanding photoluminescence quantum yield (PLQY) of 99.69%, and it demonstrates linear responsiveness to X-ray dose, achieving an impressive light yield of 39800 photons MeV-1 and a low detection limitation of 78.4 nGyair s-1. The scintillator film possesses strong radiation hardness and stability. In addition, low light scattering greatly inhibits optical crosstalk during X-ray detection, effectively improving the spatial resolution of MTP2SbCl5 film from 4.5 to 10.2 lp mm-1. On account of the simple preparation method and high performance, this work provides guidance for the preparation of high-efficiency, large-area, low-scattering and high-resolution flexible scintillator in the future.

Highly sensitive shortwave infrared (SWIR) detectors are essential for detecting weak radiation (typically below 10-8 W·Sr-1·cm-2·µm-1) with high-end passive image sensors. However, mainstream SWIR detection based on epitaxial photodiodes cannot effectively detect ultraweak infrared radiation due to the lack of inherent gain. Here, we develop a heterojunction-gated field-effect transistor (HGFET) consisting of a colloidal quantum dot (CQD)-based p-i-n heterojunction and a carbon nanotube (CNT) field-effect transistor, which achieves a high inherent gain based on an opto-electric decoupling mechanism for suppressing noise. The stacked heterojunction absorbs infrared radiation and separates electron-hole pairs. Then, the generated photovoltage tunes the drain current of the CNT FET through an Y2O3 gate insulator. As a result, the HGFET significantly detects and amplifies SWIR signals with a high inherent gain while minimally amplifying noise, leading to a recorded specific detectivity above 1014 Jones at 1300 nm and a recorded maximum gain-bandwidth product of 69.2 THz. Direct comparative testing indicates that the HGFET can detect weak infrared radiation at 0.46 nW cm-2 levels; thus, compared to commercial and reported SWIR detectors, this detector is much more sensitive and enables starlight detection or vision. As the fabrication process is very compatible with CMOS readout integrated circuits, the HGFET is a promising SWIR detector for realizing passive night vision imaging sensors with high resolutions that are high-end, highly sensitive, and inexpensive.

Diodes based on p-n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form p- or n-type semiconductors introduce impurities that lead to Coulomb scattering. When it comes to low-dimensional materials, controllable and stable doping is challenging due to the feature of atomic thickness. Here, by selectively depositing dielectric layers of Y2O3 and AlN, direct formation of wafer-scale carbon-nanotube (CNT) diodes are demonstrated with high yield and spatial controllability. It is found that the oxygen interstitials in Y2O3, and the oxygen vacancy together with Al-Al bond in AlN/Y2O3 electrostatically modulate the intrinsic CNTs channel, which leads to p- and n-type conductance, respectively. These CNTs diodes exhibit a high rectification ratio (>104) and gate-tunable rectification behavior. Based on these results, we demonstrate the applicability of the diodes in electrostatic discharge (ESD) protection and photodetection. [GRAPHICS]

PURPOSE:The objective of this study was to evaluate the feasibility of weight-based tube voltage and iodine delivery rate (IDR) for coronary artery CT angiography (CCTA). METHODS:A total of 193 patients (mean age: 58 ± 12 years) with suspected coronary heart disease indicated for CCTA between May and October 2022 were prospectively enrolled. The subjects were divided into five groups according to body weight: < 60 kg, 60 – 69 kg, 70 – 79 kg, 80 – 89 kg, and ≥ 90 kg. The tube voltage and IDR settings of each group were as follows: 70 kVp/0.8 gI/s, 80 kVp/1.0 gI/s, 80 kVp/1.1 gI/s, 100 kVp/1.5 gI/s, and 100 kVp/1.5 gI/s, respectively. Objective image quality data included the CT value and standard deviation (noise) of the aortic root (AR), the proximal left anterior descending branch (LAD), and the distal right coronary artery (RCA), as well as the signal-to-noise ratio and contrast-to-noise ratio of the LAD and RCA. Subjective image quality assessment was performed based on the 18-segment model. Contrast and radiation doses, as well as effective dose (ED), were recorded. All continuous variables were compared using either the one-way ANOVA or the Kruskal-Wallis rank sum test. RESULTS:No significant differences were observed in all objective and subjective parameters of image quality between the groups (P > 0.05). However, significant differences in contrast and radiation doses were observed (P < 0.05). The contrast doses across the weight groups were 27 mL, 35 mL, 38 mL, 53 mL, and 53 mL, respectively, while the ED were 1.567 (1.30, 2.197) mSv, 1.53 (1.373, 1.78) mSv, 2.113 (1.963, 2.256) mSv, 4.22 (3.771, 4.483) mSv, and 4.786 (4.339, 5.536) mSv, respectively. CONCLUSION:Weight-based tube voltage and IDR yielded consistently high image quality, and allowed for further reduction in contrast and radiation exposure during CCTA for coronary artery diseases.

Due to their internal gain mechanism, emerging nanomaterial-based infrared phototransistors show significant promise for highly sensitive detection; however, they usually suffer from high dark current (Idark) and thus high noise, which restricts the actual detection capability of the detector. Here, a semiconducting carbon nanotube (CNT) film-based phototransistor is proposed with an ultralow Idark and a high response through the adoption of stacked ZnO/PbS colloidal quantum dot heterojunctions as the photogate to absorb the infrared photons and generate a photovoltage. Solution-derived semiconducting CNTs with diameters ranging from 0.8 to 1.1 nm are utilized to create a network film that serves as the active channel of the transistor and provides an off-state current as low as approximate to 50 fA; this enables an ultralow dark current (pA level) in the infrared phototransistor. By tuning the back-gate bias, the synergistic modulation is demonstrated of the sensor response and electronic noise and achieve a high detectivity of 5.7 x 1013 Jones under an incident power density of 0.81 nW cm-2 and 1300 nm infrared radiation. These findings provide a promising approach for attaining weak light infrared detection based on nanomaterial-based photodetectors. This paper demonstrates a heterojunction-gated infrared phototransistor featuring a PIN photosensitizer as the absorbing module and small-diameter semiconducting carbon nanotubes as the conducting channels. These phototransistors exhibit a dark current at the pA level and a high detectivity of 5.7 x 1013 Jones at an incident power density of 0.81 nW cm-2 under 1300 nm radiation, highlighting their potential for future nanomaterial-based weak-light infrared detection. image

Carbon nanotubes (CNTs) are a type of nanomaterial that have excellent electrical properties such as high carrier mobility, high saturation velocity, and small inherent capacitance, showing great promise in radio frequency (RF) applications. Decades of development have been made mainly on cut-off frequency and amplification; however, frequency conversion for RF transceivers, such as CNT-based mixers, has been rarely reported. In this work, based on randomly oriented carbon nanotube films, we focused on exploring the frequency conversion capability of CNT-based RF mixers. CNT-based RF transistors were designed and fabricated with a gate length of 50 nm and gate width of 100 μm to obtain nearly 30 mA of total current and 34 mS of transconductance. The Champion RF transistor has demonstrated cut-off frequencies of 78 GHz and 60 GHz for fT and fmax, respectively. CNT-based mixers achieve high conversion gain from −11.4 dB to −17.5 dB at 10 to 15 GHz in the X and Ku bands. Additionally, linearity is achieved with an input third intercept (IIP3) of 18 dBm. It is worth noting that the results from this work have no matching technology or tuning instrument assistance, which lay the foundations for the application of Ku band transceivers integrated with CNT amplifiers.

Biological ion channels possess prominent ion transport performances attributed to their critical chemical groups across the continuous nanoscale filters. However, it is still a challenge to imitate these sophisticated performances in artificial nanoscale systems. Herein, this work develops the strategy to fabricate functionalized graphene nanopores in pioneer based on the synergistic regulation of the pore size and chemical properties of atomically thin confined structure through decoupling etching combined with in situ covalent modification. The modified graphene nanopores possess asymmetric ion transport behaviors and efficient monovalent metal ions sieving (K + /Li + selectivity ≈48.6). Meanwhile, it also allows preferential transport for cations, the resulting membranes exhibit a K + /Cl − selectivity of 76 and a H + /Cl − selectivity of 59.3. The synergistic effects of steric hindrance and electrostatic interactions imposing a higher energy barrier for Cl − or Li + across nanopores lead to ultra‐selective H + or K + transport. Further, the functionalized graphene nanopores generate a power density of 25.3 W m −2 and a conversion efficiency of 33.9%, showing potential application prospects in energy conversion. The theoretical studies quantitatively match well with the experimental results. The feasible preparation of functionalized graphene nanopores paves the way toward direct investigation on ion transport mechanism and advanced design in devices.

Negative photoconductance (NPC) detectors have attracted continuous attention for constructing advanced and novel optoelectronic devices, including reconfigurable image sensors and optosynaptic systems, especially by combining NPC with positive photoconductance (PPC). However, NPC devices suffer from much lower photosensitivity, slower response speed, and poor stability, especially in the infrared range. In this work, controllable NPC detectors based on organic‐gated carbon nanotube field‐effect transistors (OG‐CNT FETs) are reported and the strong influence of light‐induced electrostatic doping on the nonconventional photoresponse is demonstrated. The PM6/Y6‐based heterojunction allows efficient near‐infrared light absorption and facilitates exciton diffusion. By introducing a floating gate structure with an ultrathin dielectric layer, the OG‐CNT FET shows an enhanced NPC effect owing to in situ signal amplification. Compared to other device configurations, the optimal OG‐CNT FETs exhibit high responsivity of 72.6 A W −1 at 880 nm, along with improved response/recovery times of 7 and 5 ms. Impressively, gate‐tunable switching between NPC and PPC is observed under the same light illumination. The reversible switching can be attributed to the competition between the light‐controlled electrostatic coupling and the PM6/Y6 photovoltaic effect, which offers a new approach to achieve bidirectional photoresponses and paves the way for the development of future multifunctional optoelectronic systems.

Cu/HfOx/Pt and Cu/HfOx-ZnO/Pt resistance random access memory (RRAM) devices are prepared by magnetron sputtering. The results show that the Cu/HfOx/Pt device has the stable bipolar resistive switching characteristics, good retention (as long as 10(4) s), and a switching ratio greater than 10(3). The current conduction mechanism of HfOx device is ohmic conduction at low resistance, while space charge limited current (SCLC) mechanism dominates at high resistance, and the conductive filament is composed of oxygen vacancies. Owing to the low content and random distribution of oxygen defects in the HfOx film, the endurance and uniformity of the device are poor. Compared with HfOx device, HfOx-ZnO device exhibits lower operating voltage and better uniformity and stability. The main reason is that ZnO material has smaller formation energy of oxygen vacancy, which can produce more oxygen defects under electric field to participate in the resistive switching behavior of the device, thereby reducing the operating voltage and improving the uniformity of the device. In addition, owing to the existence of the interface between HfOx and ZnO film, the random distribution of oxygen defects is inhibited, that is, the random fracture and formation of conductive filament are inhibited, which is beneficial to improving the uniformity of the device. In addition, the resistive switching behaviors of Cu/HfOx/Pt and Cu/HfOx-ZnO/Pt RRAM devices under different intensities of 255 nm ultraviolet illumination are studied. For Cu/HfOx/Pt device, the light of 255 nm wavelength shows little effect on its resistive switching characteristics. For the Cu/HfOx-ZnO/Pt RRAM device, the operating voltage and stability of the device can be improved by increasing the light intensity. Although the switching ratio of the device decreases with the increase of light intensity, the device can exhibit multiple resistance states by adjusting different light intensities to achieve multi-level storage. Finally, the analysis of the I-V curves of the devices indicates that the two types of devices show similar resistive switching mechanisms under the illumination of light or no light, which can be explained by the resistive switching mechanism of oxygen vacancy conductive filament. Therefore, a physical model based on the oxygen vacancy conductive filament is established to explain the resistive switching behavior of the device in this paper

Photodetectors are the fundamental building blocks for many optoelectronic systems, including night vision, optical communications, biomedical imaging, security and motion detection. Carbon nanotubes (CNTs), which have a direct-bandgap structure, a broad spectral response and a large absorption coefficient, provide an ideal research platform for the exploration of high-performance infrared photodetectors. In the past twenty years, great efforts have been devoted to improve detection sensitivity via adopting high-purity CNT films, various doping strategies, optical manipulations and sensitizing nanostructures. Despite considerable strides made, challenges remain in simultaneously achieving high responsivity, low dark current and fast response. In this Review, we summarize recent advances on key device construction strategies and underlying concepts that contribute to improve performance of fabricated CNT photodetectors. The newly emerging heterojunction gated CNT transistors and their potential are highlighted to overcome trade-offs between the optical and electronic processes. Novel applications of CNT photodetectors are further summarized for advanced optoelectronic technologies.

Atomically thin 2D nanopores have emerged as promising platforms from nanofluidics research to practical applications. Low-frequency flicker noise in 2D nanopores limits detection accuracy and performance of nanopore sensors. However, the physical mechanisms of low-frequency noise are still under debate and achieving its control in 2D nanopores remains challenging. Here, we report multivalent-cations-modulated low-frequency noise in graphene nanopores and demonstrate that low-frequency noise originates from surface charge fluctuations induced by reversible adsorption-desorption of ions. Unexpectedly, its amplitude can be greatly controlled up to about 3 orders of magnitude by a trace of multivalent cations (at least 0.1% of concentration in mixture solutions). Moreover, low-frequency noise can be suppressed by 2 orders of magnitude via adding organic solvents with a high dielectric constant based on suppressing interactions between surface charge and ions. Our findings will facilitate understanding of low-frequency noise in nanofluidics and design of related applications including ultrasensitive nanofluidic devices.