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    IEEE SOLID-STATE CIRCUITS LETTERS

    IEEE SOLID-STATE CIRCUITS LETTERS

    JournalISSN 2573-9603eISSN 2573-9603中科院 工程技术 3区

    年发文量

    研究主题

    论文(794)

    排序
    1A Low-Noise Fast-Switching Transconductor for Sub-Sampling PLLs
    Abhishek Kumar,Nagendra Krishnapura

    Sub-sampling PLLs use a transconductor following the sampling phase detector. To reduce the loop-filter capacitor size, a small transconductance with polarity switching can drive a switched-capacitor loop filter; however, slow settling introduces uncertainty in the PLL parameters, and excess output noise directly contributes to PLL jitter. Realizing a small transconductance at low bias current results in slow switching, whereas large bias currents with current cancellation degrade noise performance. Additionally, the transconductor must maintain high output impedance and a sufficiently large control-voltage swing. The proposed feedforward gain-boosted cascode transconductor achieves 80 dB dc gain and less than 2 ns settling time, enabling a prototype 24.6–29 GHz SSPLL with a 50 MHz reference to achieve −97 to −100 dBc/Hz phase noise at 500 kHz, −118 to −120 dBc/Hz at 10 MHz, 236–246 fs rms jitter, 22.3–25.3 mW power consumption, a 266.4 dB FoMj,N, and a 0.136 mm2 area in 65 nm CMOS. The PLL loop parameters are accurately controlled, and the transconductor contributes only a small fraction of the total jitter. The proposed feedback loop architecture is applicable to other high-gain opamp systems operating with low bias currents.

    2026
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    2A 28nm Reconfigurable CAM for High-Utilization String Matching
    Zhiting Lin, Lixin Zheng, Yang Lou, Qiushi Feng, Baofa Wu, Jiajun Long, Xianluan Zhao, Mingyu Peng, Juntao Ge, Chenglong Duan,Yu Liu,Xin Li,

    Content-addressable memory (CAM) is essential for data-intensive applications such as network packet classification, but conventional row-by-row architectures store one fixed-width rule per row, so variable-length rules must be padded to the row width, limiting the average array utilization to 53.1% for a representative uniform 1–16-byte rule-length distribution. This letter proposes a reconfigurable CAM architecture that raises array utilization to near 100%. A reconfigurable segmented array (RSA) with match-line switching circuitry (MSC) stores variable-length rules consecutively at arbitrary starting positions without inter-rule padding, and an input cyclic self-alignment (ICS) mechanism keeps the packed table searchable without sorting or alignment, requiring at most 8 clock cycles for alignment to cover all starting offsets in a 64-row array. A cross-column two-level asynchronous search conditionally gates the evaluation of the rule suffix upon a prefix hit, reducing unnecessary match-line switching activity. Fabricated in 28-nm CMOS, the chip achieves 430 MHz operation, supports up to 128-bit search width, and achieves a minimum search energy of 0.72 fJ/bit.

    2026
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    3A Practical MRAM Logic-in-Memory Platform with Reference-Bitline Structure
    Seongmin Ahn, Minjun Jang, Mingu Han, Bayartulga Ishdorj, Siyeol Lee,Taehui Na

    The memory wall due to data movement is a major challenge that limits performance and energy efficiency in bitwise-operation-intensive applications. To address this issue, this paper proposes a global merged reference-based magnetic random-access memory (MRAM) logic-in-memory structure. The proposed structure generates operation-specific reference resistances by controlling the effective parallelism of the reference bitlines (Ref-BLs) while maintaining the initial reference-cell configuration, thereby supporting memory read and two-input AND/OR operations without rewriting the reference cells or using dedicated AND/OR logic blocks. A read-disturbance-free scheme is also applied to protect the frequently accessed reference cells. A 32-kb test chip fabricated in a 28-nm FD-SOI process achieved sensing yields of 100%, 98.63%, and 99.73% and normalized energies per bit of 0.97×, 0.54×, and 0.49× relative to conventional MRAM for memory read, OR, and AND operations, respectively. Full-system evaluations achieved speedups of 2.23×–2.50× and 3.14×–4.97×, with normalized dynamic energy consumption of 0.39×–0.44× and 0.23×–0.30×, for bitmap-index queries and bitmap-based breadth-first search, respectively.

    2026
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    4A CMOS LNA with an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications
    Yunfan Gao, Minghan Liu, Mengting Yan,Cristian Cassella, Miriam Leeser,Marvin Onabajo

    This letter presents a 2.8-GHz low-power CMOS low-noise amplifier (LNA) with an embedded self-mixing power detector (PD) for low-overhead RF power monitoring. The detector reuses two existing LNA node voltages as the signal and local oscillator (LO) inputs for direct down-conversion mixing, which avoids a dedicated LO generator, coupler, or standalone detector path. Implemented in a 65-nm CMOS process and operated from a 1-V supply, the prototype consumes a total of 400 μW, including 375 μW for the LNA and 25 μW for the PD. Measurements show an S21 of 14.5 dB, S11 of −12.9 dB, noise figure of 4.5 dB, IIP3 of −7.5 dBm, and input-referred 1-dB compression point (P1dB) of −17.5 dBm at 2.8 GHz. The embedded PD provides a monotonic output response over more than 20 dB input range while occupying only 0.012 mm2. The proposed architecture enables compact RF power sensing for adaptive low-power receivers, including interference-resilient front-ends with frequency-selective limiters.

    2026
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    5A 1.59 Pj/b 112-Gb/s PAM-4 and 1.06 Pj/b 168-Gb/s PAM-8 Resistor-Less 7-Bit SST DAC-Based Transmitter with 8-Tap FFE
    Yao-Hung Tsai, Ming-Han Chuang,Shen-Iuan Liu

    A resistor-less 7-bit source-series-termination (SST) DAC-based transmitter (TX) with an 8-tap feedforward equalizer (FFE) is presented. Three different resistor-less SST segments (SSTSs) are employed to achieve low capacitance, compact area, and scaling friendliness. To reduce the output jitter of 4:1 multiplexer due to the inter-symbol-interference (ISI), the dual-feedback equalizer (DFEQ) is proposed. This TX is fabricated in 28-nm CMOS and has a maximum output swing of 1.1 Vppd. For the 112-Gb/s PAM-4 and 168-Gb/s PAM-8 data, the calculated energy efficiency is 1.59 pJ/b and 1.06 pJ/b, respectively.

    2026
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    高被引作者

    作者引用发文
    Robert Bogdan Staszewski28718
    Patrick Mercier21411
    Rui Paulo Da Silva Martins1819
    Jae-Sun Seo1676
    Eugenio Cantatore1557
    Pieter Harpe1498
    Pui-In Mak (Elvis)1375
    Mingoo Seok1369
    Shihui Yin1363
    Kenichi Okada13416

    高产作者

    作者引用发文
    Robert Bogdan Staszewski28718
    Kenichi Okada13416
    Zhiliang Hong3713
    Jiawei Xu3312
    Atsushi Shirane9612
    Patrick Mercier21411
    David Blaauw8411
    Sining Pan4910
    Taekwang Jang7710
    Mingoo Seok1369

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