Vision processor is favorable for edge computing scenarios due to its advantages of high computing efficiency and low power consumption. It can operate various image processing algorithms on a single chip. This paper firstly overviews the progress of vision processor researches in decades. Then, the paper introduces a design of programmable parallel vision processor architecture, which can flexibly implement both computer vision algorithms and deep learning neural network algorithms. A vision processing enhanced RISC instruction set is designed to accelerate the execution of deep learning algorithms. Moreover, this paper introduces a set of algorithm optimization methods from an algorithm/hardware co-design perspective, and deploys algorithms on the vision processor efficiently.
Biomedical signals like Electrocardiogram (ECG), Electroencephalogram (EEG) and photoplethysmography (PPG) are recorded routinely to provide helpful information for early diagnosis of disease. A low power consumption is very important to allow long term ambulatory monitoring with battery powered systems. Direct digital conversion (DDC) technique has been proposed in recent years which emerges the preamplifier and data converters, reducing the complexity of readout chain and thus its power consumption. This paper provides a review on DDC for biopotential signals and bio-optical signals acquisition. The state-of-the-art DDC based readout architectures together with circuit implementations are provided.
This work presents a 0.8~18GHz wideband reconfigurable receiver front end design and simulation with Simulink. The wideband front end can support different bandwidth and operate in a broadband system simultaneously. Simulink has advantages in high level synthesis of receiver design due to the encapsulated blockers that take into account their main circuit limitation. The receiver front end integrates a low noise amplifier (LNA), mixer, tunable low pass filter, variable gain amplifier (VGA) and local oscillator (LO). The wideband receiver front end operated between 0.8~18GHz achieves tunable bandwidth of 500MHz and 1GHz, a total gain of 20dB, a sensitivity of -80dBm, a noise figure (NF) of 5.65dB, an IIP3 of -5.5dBm, and a 3th Chebyshev low pass approximation achieving >16dB attenuation at an offset of 100MHz for the 1GHz bandwidth setting.
Dual active layer (DAL) Mg-doped InZnO thin film transistors (TFTs) are fabricated with ultralow usage of the rare metal In. Optimized DAL MIZO TFTs are obtained by adjusting In-doping, Mg content, and the thickness of two active layers. Compared with conventional single active layer TFTs, the DAL MIZO TFTs showed improved performance in terms of carrier mobility, threshold voltage (Vth), ON-state current (ION), and leakage current (IOFF). The front channel near the gate oxide has a lower Mg-doping and a higher In-doping compared with that of back channel, providing a high carrier concentration (ne) to increase ION. The back channel has a higher Mg-doping and a lower In-doping, providing a low ne to suppress IOFF. Furthermore, the heterojunction potential barrier formed between the two channel layers also helps to suppress the IOFF of the DAL TFTs.
In this paper, single event burnout (SEB)effect is investigated for 700V Double-RESURF SOI LDMOS. SEB mechanism is revealed that parasitic bipolar turn-on and self-maintaining. In first stage, due to holes ionized by a heavy particle, voltage drop along p-well region is increased, giving rise to parasitic bipolar turn-on. In second stage, electrons from the bipolar induces Kirk effect, and cause new hole-electron pairs due to electric field enhanced. New ionized holes flow to P-well, and provide a supplement to base electrode current, which forms positive feedback and makes parasitic bipolar self-maintaining. Compared to single-RESURF structure, the double-RESURF structure has better immunity to SEB effect because of P-top layer. P-top layer provides a path to extract hole current in N-drift region, suppressing parasitic bipolar turn-on and self-maintaining. Experiment result shows that no SEB is observed for the double-RESURF LDMOS device at LET = 86.1MeV‧ mg/cm 2 .
