Demonstrated the influence of buffer layers of group IVB oxides on the electrophysical characteristics of ferroelectric memory storage elements with a hafnium oxide functional layer. Thin films of buffer and functional layers were deposited by plasma-enhanced atomic layer deposition using the Russian system “Izofaz TM-200K-01.” It was experimentally found that the introduction of thin-film buffer layers reduces the drop in the value of residual polarization after heating. Zirconium oxide buffer layers positively effect of the memory window of the storage element, and titanium oxide buffer layer allows reducing the influence of the imprint effect and increasing the value of the remnant polarization and switching endurance.

Atomic layer deposition (ALD) is widely utilized in the modern microelectronic industry due to its capability of depositing thin films with exceptional conformality and uniformity. The first Russian ALD system Izofaz TM 200-01 has already been successfully employed in the deposition of various materials, particularly high-k dielectrics such as aluminum oxide. This study presents the computer modeling-based investigation of the ALD process for hafnia and zirconia oxide films using the aforementioned ALD system. The growth per cycle was determined to be 1.1 Å/cycle, while the within-wafer nonuniformity was measured to be 1.2

Structural, mechanical, and electrophysical properties of rhombohedral hafnium oxide (r‐HfO 2 ) with space group R 3, as well as properties of HfO 2 , ZrO 2 , and Hf 0.5 Zr 0.5 O 2 with space group Pca 2 1 are studied using quantum chemical calculations. The characteristic diffraction peak of 2 θ r‐HfO 2 is close to the characteristic diffraction peaks of tetragonal (t‐HfO 2 ) and orthorhombic (f‐HfO 2 ) hafnium oxide. The value of bulk modulus is 231 GPa, which is larger than one of the orthorhombic structures. The values of high intensity peaks of Raman spectrum are 670 and 540 cm −1 . The bandgap width is 5.8 eV and the average value of dielectric constant is 35.34, which is higher than one of orthorhombic hafnium oxide.

The subtractive process of forming a metallization system for integrated circuits has been studied. Structures with aluminum and copper conductors with different pitches were used as models. The gaps between the conductors were filled using the chemical solution deposition technique. The formed organosilicate layers provided complete or partial planarization of the relief. Electrical measurements indicated a decrease in capacitance and leakage currents in structures with nanoporous dielectric layers.

В работе исследуется кинетика низкотемпературного радикального окисления кремния в потоке озона, сформированном в озонаторе (генераторе озона). Полученные данные подтверждают уникальные возможности процесса низкотемпературного окисления в озоне - возможность формирования тонкого оксида кремния толщиной 10…20 A при температуре 500 °С, что примерно на 150…200 градусов ниже, чем для существующего процесса ISSG окисления.

To improve the functionality of state-of-the-art integrated circuits, it is often necessary to create gate oxides of various thicknesses on a single chip. Currently, double oxidation is used for this purpose: a thick dielectric is created as a result of two oxidation processes, and a thin dielectric – only one. In this paper, the formation of dual gate oxide using pyrogenic oxidation and ISSG (in situ steamgeneration) is investigated. It is shown that ISSG oxidation during the creation of the 2nd oxide has a negligible effect on the thickness of the 1st thick oxide compared with pyrogenic oxidation, which is explained by the kinetics of radical oxidation of silicon.

The kinetics of single wafer radical oxidation of a silicon during a low-temperature (500…800 °C) in situ steam-generation (ISSG) oxidation process based on hydrogen combustion is investigated. To determine the constants of radical oxidation, the obtained dependences of the oxide thickness on time at different temperatures and fixed other parameters of the technological process were used. It is shown that the rate of low-temperature radical ISSG oxidation corresponds to the exponential growth law. The self-limitation of the oxide thickness observed at temperatures below 700 °C is of great practical importance for the formation of a thin dielectric with a thickness of less than 1 nm, since it allows to control the process of oxidation by temperature, and not by processing time as with standard thermal oxidation.

Рассмотрена объёмная диффузия по междоузельному механизму и по механизму вакансий примесного атома Cu в гранецентрированном кубическом нитриде титана. Рассчитаны из первых принципов в рамках теории функционала плотности по методу восходящих изображений значения энергетических барьеров миграции атомов меди на обеих подрешётках монокристаллического TiN и по междоузельным положениям, а также энергетические барьеры миграции вакансий в окрестности примесного атома Cu. Проведены оценки корреляционного множителя для диффузии по вакансионному механизму, получены зависимости изменения межатомных расстояний при миграции Cu, а также продемонстрировано изменение плотности электронных состояний при скачке примесного атома Cu на близлежащую вакансию титана.

The physical properties of rhombohedral hafnium dioxide in R3 structural modification, such as residual polarization, permittivity and its dependence on frequency, mechanical properties are determined.

Исследован субтрактивный процесс создания системы металлизации интегральных схем. В качестве модельных использованы структуры с алюминиевыми и медными проводниками, имеющие различный шаг. Заполнение зазоров между проводниками проводилось методом химического осаждения из раствора. Сформированные органосиликатные слои обеспечивали полную или частичную планаризацию рельефа. Электрические измерения свидетельствовали о снижении ёмкости и токов утечек в структурах с нанопористыми диэлектрическими слоями.

Исследована кинетика радикального окисления кремниевой пластины в системе индивидуальной обработки при проведении процесса низкотемпературного окисления (500…800 °С) с генерацией пара у поверхности пластины (in situ steam-generation – ISSG). Для определения констант радикального окисения использовались полученные зависимости толщины оксида от времени при различной температуре и фиксированных остальных параметрах технологического процесса. Показано, что скорость низкотемпературного радикального окисления соответствует экспоненциальному закону роста. Самоограничение толщины оксида, наблюдаемое при температуре ниже 700 °С, имеет большое практическое значение для формирования тонкого диэлектрика толщиной менее 1 нм, так как позволяет подбирать необходимую толщину оксида, изменяя температуру, а не время процесса.

This article studies various methods for the formation of dielectric diffusion barriers between open areas of copper and an organosilicate low- k dielectric in the subtractive method of forming a metallization system, in which metal lines are first formed, and then a low- k dielectric is deposited. Films of dense and porous organosilicate glass deposited by chemical deposition from solutions are used as a low- k dielectric. A comparison is made between AlN barrier layers formed by atomic layer deposition and SiCN barriers deposited by plasma-assisted chemical vapor deposition. The successful formation of a model structure of copper metallization using AlN barriers is demonstrated.

Modification of spin-on-deposited porous PMO(periodic mesoporous organosilica) ultralow-k(ULK) SiCOHfilms (k= 2.33) containing both methyl terminal and methylenebridging groups by vacuum ultraviolet (VUV) emission from Xeplasma is studied. The temporal evolution of chemical composition,internal defects, and morphological properties (pore structuretransformation) is studied by using Fourier transform infraredspectroscopy, in situ laser ellipsometry, spectroscopic ellipsometry,ellipsometric porosimetry (EP), positron-annihilation lifetimespectroscopy (PALS), and Doppler broadening positron-annihila-tion spectroscopy. Application of the different advanced diagnosticsallows making conclusions on the dynamics of the chemical composition and pore structure. The time frame of the VUV exposure inthe current investigation can be divided into two phases. During thefirst short phase,film loses almost all of its surface methyl andmatrix bridging groups. An increase of material porosity due to removal of methyl groups with simultaneous matrix shrinkage isfound by in situ ellipsometry. The removal of bridging bonds leads to an increase of matrix intrinsic porosity. Nevertheless, when thetreated material is exposed to the ambient air, the sizes of micro- and mesopores and pores interconnectivity decrease with the VUVexposure time according to PAS and EP data. The last is the result of the additionalfilm shrinkage caused by atmosphere exposure.During the second phase the increase of mesopore size is detected by both EP and PAS. The increase of mesopore size goes all thetime as it is expected from in situ ellipsometry, but it is masked by the air exposure.

Обзорная статья посвящена мемристорным структурам с пористыми материалами в качестве буферного слоя. Использование дополнительного пористого материала к основному переключающему слою позволяет уменьшить разброс рабочих параметров мемристора, увеличить количество циклов переключения и стабильность высокоомных и низкоомных состояний.

Neuromorphic computing has been raised as an excellent alternative to conventional digital computing due to scaling limits and heat removal difficulties. At the same time, neuromorphic computing makes special memory requirements, such as high-speed, durability, compatibility with CMOS technology. ReRAM meets these requirements perfectly. Therefore, the goal of this work is to better understand the physics of growth and rupture of metal-like filament in ReRAM.

In this work, the simulation of the processes of diffusion of metal barrier ions into a low-k dielectric between two nearby copper lines was performed. Based on experimental data on the diffusion coefficient published in the scientific literature and calculations according to the mathematical model of the distribution of metal barrier ions in the dielectric, the time dependent breakdown of a porous low-k dielectric in the elements of very large-scale integrated circuits of the modern topological level was estimated. Additionally, the work obtained dependences of the dielectric breakdown time on the distance between two nearby copper lines along with dependence on the power voltage of the line (the other line is grounded).

В данной работе представлены результаты осаждения тонких пленок оксида гафния с использованием отечественной установки «Изофаз Т. 200-01», разработанной НИИТМ. В качестве прекурсоров были использованы TEMAH (тетракис(этилметиламино)гафний(IV)) и плазма кислорода. Были получены тонкие пленки различной толщины (100-300 А) с отличной равномерностью по толщине и высокого качества.

Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).

In this work, model of remote plasma atomic layer deposition (RP-ALD) of hafnium oxide layers was considered. This model is based on Monte-Carlo method and takes into account the chemical kinetics of a process

Critical properties of porous periodic mesoporous silica (PMO) low-k dielectric with a different ratio of benzene bridges and methyl terminal groups are studied by using various advanced instrumentations such as Ellipsometric Porosimetry (EP), Surface Acoustic Wave Spectroscopy (SAWS), Specular X-ray reflectivity and others. It is shown that the pore size and surface roughness of the films decrease with an increase in the concentration of the benzene bridge, although at a concentration of benzene bridges >25 mol %, the pore size sharply decreases and changes little with a further increase in the concentration of bridges. The concentration of the benzene bridge also increases dielectric constant and improves the mechanical properties. The increase in Young's modulus with the benzene bridge concentration has percolation type behavior and sharply increases at a concentration of the benzene bridge close to 50 mol %. It has also been found that introducing 30 wt % porosity into benzene-bridged films without methyl terminal groups increases the Young's modulus. It is assumed that this unusual behavior is associated with the formation of crystal-like structure on the film framework. The increase of dielectric constant is associated with the higher polarizability of the benzene bridges in comparison with methyl terminal groups, as well as with their higher hydrophilicity and presence of adsorbed water.