Atomic layer deposition (ALD) is widely utilized in the modern microelectronic industry due to its capability of depositing thin films with exceptional conformality and uniformity. The first Russian ALD system Izofaz TM 200-01 has already been successfully employed in the deposition of various materials, particularly high-k dielectrics such as aluminum oxide. This study presents the computer modeling-based investigation of the ALD process for hafnia and zirconia oxide films using the aforementioned ALD system. The growth per cycle was determined to be 1.1 Å/cycle, while the within-wafer nonuniformity was measured to be 1.2

— This study is devoted to the analysis of various approaches to the problem of extracting the parameters of an empirical memristor model. A description of the features of the extraction process for the memristor mobility modification model is given, and an original version of the extraction algorithm based on the optimization of the Nelder-Mead algorithm with an objective function based on the calculation of the features of the studied current voltage characteristic (CVC) is proposed. The proposed algorithm is compared with two others: an objective function based on the symmetric difference between the areas of the model and experimentally obtained CVCs and with an objective function based on the MSE between the points of the considered CVCs. A comparison is carried out according to the criterion of a fixed budget using a specialized software tool. The proposed extraction algorithm is not less accurate than the other two, while offering the possibility of fine tuning.

Objectives. Over the past few decades, multiple knowledge management models have been developed by many research groups studying the innovation process in companies. However, these knowledge and information management models are rather general, and do not consider the dynamics and variability of technology development. This implies involving specific organizations in different types of knowledge generation activities. The paper aims to reveal the importance of a knowledge management system in micro- and nanoelectronics technologies as well as identify and systematize the sources of knowledge in the scientific and technical field.Methods. In this paper, the method for analyzing the relationship between key business indicators of the companies is applied. The results are then represented in a causal loop diagram. The stakeholder analysis method is also used here.Results. Three relevant trends in developing the knowledge management system for knowledge-intensive enterprises involved in micro- and nanoelectronics technologies are identified with respect to the social, commercial, and scientific and technical aspects in research organizations. The key sources of knowledge on micro- and nanoelectronics technologies include universities, institutions of the Russian Academy of Sciences, industry-specific institutions, customers, manufacturers, and consumers. Also, the authors consider digital twins to be a promising source of knowledge on micro- and nanoelectronics technologies.Conclusions. The analysis of the technology life cycle curve using the example of micro- and nanoelectronics allows correlating single stages of this life cycle with specific activities during which new knowledge is generated. These activities include fundamental and applied research, requirements management, implementation in manufacturing, and operation analysis. For microelectronics, they correspond to the areas of emergence, peak of inflated expectations, trough of disillusionment, slope of enlightenment, and plateau of productivity on the technology life cycle curve.

In this article, a study was made of the charge storage time in a memristor based on SiN. The distribution profile of traps in the band gap of SiN, their energy and concentration are determined.

В данной работе представлены результаты осаждения тонких пленок оксида гафния с использованием отечественной установки «Изофаз Т. 200-01», разработанной НИИТМ. В качестве прекурсоров были использованы TEMAH (тетракис(этилметиламино)гафний(IV)) и плазма кислорода. Были получены тонкие пленки различной толщины (100-300 А) с отличной равномерностью по толщине и высокого качества.

One of the key performance indicators of photonic circuits is the value of optical propagation losses. Among several factors which impact these losses, the sidewall roughness is considered as the primary focus of this work. The optical signal, propagating along the photonic device, scatters on roughness of its element's surfaces. This decreases the output power, as well as leads to the higher heating and worse transmission characteristics, which in its turn increases the noise ratio and creates undesired phase deviations. Thus, the problem of sidewall roughness simulation (and consequently, losses estimation in microwave photonic circuits caused by it) is relevant at the design stage of the devices. Therefore, a new, highly efficient model of sidewall roughness based on a photolithography simulation and imitational modelling of photoresist exposure is presented. Principles of operation and implementation features of the model are described. Simulation results, obtained using the new roughness model, are demonstrated and an approach on their verification with experimental data is suggested. Additionally, theoretical estimations for the optical losses caused by sidewall roughness in ridge Si waveguides are discussed.

В статье проведено исследование времени хранения заряда в мемристоре на основе SiN. Определены профиль распределения ловушек в запрещенной зоне SiN, их энергия и концентрация.

В докладе представлен исторический обзор мирового развития микроэлектроники, начиная с изобретения биполярного транзистора и до настоящего времени. Особое внимание уделено становлению российской полупроводниковой электроники и микроэлектроники, успешному освоению в СССР кремниевой технологии интегральных схем. Представлено текущее состояние дел в электронной промышленности России по развитию субмикронных технологий микроэлектроники в сравнении с мировыми лидерами по увеличению инвестиций на развитие производственной базы микроэлектроники и повышения конкурентоспособности страны, по реализации программ НИОКР. Представлен анализ современных тенденций развития микроэлектроники – «всепроникающих» вычислений, повышенной вычислительной мощности и малой потребляемой мощности, разработок в области искусственного интеллекта.

В настоящей работе представлена физическая модель мемристора Au / Ti / HfO2 / Au / Si на основе оксида гафния, описывающая перенос ионов кислорода, теплопередачу, а также протекание электрического тока через структуру.

В данной работе мы предлагаем еще один метод коррекции ошибок электрохимического гироскопа с помощью дополнительного электрохимического генератора, имеющего отклик на механический сигнал на удвоенной частоте. Метод коррекции ошибок основан на сравнении спектра сигнала с ЭХП и удвоенного спектра дополнительного генератора.

Данная работа посвящена разработке алгоритмов предсказания параметров модели мемристора по контуру его вольт-амперной характеристики с помощью машинного обучения. Приводится описание алгоритма поиска признаков контуров вольт-амперных характеристик, а также их взаимосвязей с параметрами модели мемристора, представленной в [1].

В центре внимания данной работы находится вопрос экстракции параметров компактных моделей мемристора. К рассмотрению предлагается разработанный программный пакет Visualizer, упрощающий анализ исследуемой модели и использование связанных с ней оптимизационных алгоритмов.

В работе приведены некоторые результаты атомно-слоевого осаждения тонких пленок оксида гафния на новой установке российского производства «Изофаз ТМ 200-01».

Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes the option of memristor models. The most common approach is the use of compact models, the accuracy of which is often determined by the accuracy of their parameter extraction from experiment results. In this paper, a review of existing extraction methods was performed and new parameter extraction algorithms for an adaptive compact model were proposed. The effectiveness of the developed methods was confirmed for the volt-ampere characteristic of a memristor with a vertical structure: TiN/HfxAl1−xOy/HfO2/TiN.

The selectivity of the reactive ion etching of functional materials included in the device structures of nanoelectronics with respect to the mask of a negative e-beam resist based on hydrogen-silsesquioxane (HSQ) is studied. The formation of nanostructures with sub-50-nm critical dimensions under the HSQ mask is studied for a number of materials: monocrystalline silicon, metallic Ta layers, dielectric SiO 2 layers, Al 2 O 3 , HfO 2 , Si 3 N 4 , and low-k porous dielectric based on organosilicate glass (OSG) on silicon substrates. It is established that HSQ resist masks can be used to manufacture prototypes of micro- and nanoelectronic devices with topological dimensions up to 10 nanometers using a wide range of materials, including creating structures with relatively high aspect ratios with an absolute thickness of the layers of functional materials of tens of nanometers.

В настоящей работе были исследованы два сканирующих электронных микроскопа на предмет наличия случайных и систематических ошибок и был предложен подход, основанный на изучении средних контуров элементов, для устранения данных ошибок.

В настоящей работе исследуются образование и разрыв проводящего слоя вакансий в структуре Hf/HfO/TiN. Работа охватывает теоретическое рассмотрение термических эффектов, возникающих в данной структуре в процессе RESET. Проведен анализ образования и разрыва филамента в аморфном слое HfO2. Также рассмотрено внедрение слоя Al2O3 в структуру Hf/HfO2/TiN.

Нитрид кремния, включая нестехиометрический SiN (x < 4/3), остается базовым материалом в наноэлектронике, что делает актуальным исследование мемристоров на его основе. Нами проведен обзор современных работ в этой области с акцентом на выявленные их авторами механизмы и модели проводимости; проведена систематизация в табличной форме. Кратко рассмотрены физические принципы, положенные в основу семи используемых разными авторами моделей, и сделан вывод о необходимости разработки синтетической модели, валидной на всех участках петли гистерезиса вольтамперной характеристики. По сравнению с мемристорами на основе оксидов переходных металлов такая синтетическая модель обязательно должна учитывать: 1) прыжки носителей заряда между ловушками; 2) процессы зарядки/перезарядки ловушек; 3) изменения локальных характеристик (подвижность, диэлектрическая проницаемость, температура) при электрополевом воздействии.

В данной работе рассматриваются существующие методы атомно-слоевого осаждения пленок кобальта, рутения и их оксидов для применения в различных целях в области микроэлектроники.

The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.