The rapid expansion of the Internet of Things (IoT) has fueled the demand for high-energy, compact microbatteries capable of powering energy-demanding IoT devices in small, flexible formats. Li-S batteries offer a promising solution but suffer from more intense polysulfide (LiPS) shuttling in the limited volume of microbatteries. Here, we achieved a high-energy quasi-solid-state Li-S microbattery by employing 3D-printed hierarchically structured sulfurized polyacrylonitrile (3D-HSPAN) cathodes with plasmonic enhancement. The direct ink writing technique produces shape-customizable 3D-HSPAN cathodes with precise architectural engineering, ultra-high mass loading up to 37.1 mg cm-2, and greatly improved ionic transport. Plasmonic MXene is harnessed to further boost LiPS-free redox conversion through synergistic photothermal effect and hot-carrier injection under near-infrared irradiation. Paired with a LiNO3 sustained-release carbonate-based gel polymer electrolyte, such quasi-solid-state Li-S microbatteries deliver high areal capacities over 18.1 mAh cm-2 and exceptional areal energy density reaching 30.7 mWh cm-2. Their versatility in flexible, transparent, and shape-customizable formats is demonstrated for wearable electronics and low-temperature operation. This work establishes a framework for uniting additive manufacturing, high-energy redox chemistry, and light-harvesting strategies to advance energy solutions.

Elucidating the structure–activity relationship between the electronic structure of catalytic active sites and oxygen evolution reaction (OER) activity at the orbital level is critical yet challenging in lithium–oxygen (Li–O2) batteries. Herein, employing frontier molecular orbital theory, we designed a Pt-based catalyst as a model cathode to investigate the influence of frontier orbital interactions between the Pt dz2 orbital and the 5σ orbital of LiO2 on the OER activity. Specifically, compared to the pure Pt catalyst, the dz2–dz2 orbital coupling between low-electronegativity Fe and Pt in PtFe catalyst induces predominant electron transfer from Fe to the dz2 frontier orbital of Pt. As the Pt content in PtFe alloys increases progressively (from Pt58Fe42, Pt67Fe33 to Pt76Fe24), the electron population of the Pt 5dz2 orbital gradually decreases (1.92 for Pt58Fe42, 1.85 for Pt67Fe33, and 1.80 for Pt76Fe24). This leads to a gradual enhancement in the strength of interactions between the Pt dz2 orbital and the frontier orbitals of LiO2, consequently resulting in a progressive decline in the OER catalytic activity. Establishing the correlating between the electron population in the dz2 frontier orbital and OER activity provides a descriptor for designing efficient electrocatalysts in Li–O2 batteries.

The development of aqueous zinc-iodine (Zn-I2) batteries is constrained by severe polyiodide shuttling, dendrite growth, and the hydrogen evolution reaction (HER). Herein, a TiO2-coated TiN nanowire array electrode is designed through the synergistic integration of facet engineering and heterointerface construction, enabling the simultaneous suppression of these issues. Facet engineering allows the concurrent exposure of the thermodynamically stable TiO2 (101) facets and the high-energy (001) facets. The (001) facets exhibit stronger interactions with water molecules than those of (101) facets, significantly increasing the energy barrier for HER and accelerating the desolvation of hydrated Zn2+ ions. Meanwhile, the 3D heterostructure establishes efficient electron/ion transport pathways, homogenizes the interfacial electric field, and mitigates surface polarization, thereby enabling uniform Zn deposition and effectively inhibiting dendrite growth at the anode. On the cathode side, the (001) facets can also enhance iodine species adsorption, while the heterointerfaces accelerate the catalytic conversion of polyiodides, effectively suppressing their dissolution and shuttling. As a result, the Zn-I2 battery delivers a reversible capacity of 92.1 mAh g-1 with nearly 100% Coulombic efficiency after 10 000 cycles at 50 C. The synergistic effects of facets and heterostructures offer a new strategy for high-performance aqueous Zn-based energy storage systems.

advancement of cryogenic electronics for space exploration and quantum computing is critically limited by the absence of reliable p-channel transistors, which often suffer from low on-off ratios and significant hysteresis at low temperatures. Here, we report highperformance, wafer-scale p-type tellurium oxide (TeOX) thin film transistors (TFTs) fabricated via e-beam evaporation and low-temperature annealing (< 150 degrees C). Through precise modulation of oxygen content, we achieve a high field-effect mobility of 30 cm 2 V(-1)s(-1) and a record-high on-off ratio of 10(10) at 10 K, with negligible hysteresis and high reliability. The exceptional performance is attributed to bandgap engineering via oxygen composition-which effectively suppresses the off-state current-and to enhanced crystallinity achieved through optimized annealing. This breakthrough underscores the potential of oxygen-modulated TeOx for energy-efficient and highly reliable CMOS integrated circuits in extreme cryogenic environments.

This paper proposes a novel pre-treatment method using La(iPr2-FMD)3 (La-FMD), the La2O3 precursor in combination with annealing to mitigate the dipole-induced flat-band voltage (VFB) modulation effect. Specifically, after performing 3 cycles of La-FMD treatment on the interfacial layer (IL), high-kappa dielectric post-deposition annealing (PDA) and post-metallization annealing (PMA) at various temperatures were conducted, achieving a positive VFB modulation of 390 mV. Furthermore, La-FMD treatment significantly improves the Si/SiO2 interface quality and reduces the equivalent oxide thickness (EOT), while no degradation in EOT and interface state density (Dit) is observed after PMA at 400 degrees C-500 degrees C. In contrast, PDA and PMA at other temperatures lead to increased EOT and deteriorated Dit. Notably, EOT is reduced by approximately 1.3 & Aring; after La-FMD treatment compared to untreated samples, while the oxide trap density (Not) is reduced by 51.2%, and the interface state density (Dit) is reduced by 45.1%. The results demonstrate that the synergistic effect of La-FMD treatment and PMA annealing enables EOT scaling and interface quality improvement, while offering tunable flat-band voltage control through different annealing temperatures. This finding provides a new approach for precise flat-band voltage modulation in advanced nanosheet gate-all-around field-effect transistors (NS GAA-FETs). Post-metallization annealing achieves a positive VFB shift of up to 390 mV for threshold voltage modulation.La-FMD treatment enables equivalent oxide thickness (EOT) scaling of approximately 1.3 & Aring; without increasing physical thickness.Interface quality is improved, with interface state density (Dit) reduced by 51.2% and oxide trap density (Not) reduced by 45.8%.Annealing-induced La redistribution forms HfLaOx, weakening dipole strength and enabling tunable VFB control.

Chiral materials exhibit unique optoelectronic properties due to their non-centrosymmetric structure. However, the influence of chiral configurations on halide vacancy repair and phase stability remains poorly understood, hindering the development of effective chiral passivation strategies for all-inorganic perovskite solar cells. In this work, we rationally constructed chirality-mediated interfaces between the perovskite and hole transport layer using R-/S-N-(9-fluorenylmethoxycarbonyl)-allylglycine (RAC-NFA) to simultaneously suppress defect-mediated non-radiative recombination and phase instability in CsPbI 3-x Br x solar cells. Theoretical and experimental analyses reveal that RAC-NFA operates via a “stereoselective complementarity” mechanism, which not only inhibits halide vacancy formation through “lock-and-key” coordination but also drives thermodynamically favorable secondary crystal growth and surface reconstruction, leading to larger, high-quality grains. Additionally, the densely packed aromatic Fmoc groups at grain boundaries effectively suppress phase transition and moisture/oxygen penetration. RAC-NFA modification further optimizes band alignment to enhance hole extraction and transport. Through these synergistic effects, the CsPbI 3-x Br x device achieves a power conversion efficiency of 22.19%, among the highest reported for such materials, while retaining over 90% of its initial efficiency after 800 h in ambient air. This work presents a synergistic passivation strategy that concurrently improves efficiency and stability, offering a promising route toward the commercialization of perovskite photovoltaics.

Germanium-based halide perovskites (GHPs) are promising nontoxic alternatives to their lead-based counterparts, yet their charge transport properties remain poorly understood. Probing the intrinsic mobility of these materials has been challenging due to the lack of single-crystal devices. Here, we report the fabrication of single-crystal field-effect transistors from a 2D Ruddlesden-Popper GHP, (PEA)2GeI4. Temperature-dependent measurements reveal that its intrinsic charge transport is thermally activated (∂μ/∂T > 0), a hallmark of small polaron hopping, which stands in stark contrast to the band-like transport (∂μ/∂T < 0) of its tin-based analogue ((PEA)2SnI4). We provide direct spectroscopic evidence that this behavior is driven by exceptionally strong electron-phonon coupling in the GHP lattice. Critically, we validate this by demonstrating that rational cation engineering to suppress this coupling switches the transport mechanism back to the more efficient band-like regime, enhancing mobility by over an order of magnitude. This work not only identifies small polaron formation as the primary performance limit in GHPs but also demonstrates a clear strategy to overcome it, contributing to the rational design of high-performance, nontoxic perovskite optoelectronics.

Fibrous energy-storage systems serve as a core component in the next-generation flexible and wearable electronics, yet their practical application is hindered by the limited temperature resilience of aqueous electrolytes and the mechanically fragile electrolyte-electrode interfaces. Herein, we design an in situ deep-eutectic hydrogel electrolyte based on a hydroxyl-rich glycerol-ethylene glycol-H2O system, in which the hydrogen-bond network is engineered to modulate the chemical potential of water and the free-energy landscape governing phase transitions. Strong H2O-H2O H-bonds are converted into a more uniformly distributed weak H-bond network in the electrolyte, thereby reducing the thermodynamic driving force for ice formation at low temperatures while suppressing H2O volatilization at elevated temperatures. Meanwhile, in situ photopolymerization enables the direct formation of a conformal hydrogel layer on the electrode surface, improving interfacial adhesion and mitigating parasitic reactions such as hydrogen evolution and Zn corrosion. Benefiting from the coupled thermodynamic and interfacial regulation, Zn||PANI coin cell exhibits stable operation over an ultrawide temperature range of -50°C-100°C and delivers a cycling life exceeding 10 000 cycles with 86.71% capacity retention at 25°C. A fibrous Zn||PANI cell further maintains reliable cycling for over 500 cycles at -25°C, demonstrating the applicability of this strategy for temperature-resilient wearable energy-storage systems.

Protonic ceramic fuel cells (PCFCs) offer considerable potential for clean and efficient energy conversion at intermediate temperatures. However, their application is constrained by the trade-off between insufficient electrode activity and limited operational durability. Here, we develop a Zn/Yb B-site codoping strategy combined with temperature-induced nanoparticle exsolution to construct a triple-conducting cathode. This approach introduces cation-driven charge modulation that enhances ionic diffusion and electronic conduction, while the exsolved secondary BaCoO3u2212u03B4 phase plays a pivotal role in increasing the density of active sites, optimizing interfacial charge transfer, and synergistically promoting oxygen reduction reaction (ORR) kinetics. Zn/Yb codoping redistributes the local charge density, weakens metalu2013oxygen bonds, and reduces the energy required for oxygen vacancy formation, promoting oxygen vacancy generation. The increased oxygen vacancy concentration facilitates surface oxygen activation and lattice hydration, enhancing oxygenu2013ion and proton transport. Meanwhile, enhanced du2013p orbital hybridization improves the electronic conductivity and accelerates charge transfer kinetics. In addition, the optimized alkalineu2013earth sites suppress carbonate formation, thereby imparting excellent CO2 tolerance. As a result, the optimized cathode delivers a peak power density of 0.99 Wu00B7cmu22122 at 600 u00B0C and stable operation over 100 h, with a polarization resistance of 0.110 u03A9u00B7cm2 under 20% H2O-air. This work provides a novel strategy for the optimization of activity, conductivity, and stability in PCFC cathodes.

ABSTRACT Metal halide perovskites (MHPs) offer a revolutionary pathway for next‐generation field‐effect transistors (FETs) because of their exceptional carrier mobilities and cost‐effective processability. However, their transition to practical electronics is significantly challenged by intrinsic instability and imbalanced charge transport. This review systematically examines the evolution of MHP FETs, establishing the fundamental structural–electrical–processing relationships across 3D, 2D (Ruddlesden–Popper and Dion–Jacobson), and quasi‐2D frameworks. We analyze the central dichotomy in the field: N‐type Pb‐based FETs are primarily hindered by intrinsic ion migration and gate‐screening effects, whereas P‐type Sn‐based FETs face a critical stability–mobility trade‐off due to the spontaneous oxidation of Sn 2+ . Furthermore, we detail the core optimization strategies—ranging from compositional engineering to interface modification—that have propelled carrier mobilities toward 100 cm 2 V −1 s −1 . By synthesizing these advancements, this review provides a strategic roadmap for overcoming current bottlenecks, offering essential insights for the design of future high‐speed, bio‐inspired perovskite electronics, and their integration into commercial optoelectronic systems.

Non-dispersive infrared gas sensors, renowned for their high selectivity and high reliability, are extensively employed in applications of smart agriculture. In particular, a stable and high-emission infrared source component plays a critical role in the proper functioning of non-dispersive infrared systems. However, current infrared sources usually have shortcomings in poor temperature homogeneity within the active area and low-power consumption. Here, we demonstrate a wafer scale, in situ integrated infrared source combined with an Al@NF-based radiation layer, achieving a high emissivity of 0.8 at 4.26 mu m. Through iterative optimization of the microheater pattern, the temperature homogeneity reaches an impressive 90%. In the integrated Al@NF-infrared source sensing system, the power density is reduced from 386.8 to 256.7 mW/mm2; meanwhile, its operational efficiency is increased eighteenfold, from 0.39% to 7.24%. The developed device enables precise tracking of greenhouse gas concentrations under controlled greenhouse conditions. The findings pave the way for low-power non-dispersive infrared systems and provide a new hardware model for smart agriculture.

Based on gas discharge theory incorporating enhanced distorted electric fields, refines the delay calculation formula for three-electrode spark-gap switches, thereby improving the accuracy of theoretical predictions. Additionally, the relationships between the delay and jitter of the spark-gap switch and variations in trigger voltage, operating voltage, gas pressure, and main electrode spacing were comprehensively examined. From the perspective of microscopic particles, the physical mechanisms by which these factors influence breakdown delay and discharge jitter were elucidated. By comparing the magnitude of each factor’s impact, the most critical factors affecting the breakdown delay and jitter of the spark-gap switch under conditions using a TEA CO2 laser as a load were identified, and discharge jitter was further reduced. Experimental results indicate that the rise rates of operating voltage and trigger voltage are the key parameters affecting the delay and jitter of the spark-gap switch, while the influence of other factors is relatively minor. Furthermore, the corrected delay calculation formula aligns well with the experimental results. This research not only provides a reference for delay prediction but also offers a low-jitter solution for laser oscillator-amplifier systems based on synchronized pulse discharge.

This work firstly implemented the Monolithic Integration of ultra-high density 1 Mb 8-layer 3D Vertical RRAM based Computing-In-Memory chip (MI-3DCIM) for efficient scientific computing. The 3D VRRAM performs in-situ matrix-vector multiplication (MVM) and transmits data to underlying computational circuits via the BEOL metal interconnects, which is embedded with the on-chip processor, enabling a fully monolithic SoC. Benefiting from the reduced latency and energy consumption, the MI-3DCIM exhibits ultra-high computational density ($204.8 \text{GOPS} / \text{mm}^{2}$), high energy efficiency (10.4 TOPS/W) and superior Figure of Merit ($2.13 \times 10^{6} \text{GOPS}^{2} / \mathrm{W} / \text{mm}^{2}$). This novel 3DCIM chip greatly enhances the capability for complex tasks.

Silicon's potential as a lithium-ion battery (LIB) anode is limited by extensive volume expansion, low intrinsic electrical conductivity, and high interfacial reactivity of lithium silicide (LixSi). Herein, we present a novel molten-assisted etching strategy that enables the construction of a potentially porous silicon framework with a spatially controlled gradient boron distribution. By utilizing molten boron oxide (B2O3) as both an etchant and a boron source, a one-step high-temperature reaction simultaneously induces pore formation and generates an in situ boron-rich silicide (SiBx) passivation layer on the silicon surface. Meanwhile, boron atoms diffuse inward along a concentration gradient, generating a boron-doped porous silicon. Subsequent carbon coating further drives boron incorporation into the carbon layer, thereby enhancing the overall conductivity. This multiscale architecture design effectively mitigates lithiation-induced mechanical stress and promotes the formation of a thin and robust solid electrolyte interphase (SEI) through a synergistic dual-passivation effect from both the carbon and SiBx layers. As a result, the optimized electrode delivers a high reversible capacity of 1617.5 mAh g-1 at 4 A g-1, excellent cycling stability with 80 % capacity retention after 800 cycles, and an impressive average Coulombic efficiency of 99.91 %. Moreover, this concurrent etching-doping strategy presents a cost-effective and scalable pathway for the development of advanced silicon-based anodes, contributing to the advancement of next-generation high-energy lithium-ion batteries.

Solid‐state lithium batteries have attracted significant interest due to their potential to enhance the safety and energy density of modern energy storage systems. However, challenges such as low ionic conductivity and poor interfacial compatibility have hindered their widespread adoption. In this study, a novel hydrogen‐bonded organic framework (HOF) composite polymer electrolyte (HCPG@SPE) is developed by integrating trimesic acid and melamine‐based HOFs with a natural polymer matrix composed of gelatin and chitosan. The hydrogen‐bonding interactions between the matrix and HOF in HCPG@SPE impart remarkable mechanical strength and thermal stability. Additionally, due to the weak interactions between HOF and lithium‐ions, and its anion adsorption capacity, HCPG@SPE effectively generates more free lithium‐ions, facilitating their migration while inhibiting anion movement. Electrochemical tests revealed that HCPG@SPE exhibited high ionic conductivity (5.74 × 10⁻ 3 S cm⁻¹ at 30 °C), a favorable lithium‐ion transference number (0.71), and an extended electrochemical stability window (5.4 V). Additionally, lithium metal batteries utilizing this electrolyte achieved outstanding performance, with LFP| HCPG@SPE| Li cells retaining 98% capacity after 1000 cycles at 5 C, and NCM811| HCPG@SPE| Li cells demonstrating stable cycling for 700 cycles at 1 C. The results suggest that the HOF‐based composite electrolyte holds significant promise for next‐generation high‐performance solid‐state lithium batteries.

A nanofiber necklace with a box-shaped structure has been designed. The box-shaped template can introduce other transition metal compounds, effectively compensating for the intrinsic defects of electrode materials. alpha-Fe2O3 nano cubes as the template mix with PAN to get alpha-Fe2O3/PAN. And then the alpha-Fe2O3 nano cubes calcine to form Fe3O4 with more valence state under high temperature, which get the box-shape necklace-like structure Fe3O4-CNFs. The confined space has formed by high concentrated HCl etching, the box-shaped necklace-like Fe3O4/MoS2 carbon nanofibers (BN Fe3O4/MoS2-CNFs) anode material is obtained by hydrothermal method of confining growth of MoS2 nanosheets. The mixed valence state of Fe3O4 (Fe3+/Fe2+) can effectively improve the conductivity of MoS2 nanosheets. The box-shape necklace structure constructed by alpha-Fe2O3 nanocube has mesoporous structure and confined space, which can alleviate the volume effect of electrode material. When the electrode material is applied to the SIBs, the reversible capacity is 354 mA h g-1 after 500 cycles at 0.5 A/g, and the specific capacity of 131.5 mA h g-1 can be maintained at 8 A/g. On the one hand, the heterogeneous structure in the confined space alleviates the volume effect of the material, thereby improving the long cycle performance, on the other hand, it effectively enhances the electrical conductivity and increases more lithium/ sodium storage sites.

Nowadays, low ionic conductivity, narrow electrochemical window of solid polymer electrolytes (SPEs) and the uneven deposition of Li + at the interface restrict the practical application of the assembled solid lithium metal batteries for fast charging-discharging(>5C). To address this issue, a new in-situ composite strategy is developed by constructing of B-containing COF and a modified lithium alginate electrospinning membrane. Beneficial from the synergy of the strong polar groups in the polymer chains and the B atoms in the COF backbone to promote the dissociation of lithium salts, the SPE exhibits high room-temperature ionic conductivity (0.879 mS cm(-1)) and Li+ transference number (0.51). Through the interactions between the polymers and COF, the electrolyte achieves high strength (1.07GPa) and wide electrochemical window (5.39 V). More importantly, combining the suppleness of the SPE and the strong lithophilicity of COF realizes the controlled deposition of Li+, the improved interface stability of devices is proved by Cryo-TEM and TOF-SIMS. As a result, the assembled Li/Li cells exhibit 10500 h stable cycling under 50 mA cm(-2), far better than currently reported work. Meanwhile, the assembled NCM811/Li solid cells realize excellent performance at 10C. Our research provides a strong impetus for the practical implementation of solid-state lithium batteries with high-voltage cathode.

Tin-based perovskites, renowned for their eco-friendliness, intrinsic high hole mobility, and low effective mass, hold great potential for p-type thin-film transistors (TFTs). However, their propensity for rapid crystallization and oxidation severely limits stability and carrier mobility. Here, we strategically enhance perovskite TFT performance by incorporating 2-thiopheneethylamine thiocyanate (TEASCN) into 3D tin-based perovskites. The induction of the pseudo-halide SCN − into a bilayer quasi-2D perovskite intermediate phase, combined with the strong interaction between sulfur-bearing thiophene rings (TEA + ) and Sn-I octahedra, effectively reorients perovskite crystallization while inhibiting Sn 2+ oxidation and reducing trap density. Consequently, TEASCN-based TFTs achieve an average hole mobility of more than 60 square centimeters per volt per second and an on/off current ratio surpassing 10 8 , standing out among state-of-the-art p-type perovskite TFTs. Furthermore, unencapsulated devices preserve 84% of their initial mobility after 30 days in an N 2 atmosphere, underscoring their remarkable stability. This work opens a straightforward path toward high-mobility and highly stable tin-based perovskite transistors.