Here we present a highly scalable reconfigurable field effect transistor concept, which is capable of dynamically switching between p-type, n-type, and ambipolar operation modes by adaptively changing the applied back-bias. The devices are processed on full-scale 300 mm wafers and reach gate lengths down to 20 nm, integrable into a 22 nm FDSOI platform with only minor process modifications. We demonstrate symmetric IV characteristics of p- and n-program with $I_{ON}/I_{OFF}$ ratio up to 103 at a $V_{DD}$ of 0.8 V, and propose an exploitation in hardware security. In ambipolar mode, frequency multiplication requiring only a single transistor is experimentally demonstrated.

Here we present a highly scalable reconfigurable field effect transistor concept, which is capable of dynamically switching between p-type, n-type, and ambipolar operation modes by adaptively changing the applied back-bias. The devices are processed on full-scale 300 mm wafers and reach gate lengths down to 20 mn, integrable into a 22 nm FDSOI platform with only minor process.modifications. We demonstrate symmetric IV characteristics of p-and n-program with I-ON/I-OFF ratio up to 10(3) at a V(DD )of 0.8 V, and propose an exploitation in hardware security. hi ambipolar mode, frequency multiplication requiring only a single transistor is experimentally demonstrated.

For Ni silicidation a lamp based anneal, a furnace anneal and a heater based anneal have been used. Ni silicidation on unstructured Si wafers is characterized by means of sheet resistance, XRD and AES. In the second part of this paper the characterization is extended to product wafers using sheet resistance measurements, transistor performance and product yield to investigate the suitability of the different techniques and processes. We will show that all of the above techniques are suitable for NiSi formation if the thermal budget of the 1st anneal step is sufficient to react enough Ni to Ni rich silicide phases or NiSi. A 2nd anneal step after sequential Ni strip has been found to be of minor importance as the backend processing will finish the NiSi formation in case of Nickel rich phases being left after the Ni 1st anneal step. In the direct comparison of NiSi vs. CoSi the former showed equivalent or better yield and performance.